Reducing the critical current for spin-transfer switching of perpendicularly magnetized nanomagnets

2009 ◽  
Vol 94 (1) ◽  
pp. 012502 ◽  
Author(s):  
S. Mangin ◽  
Y. Henry ◽  
D. Ravelosona ◽  
J. A. Katine ◽  
Eric E. Fullerton
Keyword(s):  
Critical Current ◽  
Spin Transfer

scholarly journals Dipolar field effects on the critical current for spin transfer switch of iron and permalloy nanoelements

2014 ◽  
Vol 115 (17) ◽  
pp. 17D130 ◽  
Author(s):  
L. L. Oliveira ◽  
J. T. S. Dantas ◽  
R. M. Souza ◽  
A. S. Carriço ◽  
Ana L. Dantas
Keyword(s):  
Critical Current ◽  
Spin Transfer ◽  
Dipolar Field ◽  
Field Effects

scholarly journals Theoretical Study of Field-Free Switching in PMA-MTJ Using Combined Injection of STT and SOT Currents

Micromachines ◽  
2021 ◽  
Vol 12 (11) ◽  
pp. 1345
Author(s):  
Shaik Wasef ◽  
Hossein Fariborzi
Keyword(s):  
Critical Current ◽  
Theoretical Study ◽  
Tunnel Junctions ◽  
Spin Transfer Torque ◽  
Spin Transfer ◽  
Spin Orbit ◽  
Micromagnetic Simulations ◽  
Spintronic Devices ◽  
Current Densities ◽  
The Relationship

Field-free switching in perpendicular magnetic tunnel junctions (P-MTJs) can be achieved by combined injection of spin-transfer torque (STT) and spin-orbit torque (SOT) currents. In this paper, we derived the relationship between the STT and SOT critical current densities under combined injection. We included the damping–like torque (DLT) and field-like torque (FLT) components of both the STT and SOT. The results were derived when the ratio of the FLT to the DLT component of the SOT was positive. We observed that the relationship between the critical SOT and STT current densities depended on the damping constant and the magnitude of the FLT component of the STT and the SOT current. We also noted that, unlike the FLT component of SOT, the magnitude and sign of the FLT component of STT did not have a significant effect on the STT and SOT current densities required for switching. The derived results agreed well with micromagnetic simulations. The results of this work can serve as a guideline to model and develop spintronic devices using a combined injection of STT and SOT currents.

scholarly journals Toward Wafer Scale Inductive Characterization of Spin-Transfer Torque Critical Current Density of Magnetic Tunnel Junction Stacks

2015 ◽  
Vol 51 (1) ◽  
pp. 1-4 ◽  
Author(s):  
Sibylle Sievers ◽  
Niklas Liebing ◽  
Santiago Serrano-Guisan ◽  
Ricardo Ferreira ◽  
Elvira Paz ◽  
...  
Keyword(s):  
Critical Current Density ◽  
Critical Current ◽  
Current Density ◽  
Tunnel Junction ◽  
Magnetic Tunnel Junction ◽  
Spin Transfer Torque ◽  
Spin Transfer ◽  
Wafer Scale

The dependence of critical current density of GdFeCo layer on composition of thermally assisted STT-RAM

2017 ◽  
Vol 31 (16-19) ◽  
pp. 1744075
Author(s):  
B. Dai ◽  
J. Zhu ◽  
K. Liu ◽  
L. Yang ◽  
J. Han
Keyword(s):  
Critical Current Density ◽  
Critical Current ◽  
Current Density ◽  
Anisotropy Constant ◽  
Spin Transfer Torque ◽  
Spin Transfer ◽  
Text Memory ◽  
Effective Anisotropy Constant ◽  
Current Densities ◽  
Magneto Resistance

Amorphous rare earth–transitional metal (RETM) GdFeCo memory layer with RE- and TM-rich compositions was fabricated in stacks of GdFeCo (10 nm)/Cu (3 nm)/[Co(0.2 nm)/Pd(0.4 nm)]6. Their magnetic properties and spin transfer torque (STT) switching of magnetization were investigated. The maximum magneto-resistance (MR) was around 0.24% for the TM-rich Gd[Formula: see text] (Fe[Formula: see text]Co[Formula: see text])[Formula: see text] memory layer and was −0.03% for the RE-rich Gd[Formula: see text] (Fe[Formula: see text]Co[Formula: see text])[Formula: see text] memory layer. The critical current densities [Formula: see text] to switch the GdFeCo memory layers are in the range of [Formula: see text] A/cm2–[Formula: see text] A/cm2. The dependence of critical current density [Formula: see text] and effective anisotropy constant [Formula: see text] on Gd composition were also investigated. Both [Formula: see text] and [Formula: see text] have maximum values in the Gd composition range from 21–29 at.%, suitable for thermally assisted STT-RAM for storage density exceeding Gb/inch2.

Sign in / Sign up

Export Citation Format

Share Document