Atomic-scale modeling of chemical vapor deposition processes from new complicated gas-phase mixtures for micro- and nanoelectronic applications

2009 ◽  
Author(s):  
T. M. Makhviladze ◽  
M. E. Sarychev ◽  
Joaquín Marro ◽  
Pedro L. Garrido ◽  
Pablo I. Hurtado
2007 ◽  
Vol 303 (1) ◽  
pp. 362-380 ◽  
Author(s):  
C.R. Kleijn ◽  
R. Dorsman ◽  
K.J. Kuijlaars ◽  
M. Okkerse ◽  
H. van Santen

2013 ◽  
Vol 52 (44) ◽  
pp. 15270-15280 ◽  
Author(s):  
Hangyao Wang ◽  
Heather A. G. Stern ◽  
Debashis Chakraborty ◽  
Hua Bai ◽  
Vincent DiFilippo ◽  
...  

2017 ◽  
Vol 121 (47) ◽  
pp. 26465-26471 ◽  
Author(s):  
Mewlude Imam ◽  
Laurent Souqui ◽  
Jan Herritsch ◽  
Andreas Stegmüller ◽  
Carina Höglund ◽  
...  

1987 ◽  
Vol 102 ◽  
Author(s):  
P.-Y. Lu ◽  
L. M. Williams ◽  
C.-H. Wang ◽  
S. N. G. Chu ◽  
M. H. Ross

ABSTRACTTwo low temperature metalorganic chemical vapor deposition growth techniques, the pre-cracking method and the plasma enhanced method, will be discussed. The pre-cracking technique enables one to grow high quality epitaxial Hg1−xCdxTe on CdTe or CdZnTe substrates at temperatures around 200–250°C. HgTe-CdTe superlattices with sharp interfaces have also been fabricated. Furthermore, for the first time, we have demonstrated that ternary Hg1−xCdTe compounds and HgTe-CdTe superlattices can be successfully grown by the plasma enhanced process at temperatures as low as 135 to 150°C. Material properties such as surface morphology, infrared transmission, Hall mobility, and interface sharpness will be presented.


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