Room-temperature-operating carbon nanotube single-hole transistors with significantly small gate and tunnel capacitances

Yasuhide Ohno; Yoshihiro Asai; Kenzo Maehashi; Koichi Inoue; Kazuhiko Matsumoto

doi:10.1063/1.3078234

Room-temperature-operating carbon nanotube single-hole transistors with significantly small gate and tunnel capacitances

Applied Physics Letters ◽

10.1063/1.3078234 ◽

2009 ◽

Vol 94 (5) ◽

pp. 053112 ◽

Cited By ~ 28

Author(s):

Yasuhide Ohno ◽

Yoshihiro Asai ◽

Kenzo Maehashi ◽

Koichi Inoue ◽

Kazuhiko Matsumoto

Keyword(s):

Carbon Nanotube ◽

Room Temperature ◽

Single Hole ◽

Temperature Operating

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Large Temperature Dependence of Coulomb Blockade Oscillations in Room-Temperature-Operating Silicon Single-Hole Transistor

Japanese Journal of Applied Physics ◽

10.1143/jjap.45.6157 ◽

2006 ◽

Vol 45 (8A) ◽

pp. 6157-6161 ◽

Cited By ~ 4

Author(s):

Masaharu Kobayashi ◽

Masumi Saitoh ◽

Toshiro Hiramoto

Keyword(s):

Temperature Dependence ◽

Coulomb Blockade ◽

Room Temperature ◽

Large Temperature ◽

Single Hole ◽

Temperature Operating

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Tunneling Barrier Structure in Room-Temperature Operating Silicon Single-Electron and Single-Hole Transistors

10.7567/ssdm.2002.f-2-5 ◽

2002 ◽

Author(s):

M. Saitoh ◽

H. Majima ◽

T. Hiramoto

Keyword(s):

Room Temperature ◽

Single Electron ◽

Barrier Structure ◽

Tunneling Barrier ◽

Single Hole ◽

Temperature Operating

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Large Temperature Dependence of Negative Differential Conductance in Room-Temperature Operating Silicon Single-Electron/Single-Hole Transistor

2005 International Semiconductor Device Research Symposium ◽

10.1109/isdrs.2005.1596038 ◽

2006 ◽

Author(s):

M. Kobayashi ◽

K. Miyaji ◽

M. Saitoh ◽

T. Hiramoto

Keyword(s):

Temperature Dependence ◽

Room Temperature ◽

Single Electron ◽

Differential Conductance ◽

Large Temperature ◽

Negative Differential Conductance ◽

Single Hole ◽

Temperature Operating

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Extremely high flexibilities of Coulomb blockade and negative differential conductance oscillations in room-temperature-operating silicon single hole transistor

Applied Physics Letters ◽

10.1063/1.2857501 ◽

2008 ◽

Vol 92 (7) ◽

pp. 073502 ◽

Cited By ~ 19

Author(s):

Sejoon Lee ◽

Kousuke Miyaji ◽

Masaharu Kobayashi ◽

Toshiro Hiramoto

Keyword(s):

Coulomb Blockade ◽

Room Temperature ◽

Differential Conductance ◽

Negative Differential Conductance ◽

Single Hole ◽

Temperature Operating

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Large Temperature Dependence of Coulomb Blockade Oscillations in Room-Temperature Operating Silicon Single-Hole Transistor

10.7567/ssdm.2005.g-2-1 ◽

2005 ◽

Author(s):

Masaharu Kobayashi ◽

Masumi Saitoh ◽

Toshiro Hiramoto

Keyword(s):

Temperature Dependence ◽

Coulomb Blockade ◽

Room Temperature ◽

Large Temperature ◽

Single Hole ◽

Temperature Operating

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Control of Single-Hole Transition in Carbon Nanotube Transistor with Quantum Dot in Gate Insulator at Room Temperature

Physical and Chemical Properties of Carbon Nanotubes ◽

10.5772/51884 ◽

2013 ◽

Cited By ~ 2

Author(s):

Takafumi Kamimura ◽

Yutaka Hayashi ◽

Kazuhiko Matsumoto

Keyword(s):

Carbon Nanotube ◽

Quantum Dot ◽

Room Temperature ◽

Gate Insulator ◽

Single Hole ◽

Hole Transition

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Room Temperature Operation of Carbon Nanotube Single-Hole Transistors Fabricated by Shadow Evaporation Methods

10.7567/ssdm.2008.f-8-2 ◽

2008 ◽

Author(s):

Y. Ohno ◽

Y. Asai ◽

K. Maehashi ◽

K. Inoue ◽

K. Matsumoto

Keyword(s):

Carbon Nanotube ◽

Room Temperature ◽

Single Hole ◽

Room Temperature Operation ◽

Shadow Evaporation

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Fabrication of Room-Temperature-Operating Carbon Nanotube Single-Charge Transistors

Sensors and Materials ◽

10.18494/sam.2009.597 ◽

2009 ◽

pp. 393

Keyword(s):

Carbon Nanotube ◽

Room Temperature ◽

Single Charge ◽

Temperature Operating

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Room-Temperature Single-Hole Transistors Made Using Semiconductor Carbon Nanotube with Artificial Defects near Carrier Depletion Region

Japanese Journal of Applied Physics ◽

10.1143/jjap.44.461 ◽

2005 ◽

Vol 44 (1A) ◽

pp. 461-464 ◽

Cited By ~ 9

Author(s):

Takafumi Kamimura ◽

Masatoshi Maeda ◽

Kazue Sakamoto ◽

Kazuhiko Matsumoto

Keyword(s):

Carbon Nanotube ◽

Room Temperature ◽

Depletion Region ◽

Single Hole

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Tunneling Barrier Structures in Room-Temperature Operating Silicon Single-Electron and Single-Hole Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.42.2426 ◽

2003 ◽

Vol 42 (Part 1, No. 4B) ◽

pp. 2426-2428 ◽

Cited By ~ 23

Author(s):

Masumi Saitoh ◽

Hideaki Majima ◽

Toshiro Hiramoto

Keyword(s):

Room Temperature ◽

Single Electron ◽

Tunneling Barrier ◽

Single Hole ◽

Temperature Operating

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