Origin of hysteresis in current-voltage characteristics of polycrystalline silicon thin-film transistors

2009 ◽  
Vol 105 (5) ◽  
pp. 054502 ◽  
Author(s):  
Horng-Chih Lin ◽  
Cheng-Hsiung Hung ◽  
Wei-Chen Chen ◽  
Zer-Ming Lin ◽  
Hsing-Hui Hsu ◽  
...  
1993 ◽  
Vol 297 ◽  
Author(s):  
J.R. Hwang ◽  
J.S. Park ◽  
M.C. Jun ◽  
J. Jang ◽  
M.K. Han

We present results regarding to extraction of altered localized-states in both amorphous silicon and polycrystalline silicon thin film transistors under various conditions, such as electrical and light stress, crystallization, and hydrogenation. Both deep and tail states have been extracted by fitting calculated current-voltage curves to measured data. The density of deep states as well as tail states in a-Si are significantly increased by stress, which may be the predominant mechanism causing the degradation in a-Si TFT performances. Also, the correlations between trap distributions in poly-Si films and their device performances have been successfully identified by analyzing the effects of crystallization and hydrogenation on the current-voltage characteristics of poly-Si TFT’s.


2003 ◽  
Vol 93 ◽  
pp. 79-86
Author(s):  
Mutsumi Kimura ◽  
Teruo Takizawa ◽  
Mitsutoshi Miyasaka ◽  
Satoshi Inoue ◽  
Tatsuya Shimoda

2002 ◽  
Vol 80 (13) ◽  
pp. 2326-2328 ◽  
Author(s):  
Mutsumi Kimura ◽  
Teruo Takizawa ◽  
Satoshi Inoue ◽  
Tatsuya Shimoda

2000 ◽  
Vol 76 (17) ◽  
pp. 2442-2444 ◽  
Author(s):  
C. T. Angelis ◽  
C. A. Dimitriadis ◽  
F. V. Farmakis ◽  
J. Brini ◽  
G. Kamarinos ◽  
...  

2016 ◽  
Vol 63 (10) ◽  
pp. 3964-3970 ◽  
Author(s):  
Meng Zhang ◽  
Zhihe Xia ◽  
Wei Zhou ◽  
Rongsheng Chen ◽  
Man Wong ◽  
...  

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