Mn-doped amorphous Si:H films with anomalous Hall effect up to 150 K

2009 ◽  
Vol 94 (7) ◽  
pp. 072507 ◽  
Author(s):  
Jia-Hsien Yao ◽  
Shin-Chih Li ◽  
Ming-Der Lan ◽  
Tsung-Shune Chin
Keyword(s):  
Hall Effect ◽  
Anomalous Hall Effect ◽  
Mn Doped

Anomalous Hall Effect and Magnetoresistance in Mn-Doped ZnSnAs2Epitaxial Film on InP Substrates

2011 ◽  
Vol 50 ◽  
pp. 01BE12 ◽  
Author(s):  
Hiroto Oomae ◽  
Joel T. Asubar ◽  
Yoshio Jinbo ◽  
Naotaka Uchitomi
Keyword(s):  
Hall Effect ◽  
Anomalous Hall Effect ◽  
Inp Substrates ◽  
Mn Doped

Anomalous Hall Effect in 2D DMS

2015 ◽  
Vol 233-234 ◽  
pp. 109-112 ◽  
Author(s):  
Leonid N. Oveshnikov ◽  
V.A. Kulbachinskii ◽  
Alexander B. Davydov ◽  
Boris A. Aronzon
Keyword(s):  
Quantum Wells ◽  
Hall Effect ◽  
Anomalous Hall Effect ◽  
Free Carrier ◽  
Temperature Decrease ◽  
Percolation Transition ◽  
Sign Change ◽  
Intrinsic Mechanism ◽  
Spin Dependent Scattering ◽  
Mn Doped

Transport and magnetic properties of δ-Mn doped GaAs/InGaAs/GaAs quantum wells (QW) with various In content were studied at temperatures 4.2K≤T≤300K. Fluctuation potential (FP) appeared to be crucial for transport characteristics of structures under investigation. The magnetic percolation transition was observed at temperatureTpin the range 20 - 40K. TheTpdependence on the In content is nonmonotonic due to the peculiarities of free-carrier mediated exchange interaction mechanisms. The change of the anomalous Hall effect (AHE) sign with decreasing temperature was detected at temperatures close to theTp. The main reason of the AHE sign change is the variation of contributions of different AHE mechanisms (intrinsic and side-jump) caused by the reduction of spin-dependent scattering intensity with temperature decrease. We believe that our results are the experimental observation of the AHE intrinsic mechanism in 2D.

Anomalous Hall effect in highly Mn-Doped silicon films

JETP Letters ◽  
2009 ◽  
Vol 89 (12) ◽  
pp. 603-608 ◽  
Author(s):  
S. N. Nikolaev ◽  
B. A. Aronzon ◽  
V. V. Ryl’kov ◽  
V. V. Tugushev ◽  
E. S. Demidov ◽  
...  
Keyword(s):  
Hall Effect ◽  
Anomalous Hall Effect ◽  
Silicon Films ◽  
Doped Silicon ◽  
Mn Doped

Anomalous Hall Effect and Magnetoresistance in Mn-Doped ZnSnAs2Epitaxial Film on InP Substrates

2011 ◽  
Vol 50 (1S2) ◽  
pp. 01BE12 ◽  
Author(s):  
Hiroto Oomae ◽  
Joel T. Asubar ◽  
Yoshio Jinbo ◽  
Naotaka Uchitomi
Keyword(s):  
Hall Effect ◽  
Anomalous Hall Effect ◽  
Inp Substrates ◽  
Mn Doped

scholarly journals Interface-induced sign reversal of the anomalous Hall effect in magnetic topological insulator heterostructures

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Fei Wang ◽  
Xuepeng Wang ◽  
Yi-Fan Zhao ◽  
Di Xiao ◽  
Ling-Jie Zhou ◽  
...  
Keyword(s):  
Hall Effect ◽  
Electric Fields ◽  
First Principles ◽  
Berry Phase ◽  
Condensed Matter ◽  
Anomalous Hall Effect ◽  
First Principles Calculations ◽  
Sign Reversal ◽  
Berry Curvature ◽  
Topological Materials

AbstractThe Berry phase picture provides important insights into the electronic properties of condensed matter systems. The intrinsic anomalous Hall (AH) effect can be understood as the consequence of non-zero Berry curvature in momentum space. Here, we fabricate TI/magnetic TI heterostructures and find that the sign of the AH effect in the magnetic TI layer can be changed from being positive to negative with increasing the thickness of the top TI layer. Our first-principles calculations show that the built-in electric fields at the TI/magnetic TI interface influence the band structure of the magnetic TI layer, and thus lead to a reconstruction of the Berry curvature in the heterostructure samples. Based on the interface-induced AH effect with a negative sign in TI/V-doped TI bilayer structures, we create an artificial “topological Hall effect”-like feature in the Hall trace of the V-doped TI/TI/Cr-doped TI sandwich heterostructures. Our study provides a new route to create the Berry curvature change in magnetic topological materials that may lead to potential technological applications.

scholarly journals 2D‐Berry‐Curvature‐Driven Large Anomalous Hall Effect in Layered Topological Nodal‐Line MnAlGe

2021 ◽  
pp. 2006301
Author(s):  
Satya N. Guin ◽  
Qiunan Xu ◽  
Nitesh Kumar ◽  
Hsiang‐Hsi Kung ◽  
Sydney Dufresne ◽  
...  
Keyword(s):  
Hall Effect ◽  
Anomalous Hall Effect ◽  
Nodal Line ◽  
Berry Curvature ◽  
Curvature Driven

scholarly journals Anomalous Hall effect in a magnetically extended topological insulator heterostructure

2020 ◽  
Vol 4 (9) ◽  
Author(s):  
Nan Liu ◽  
Xuefan Niu ◽  
Yuxin Liu ◽  
Qinghua Zhang ◽  
Lin Gu ◽  
...  
Keyword(s):  
Hall Effect ◽  
Topological Insulator ◽  
Anomalous Hall Effect
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