Analytical current–voltage model for polycrystalline-silicon thin-film transistors

2002 ◽  
Vol 80 (13) ◽  
pp. 2326-2328 ◽  
Author(s):  
Mutsumi Kimura ◽  
Teruo Takizawa ◽  
Satoshi Inoue ◽  
Tatsuya Shimoda
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Silicon Thin Film ◽  
Current Voltage

Origin of hysteresis in current-voltage characteristics of polycrystalline silicon thin-film transistors

2009 ◽  
Vol 105 (5) ◽  
pp. 054502 ◽  
Author(s):  
Horng-Chih Lin ◽  
Cheng-Hsiung Hung ◽  
Wei-Chen Chen ◽  
Zer-Ming Lin ◽  
Hsing-Hui Hsu ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Silicon Thin Film ◽  
Current Voltage ◽  
Current Voltage Characteristics

Analytical Current-Voltage Model for Polycrystalline Silicon Thin-Film Transistors

2003 ◽  
Vol 93 ◽  
pp. 79-86
Author(s):  
Mutsumi Kimura ◽  
Teruo Takizawa ◽  
Mitsutoshi Miyasaka ◽  
Satoshi Inoue ◽  
Tatsuya Shimoda
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Silicon Thin Film ◽  
Current Voltage

Extraction of Altered Localized-States in a-Si and poly-Si TFT’s Under Various Conditions

1993 ◽  
Vol 297 ◽  
Author(s):  
J.R. Hwang ◽  
J.S. Park ◽  
M.C. Jun ◽  
J. Jang ◽  
M.K. Han
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Light Stress ◽  
Measured Data ◽  
Localized States ◽  
Silicon Thin Film ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Si Films

We present results regarding to extraction of altered localized-states in both amorphous silicon and polycrystalline silicon thin film transistors under various conditions, such as electrical and light stress, crystallization, and hydrogenation. Both deep and tail states have been extracted by fitting calculated current-voltage curves to measured data. The density of deep states as well as tail states in a-Si are significantly increased by stress, which may be the predominant mechanism causing the degradation in a-Si TFT performances. Also, the correlations between trap distributions in poly-Si films and their device performances have been successfully identified by analyzing the effects of crystallization and hydrogenation on the current-voltage characteristics of poly-Si TFT’s.

Threshold voltage of excimer-laser-annealed polycrystalline silicon thin-film transistors

2000 ◽  
Vol 76 (17) ◽  
pp. 2442-2444 ◽  
Author(s):  
C. T. Angelis ◽  
C. A. Dimitriadis ◽  
F. V. Farmakis ◽  
J. Brini ◽  
G. Kamarinos ◽  
...  
Keyword(s):  
Thin Film ◽  
Excimer Laser ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Silicon Thin Film

Dynamic-Gate-Stress-Induced Degradation in Bridged-Grain Polycrystalline Silicon Thin-Film Transistors

2016 ◽  
Vol 63 (10) ◽  
pp. 3964-3970 ◽  
Author(s):  
Meng Zhang ◽  
Zhihe Xia ◽  
Wei Zhou ◽  
Rongsheng Chen ◽  
Man Wong ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Silicon Thin Film

Two‐step annealed polycrystalline silicon thin‐film transistors

1996 ◽  
Vol 80 (3) ◽  
pp. 1883-1890 ◽  
Author(s):  
Kwon‐Young Choi ◽  
Min‐Koo Han
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Silicon Thin Film
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