scholarly journals Micromagnetic simulations of persistent oscillatory modes excited by spin-polarized current in nanoscale exchange-biased spin valves

2009 ◽  
Vol 105 (7) ◽  
pp. 07D107 ◽  
Author(s):  
G. Siracusano ◽  
G. Finocchio ◽  
I. N. Krivorotov ◽  
L. Torres ◽  
G. Consolo ◽  
...  
Keyword(s):  
Spin Valves ◽  
Micromagnetic Simulations ◽  
Spin Polarized

Spin-polarized transport in magnetically assembled carbon nanotube spin valves

2006 ◽  
Vol 89 (3) ◽  
pp. 033119 ◽  
Author(s):  
R. Thamankar ◽  
S. Niyogi ◽  
B. Y. Yoo ◽  
Y. W. Rheem ◽  
N. V. Myung ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Spin Valves ◽  
Spin Polarized ◽  
Polarized Transport ◽  
Spin Polarized Transport

scholarly journals A Novel Design of a 3D Racetrack Memory Based on Functional Segments in Cylindrical Nanowire Arrays

Nanomaterials ◽  
2020 ◽  
Vol 10 (12) ◽  
pp. 2403
Author(s):  
Javier Rial ◽  
Mariana P. Proenca
Keyword(s):  
Low Cost ◽  
Memory Device ◽  
Nanowire Arrays ◽  
High Yield ◽  
Magnetic Domains ◽  
Micromagnetic Simulations ◽  
Current Pulses ◽  
Spin Polarized ◽  
Innovative Idea ◽  
Vertically Aligned

A racetrack memory is a device where the information is stored as magnetic domains (bits) along a nanowire (track). To read and record the information, the bits are moved along the track by current pulses until they reach the reading/writing heads. In particular, 3D racetrack memory devices use arrays of vertically aligned wires (tracks), thus enhancing storage density. In this work, we propose a novel 3D racetrack memory configuration based on functional segments inside cylindrical nanowire arrays. The innovative idea is the integration of the writing element inside the racetrack itself, avoiding the need to implement external writing heads next to the track. The use of selective magnetic segments inside one nanowire allows the creation of writing and storage sections inside the same track, separated by chemical constraints identical to those separating the bits. Using micromagnetic simulations, our study reveals that if the writing section is composed of two segments with different coercivities, one can reverse its magnetization independently from the rest of the memory device by applying an external magnetic field. Spin-polarized current pulses then move the information bits along selected tracks, completing the writing process by pushing the new bit into the storage section of the wire. Finally, we have proven the efficacy of this system inside an array of 7 nanowires, opening the possibility to use this configuration in a 3D racetrack memory device composed of an array of thousands of nanowires produced by low-cost and high-yield template-electrodeposition methods.

scholarly journals Large-amplitude coherent spin waves excited by spin-polarized current in nanoscale spin valves

2007 ◽  
Vol 76 (2) ◽  
Author(s):  
I. N. Krivorotov ◽  
D. V. Berkov ◽  
N. L. Gorn ◽  
N. C. Emley ◽  
J. C. Sankey ◽  
...  
Keyword(s):  
Large Amplitude ◽  
Spin Waves ◽  
Spin Valves ◽  
Spin Polarized ◽  
Coherent Spin

scholarly journals From spin-polarized interfaces to giant magnetoresistance in organic spin valves

2014 ◽  
Vol 89 (11) ◽  
Author(s):  
Deniz Çakır ◽  
Diana M. Otálvaro ◽  
Geert Brocks
Keyword(s):  
Giant Magnetoresistance ◽  
Spin Valves ◽  
Spin Polarized

Studies of spin related processes in fullerene C60 devices

2018 ◽  
Vol 6 (14) ◽  
pp. 3621-3627 ◽  
Author(s):  
Haoliang Liu ◽  
Jingying Wang ◽  
Matthew Groesbeck ◽  
Xin Pan ◽  
Chuang Zhang ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Field Effect ◽  
Magnetic Field Effect ◽  
Spin Current ◽  
Fullerene C60 ◽  
Spin Valves ◽  
Pure Spin ◽  
Carrier Injection ◽  
Current Generation ◽  
Spin Polarized

