Ultra-Shallow Junctions Fabrication by Plasma Immersion Implantation on PULSION® Followed by Laser Thermal Processing

2008 ◽  
Author(s):  
Frank Torregrosa ◽  
Hasnaa Etienne ◽  
Guillaume Sempere ◽  
Gilles Mathieu ◽  
Laurent Roux ◽  
...  
Keyword(s):  
Thermal Processing ◽  
Shallow Junctions ◽  
Ultra Shallow Junctions ◽  
Laser Thermal Processing

Effect of Laser Thermal Processing on Defect Evolution in Silicon

2002 ◽  
Vol 717 ◽  
Author(s):  
Erik Kuryliw ◽  
Kevin S. Jones ◽  
David Sing ◽  
Michael J. Rendon ◽  
Somit Talwar
Keyword(s):  
Point Defects ◽  
Thermal Processing ◽  
Defect Formation ◽  
Secondary Ion Mass Spectrometry ◽  
Laser Energy ◽  
Process Window ◽  
Loop Formation ◽  
Transmission Electron ◽  
Ultra Shallow Junctions ◽  
Laser Thermal Processing

AbstractLaser Thermal Processing (LTP) involves laser melting of an implantation induced preamorphized layer to form highly doped ultra shallow junctions in silicon. In theory, a large number of interstitials remain in the end of range (EOR) just below the laser-formed junction. There is also the possibility of quenching in point defects during the liquid phase epitaxial regrowth of the melt region. Since post processing anneals are inevitable, it is necessary to understand both the behavior of these interstitials and the nature of point defects in the recrystallized-melt region since they can directly affect deactivation and enhanced diffusion. In this study, an amorphizing 15 keV 1 x 1015/cm2 Si+ implant was done followed by a 1 keV 1 x 1014/cm2 B+ implant. The surface was then laser melted at energy densities between 0.74 and 0.9 J/cm2 using a 308 nm excimer-laser. It was found that laser energy densities above 0.81 J/cm2 melted past the amorphous-crystalline interface. Post-LTP furnace anneals were performed at 750°C for 2 and 4 hours. Transmission electron microscopy was used to analyze the defect formation after LTP and following furnace anneals. Secondary ion mass spectrometry measured the initial and final boron profiles. It was observed that increasing the laser energy density led to increased dislocation loop formation and increased diffusion after the furnace anneal. A maximum loop density and diffusion was observed at the end of the process window, suggesting a correlation between the crystallization defects and the interstitial evolution.

The effects of rapid thermal processing on ultra-shallow junctions for deep sub-micron MOSFETs

1995 ◽  
Vol 38 (8) ◽  
pp. 1473-1477 ◽  
Author(s):  
R Liu ◽  
C.-Y Lu ◽  
J.J Sung ◽  
C.-S Pai ◽  
N.-S Tsai
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Shallow Junctions ◽  
Ultra Shallow Junctions

Experiment and Modelisation Results on Laser Thermal Processing for Ultra-Shallow Junction Formation: Influence of Laser Pulse Duration

2003 ◽  
Vol 765 ◽  
Author(s):  
J. Venturini ◽  
M. Hernandez ◽  
D. Zahorski ◽  
G. Kerrien ◽  
T. Sarnet ◽  
...  
Keyword(s):  
Pulse Duration ◽  
Thermal Processing ◽  
Secondary Ion Mass Spectrometry ◽  
Fundamental Problem ◽  
Laser Pulses ◽  
Potential Candidate ◽  
Technology Roadmap ◽  
The Future ◽  
Ultra Shallow Junctions ◽  
Laser Thermal Processing

AbstractAccording to the International Technology Roadmap for Semiconductors (ITRS), the doping technology requirements for the MOSFET source and drain regions of the future CMOS generations lead to a major challenge. A critical point of this evolution is the formation of ultra-shallow junctions(USJ) for which present technologies, based on ion implantation and rapid thermal annealing, will hardly meet the ITRS specifications. Laser Thermal Processing (LTP) has been shown to be a potential candidate to solve this fundamental problem. In the present paper, LTP experiments have been performed with two XeCl excimer lasers (λ= 308 nm) with different pulse characteristics. The first laser (Lambda Physik, Compex 102) delivers 200 mJ laser pulses with a duration of ∼25 ns. The second laser is an industrial tool (SOPRA, VEL 15) that delivers 16 J laser pulses with a duration of ∼200 ns and allows to anneal a few cm die in a single laser shot. Here we examine the influence of the pulse duration on LTP of B+ (with and without Ge+ pre-amorphization) and BF2 implanted silicon samples on the basis of real-time optical monitoring of the laser induced melting/recrystallisation process, four-point probe resistivity measurements, secondary ion mass spectrometry (SIMS) depth profiles. Experimental results are compared to finite element modelisation (FIDAP Fluent Software) that takes into account both laser pulses. The activated dopant dose, junction depth and sheet resistance, as a function of the laser fluence and shot number for both lasers, confirm the efficiency of laser processing to realize ultra-shallow and highly doped junctions as required by the future CMOS generations. Influence of the pulse duration on the USJ formation process is also discussed.

Laser thermal processing for shallow junction and silicide formation

1998 ◽  
Author(s):  
Somit Talwar ◽  
Gaurav Verma ◽  
Kurt H. Weiner ◽  
Carol Gelatos
Keyword(s):  
Thermal Processing ◽  
Silicide Formation ◽  
Shallow Junction ◽  
Laser Thermal Processing

Formation of Ultra-Shallow Junctions by Advanced Plasma Doping Techniques

2011 ◽  
Author(s):  
G. D. Papasouliotis ◽  
L. Godet ◽  
V. Singh ◽  
R. Miura ◽  
H. Ito ◽  
...  
Keyword(s):  
Plasma Doping ◽  
Shallow Junctions ◽  
Ultra Shallow Junctions

Leakage optimization of ultra-shallow junctions formed by solid phase epitaxial regrowth

2004 ◽  
Vol 22 (1) ◽  
pp. 306 ◽  
Author(s):  
R. Lindsay ◽  
K. Henson ◽  
W. Vandervorst ◽  
K. Maex ◽  
B. J. Pawlak ◽  
...  
Keyword(s):  
Solid Phase ◽  
Epitaxial Regrowth ◽  
Shallow Junctions ◽  
Ultra Shallow Junctions
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