Oxygen induced strain field homogenization in AlN nucleation layers and its impact on GaN grown by metal organic vapor phase epitaxy on sapphire: An x-ray diffraction study

2009 ◽  
Vol 105 (3) ◽  
pp. 033504 ◽  
Author(s):  
J. Bläsing ◽  
A. Krost ◽  
J. Hertkorn ◽  
F. Scholz ◽  
L. Kirste ◽  
...  
Keyword(s):  
Diffraction Study ◽  
Vapor Phase ◽  
Strain Field ◽  
Vapor Phase Epitaxy ◽  
X Ray Diffraction ◽  
X Ray ◽  
Organic Vapor ◽  
Metal Organic

High-resolution microbeam x-ray diffractometry applied to InGaAsP/InP layers grown by narrow-stripe selective metal-organic vapor phase epitaxy

2000 ◽  
Vol 77 (9) ◽  
pp. 1286-1288 ◽  
Author(s):  
Shigeru Kimura ◽  
Hidekazu Kimura ◽  
Kenji Kobayashi ◽  
Tomoaki Oohira ◽  
Koich Izumi ◽  
...  
Keyword(s):  
High Resolution ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
X Ray ◽  
Organic Vapor ◽  
Metal Organic ◽  
Narrow Stripe

Bragg and Laue x-ray diffraction study of dislocations in thick hydride vapor phase epitaxy GaN films

2000 ◽  
Vol 88 (11) ◽  
pp. 6252-6259 ◽  
Author(s):  
V. Ratnikov ◽  
R. Kyutt ◽  
T. Shubina ◽  
T. Paskova ◽  
E. Valcheva ◽  
...  
Keyword(s):  
Diffraction Study ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
X Ray Diffraction ◽  
X Ray

scholarly journals An instrument for in situ coherent x-ray studies of metal-organic vapor phase epitaxy of III-nitrides

2017 ◽  
Vol 88 (3) ◽  
pp. 035113 ◽  
Author(s):  
Guangxu Ju ◽  
Matthew J. Highland ◽  
Angel Yanguas-Gil ◽  
Carol Thompson ◽  
Jeffrey A. Eastman ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
X Ray ◽  
Organic Vapor ◽  
Metal Organic

scholarly journals Эпитаксия слоев GaN(0001) или GaN(1011) на подложке Si(100)

2019 ◽  
Vol 45 (11) ◽  
pp. 3
Author(s):  
В.Н. Бессолов ◽  
М.Е. Компан ◽  
Е.В. Коненкова ◽  
В.Н. Пантелеев ◽  
С.Н. Родин ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Buffer Layers ◽  
X Ray Diffraction ◽  
Organic Vapor ◽  
Metal Organic ◽  
Aln Buffer ◽  
Semipolar Gan ◽  
Nanostructured Si

AbstractTwo different approaches to epitaxy of 4-μm-thick layers of polar GaN(0001) and semipolar GaN(10 $$\bar {1}$$ 1) on a V -shaped nanostructured Si(100) substrate with nanometer-thick SiC and AlN buffer layers have been experimentally demonstrated. The GaN(0001) layers were synthesized by hydride vapor-phase epitaxy, and GaN(10 $$\bar {1}$$ 1) layers, by metal-organic vapor-phase epitaxy, with the growth completed by hydride vapor-phase epitaxy. It was shown that layers of the polar GaN(0002) have a longitudinal elastic stress of –0.45 GPa and the minimum full width at half-maximum of the X-ray diffraction rocking curve ω_θ ~ 45 arcmin, whereas for the semipolar GaN(10 $$\bar {1}$$ 1), these values are –0.29 GPa and ω_θ ~ 22 arcmin, respectively. A conclusion is drawn that the combined technology of semipolar gallium nitride on a silicon (100) substrate is promising.

scholarly journals Легированный кремнием GaSb, выращенный методом ГФЭМОС в широком диапазоне соотношений V/III

2021 ◽  
Vol 55 (10) ◽  
pp. 931
Author(s):  
Р.В. Левин ◽  
А.С. Власов ◽  
Б.В. Пушный
Keyword(s):  
Raman Scattering ◽  
Carrier Concentration ◽  
Vapor Phase ◽  
Free Carrier ◽  
Free Carrier Concentration ◽  
X Ray Diffraction ◽  
X Ray ◽  
Organic Vapor ◽  
Metal Organic ◽  
Si Doped

Charachterization of Si-doped GaSb epitaxial layers grown by metal organic vapor phase epitaxy is presented. Samples are grown at constant SiH4 flow with a TMSb/TEGa ratio ranged from 1 to 50. X-ray diffraction, Raman scattering, photoluminescence, resistivity, free carrier concentration and their mobility are studied.

scholarly journals Real-time x-ray studies of crystal growth modes during metal-organic vapor phase epitaxy of GaN on c- and m-plane single crystals

2014 ◽  
Vol 105 (5) ◽  
pp. 051602 ◽  
Author(s):  
Edith Perret ◽  
M. J. Highland ◽  
G. B. Stephenson ◽  
S. K. Streiffer ◽  
P. Zapol ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Single Crystals ◽  
Real Time ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
X Ray ◽  
Organic Vapor ◽  
Growth Modes ◽  
Metal Organic

Growth of High Quality c-plane AlN on a-plane Sapphire

2009 ◽  
Vol 1202 ◽  
Author(s):  
Reina Miyagawa ◽  
Jiejun Wu ◽  
Hideto Miyake ◽  
Kazumasa Hiramatsu
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Organic Vapor ◽  
Atomic Force ◽  
Metal Organic ◽  
Dislocations Density ◽  
Reactor Pressure

Abstractc-plane (0001) AlN layers were grown on sapphire (11-20) and (0001) substrates by hydride vapor phase epitaxy (HVPE) and metal-organic vapor phase epitaxy (MOVPE), respectively. The growth temperatures were adjusted from 1430-1500 °C and the reactor pressure was kept constant at 30 Torr. Mirror and flat c-plane AlN were obtained grown on both a-plane and c-plane sapphire. Crystalline quality and surface roughness are improved with increasing growth temperature, detected by high resolution X-ray diffraction (HRXRD) and atomic force microscopy (AFM). The Full widths at half maximum (FWHM) values of (10-12) diffraction are 519 and 1219 arcsec for c-plane AlN grown on a-plane sapphire and c-plane sapphire, respectively. It indicates that a-plane sapphire substrate benefits to decrease dislocations density.

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