We have investigated spin related processes in fullerene C60 devices using a several experimental techniques, which include magnetic field effect of photocurrent and electroluminescence in C60-based diodes; spin polarized carrier injection in C60-based spin-valves; and pure spin current generation in NiFe/C60/Pt trilayer devices.

scholarly journals COMPARATIVE STUDY OF SPIN INJECTION AND TRANSPORT IN Alq3 AND Co–PHTHALOCYANINE-BASED ORGANIC SPIN VALVES

SPIN ◽  
2014 ◽  
Vol 04 (02) ◽  
pp. 1440009 ◽  
Author(s):  
SAYANI MAJUMDAR ◽  
SUKUMAR DEY ◽  
HANNU HUHTINEN ◽  
JOHNNY DAHL ◽  
MARJUKKA TUOMINEN ◽  
...  
Keyword(s):  
Single Molecule ◽  
Giant Magnetoresistance ◽  
Chemical Reactivity ◽  
Spin Injection ◽  
Spin Valve ◽  
Spin Valves ◽  
Half Metallic ◽  
High Expectations ◽  
Spacer Layer ◽  
Spin Polarized

Recent experimental reports suggest the formation of a highly spin-polarized interface ("spinterface") between a ferromagnetic (FM) Cobalt ( Co ) electrode and a metal-phthalocyanine (Pc) molecule. Another report shows an almost 60% giant magnetoresistance (GMR) response measured on Co / H 2 Pc -based single molecule spin valves. In this paper, we compare the spin injection and transport properties of organic spin valves with two different organic spacers, namely Tris(8-hydroxyquinolinato) aluminum ( Alq 3) and CoPc sandwiched between half-metallic La 0.7 Sr 0.3 MnO 3 (LSMO) and Co electrodes. Alq 3-based spin valves exhibit clear and reproducible spin valve switching with almost 35% negative GMR at 10 K, in accordance with previous reports. In contrast, cobalt-pthalocyanine ( CoPc )-based spin valves fail to show clear GMR response above noise level despite high expectations based on recent reports. Investigations of electronic, magnetic and magnetotransport properties of electrode/spacer interfaces of LSMO/ CoPc / Co devices offer three plausible explanations for the absence of GMR: (1) CoPc films are strongly chemisorbed on the LSMO surface. This improves the LSMO magnetic properties but also induces local traps at the LSMO interface for spin-polarized charge carriers. (2) At the Co / CoPc interface, diffusion of Co atoms into the organic semiconductor (OS) layer and chemical reactivity between Co and the OS deteriorates the FM properties of Co . This renders the Co / CoPc interface as unsuitable for efficient spin injection. (3) The presence of heavy Co atoms in CoPc leads to large spin–orbit coupling in the spacer. The spin relaxation time in the CoPc layer is therefore considerably smaller compared to Alq 3. Based on these findings, we suggest that the absence of GMR in CoPc -based spin valves is caused by a combined effect of inefficient spin injection from FM contacts and poor spin transport in the CoPc spacer layer.

Electric injection and detection of spin-polarized electrons in lateral spin valves on ferromagnetic metal-semiconductor InSb heterojunctions

JETP Letters ◽  
2015 ◽  
Vol 101 (2) ◽  
pp. 113-117 ◽  
Author(s):  
N. A. Viglin ◽  
V. V. Ustinov ◽  
V. M. Tsvelikhovskaya ◽  
T. N. Pavlov
Keyword(s):  
Ferromagnetic Metal ◽  
Spin Valves ◽  
Polarized Electrons ◽  
Spin Polarized

Magnetization reversal driven by spin-polarized current in exchange-biased nanoscale spin valves

2007 ◽  
Vol 76 (17) ◽  
Author(s):  
G. Finocchio ◽  
I. N. Krivorotov ◽  
L. Torres ◽  
R. A. Buhrman ◽  
D. C. Ralph ◽  
...  
Keyword(s):  
Magnetization Reversal ◽  
Spin Valves ◽  
Spin Polarized
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