Cluster Size Dependence of Etching by Reactive Gas Cluster Ion Beams

2008 ◽  
Author(s):  
Noriaki Toyoda ◽  
Iaso Yamada ◽  
Edmund G. Seebauer ◽  
Susan B. Felch ◽  
Amitabh Jain ◽  
...  
Keyword(s):  
Cluster Size ◽  
Size Dependence ◽  
Ion Beams ◽  
Cluster Ion Beams ◽  
Cluster Ion ◽  
Reactive Gas

Irradiation Effects of Ar-Cluster Ion Beams on Si Surfaces

1993 ◽  
Vol 316 ◽  
Author(s):  
G. H. Takaoka ◽  
G. Sugahara ◽  
R. E. Hummel ◽  
J. A. Northby ◽  
M. Sosnowski ◽  
...  
Keyword(s):  
Cluster Size ◽  
Ion Beams ◽  
Cluster Ions ◽  
Irradiation Effects ◽  
Damage Layer ◽  
Ion Energies ◽  
Cluster Ion Beams ◽  
Cluster Ion ◽  
The Mean

ABSTRACTThe effects of energetic Ar cluster ion impacts on Si(111) surfaces have been studied for cluster energies up to l5keV. The mean cluster size was about 1000 atoms, and the smaller sizes could be systematically excluded. Si samples irradiated at different cluster ion energies were analyzed by RBS, ellipsometry, and differential reflectometry. Implantation of Ar in samples irradiated with cluster ions was found by RBS to be detectable, but very small in comparison with samples irradiated with monomer ions of the same energy. The thickness of the damage layer as measured by both ellipsometry and differential reflectometry was also much smaller in the cluster ion irradiated samples.

scholarly journals The effects of cluster size on sputtering and surface smoothing of PMMA with gas cluster ion beams

2011 ◽  
Vol 36 (3) ◽  
pp. 309-312 ◽  
Author(s):  
K. Ichiki ◽  
S. Ninomiya ◽  
T. Seki ◽  
T. Aoki ◽  
J. Matsuo
Keyword(s):  
Cluster Size ◽  
Ion Beams ◽  
Surface Smoothing ◽  
Cluster Ion Beams ◽  
Cluster Ion

High rate etching of GaAs and GaP by gas cluster ion beams

2003 ◽  
Vol 792 ◽  
Author(s):  
Masahiro Nagano ◽  
Shingo Houzumi ◽  
Noriaki Toyoda ◽  
Susumu Yamada ◽  
Shirabe Akita ◽  
...  
Keyword(s):  
Cluster Size ◽  
Ion Beam ◽  
Ion Beams ◽  
High Rate ◽  
Cluster Ion Beams ◽  
Cluster Ion ◽  
New Processing ◽  
Gas Cluster Ion Beam ◽  
Ar Gas ◽  
Sputtering Yields

ABSTRACTGas cluster ion beam (GCIB) techniques have recently been proposed as new processing methods. We have been investigating the characteristics of GCIB techniques through sputtering GaAs and GaP by Ar gas cluster ion beams as a function of cluster size and acceleration energy. The Ar cluster size was selected by a magnetic spectrometer, and was obtained from the mass spectra measured by a time of flight mass spectrometer. The average sputtering yields of GaAs and GaP were 0–47 and 0–66 atoms/ion for 5–30 k V, respectively. The sputtering yields of GaAs and GaP were higher than those of an Ar monomer ion.

Cluster size dependences of bombardment effects using mass-selected gas cluster ion beams

2007 ◽  
Vol 261 (1-2) ◽  
pp. 660-663 ◽  
Author(s):  
Kazuhiro Nakamura ◽  
Shingo Houzumi ◽  
Noriaki Toyoda ◽  
Kozo Mochiji ◽  
Toru Mitamura ◽  
...  
Keyword(s):  
Cluster Size ◽  
Ion Beams ◽  
Cluster Ion Beams ◽  
Cluster Ion

Sputtering yield measurements with size-selected gas cluster ion beams

2009 ◽  
Vol 1181 ◽  
Author(s):  
Kazuya Ichiki ◽  
Satoshi Ninomiya ◽  
Toshio Seki ◽  
Takaaki Aoki ◽  
Jiro Matsuo
Keyword(s):  
Cluster Size ◽  
Ion Beams ◽  
Cluster Ions ◽  
Energy Conditions ◽  
Si Substrates ◽  
Cluster Ion Beams ◽  
Cluster Ion ◽  
Sputtering Yield ◽  
Sputtering Yields ◽  
Good Agreement

AbstractAr cluster ions in the size range 1000�16000 atoms/cluster were irradiated onto Si substrates at incident energies of 10 and 20 keV and the sputtering yields were measured. Incident cluster ions were size-selected by using the time-of-flight (TOF) method. The sputtering yield was calculated from the sputtered Si volume and irradiation dose. It was found that the sputtering yields decreased with increasing incident cluster size under the same incident energy conditions. The integrated sputtering yields calculated from the sputtering yields measured for each size of Ar cluster ions, as well as the cluster size distributions, were in good agreement with experimental results obtained with nonselected Ar cluster ion beams.

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