Reduction of critical current density for spin transfer magnetization switching in a spin-valve nano-pillar

2006 ◽  
Author(s):  
C. H. Kang ◽  
J. C. Lee ◽  
K. H. ◽  
S. H. Lim
Keyword(s):  
Critical Current Density ◽  
Critical Current ◽  
Current Density ◽  
Spin Valve ◽  
Spin Transfer ◽  
Magnetization Switching

scholarly journals Micromagnetic Simulation of Strain-Assisted Current-Induced Magnetization Switching

2016 ◽  
Vol 2016 ◽  
pp. 1-6
Author(s):  
H. B. Huang ◽  
C. P. Zhao ◽  
X. Q. Ma
Keyword(s):  
Critical Current Density ◽  
Critical Current ◽  
Current Density ◽  
Phase Field ◽  
Tunnel Junctions ◽  
Magnetic Domain ◽  
Misfit Strain ◽  
Micromagnetic Simulation ◽  
Magnetization Switching ◽  
Out Of Plane

We investigated the effect of substrate misfit strain on the current-induced magnetization switching in magnetic tunnel junctions by combining micromagnetic simulation with phase-field microelasticity theory. Our results indicate that the positive substrate misfit strain can decrease the critical current density of magnetization switching by pushing the magnetization from out-of-plane to in-plane directions, while the negative strain pushes the magnetization back to the out-of-plane directions. The magnetic domain evolution is obtained to demonstrate the strain-assisted current-induced magnetization switching.

scholarly journals Toward Wafer Scale Inductive Characterization of Spin-Transfer Torque Critical Current Density of Magnetic Tunnel Junction Stacks

2015 ◽  
Vol 51 (1) ◽  
pp. 1-4 ◽  
Author(s):  
Sibylle Sievers ◽  
Niklas Liebing ◽  
Santiago Serrano-Guisan ◽  
Ricardo Ferreira ◽  
Elvira Paz ◽  
...  
Keyword(s):  
Critical Current Density ◽  
Critical Current ◽  
Current Density ◽  
Tunnel Junction ◽  
Magnetic Tunnel Junction ◽  
Spin Transfer Torque ◽  
Spin Transfer ◽  
Wafer Scale

The dependence of critical current density of GdFeCo layer on composition of thermally assisted STT-RAM

2017 ◽  
Vol 31 (16-19) ◽  
pp. 1744075
Author(s):  
B. Dai ◽  
J. Zhu ◽  
K. Liu ◽  
L. Yang ◽  
J. Han
Keyword(s):  
Critical Current Density ◽  
Critical Current ◽  
Current Density ◽  
Anisotropy Constant ◽  
Spin Transfer Torque ◽  
Spin Transfer ◽  
Text Memory ◽  
Effective Anisotropy Constant ◽  
Current Densities ◽  
Magneto Resistance

Amorphous rare earth–transitional metal (RETM) GdFeCo memory layer with RE- and TM-rich compositions was fabricated in stacks of GdFeCo (10 nm)/Cu (3 nm)/[Co(0.2 nm)/Pd(0.4 nm)]6. Their magnetic properties and spin transfer torque (STT) switching of magnetization were investigated. The maximum magneto-resistance (MR) was around 0.24% for the TM-rich Gd[Formula: see text] (Fe[Formula: see text]Co[Formula: see text])[Formula: see text] memory layer and was −0.03% for the RE-rich Gd[Formula: see text] (Fe[Formula: see text]Co[Formula: see text])[Formula: see text] memory layer. The critical current densities [Formula: see text] to switch the GdFeCo memory layers are in the range of [Formula: see text] A/cm2–[Formula: see text] A/cm2. The dependence of critical current density [Formula: see text] and effective anisotropy constant [Formula: see text] on Gd composition were also investigated. Both [Formula: see text] and [Formula: see text] have maximum values in the Gd composition range from 21–29 at.%, suitable for thermally assisted STT-RAM for storage density exceeding Gb/inch2.

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