High program efficiency of p-type floating gate in n-channel split-gate embedded flash memory

2008 ◽  
Vol 93 (21) ◽  
pp. 213503 ◽  
Author(s):  
Hung-Sheng Shih ◽  
Shang-Wei Fang ◽  
An-Chi Kang ◽  
Ya-Chin King ◽  
Chrong-Jung Lin
Keyword(s):  
Flash Memory ◽  
Floating Gate ◽  
Program Efficiency ◽  
P Type ◽  
Embedded Flash

P-Type Floating Gate for Retention and P/E Window Improvement of Flash Memory Devices

2007 ◽  
Vol 54 (8) ◽  
pp. 1910-1917 ◽  
Author(s):  
Chen Shen ◽  
Jing Pu ◽  
Ming-Fu Li ◽  
Byung Jin Cho
Keyword(s):  
Flash Memory ◽  
Floating Gate ◽  
Memory Devices ◽  
P Type

Effects of abnormal cell-to-cell interference on p-type floating gate and control gate NAND flash memory

2014 ◽  
Vol 53 (4S) ◽  
pp. 04ED12 ◽  
Author(s):  
Yong Jun Kim ◽  
Jun Geun Kang ◽  
Byungin Lee ◽  
Gyu-Seog Cho ◽  
Sung-Kye Park ◽  
...  
Keyword(s):  
Flash Memory ◽  
Floating Gate ◽  
Nand Flash ◽  
Nand Flash Memory ◽  
Abnormal Cell ◽  
P Type ◽  
And Control

Characterizing Gate Disturb Embedded Flash Memory Cells by Atomic Force Probing

2010 ◽  
Author(s):  
M. Hoffmann ◽  
C. Nowak ◽  
A. Haase ◽  
S. Eckl
Keyword(s):  
Flash Memory ◽  
Failure Mechanisms ◽  
Floating Gate ◽  
Hot Electrons ◽  
Memory Cells ◽  
Main Root ◽  
Atomic Force ◽  
Test Algorithm ◽  
Embedded Flash

Abstract There are two known failure mechanisms that cause Gate Disturb failures in flash devices. One main electrically classified failure is the Gate Disturb failure. A second mechanism is the Floating Gate charging caused by high energetic electrons, so-called channel hot electrons, jumping above the energetic barrier of tunnel oxide. This paper describes the characterization of a single transistor Flash cell with the nano-probing approach and introduces a test algorithm to distinguish between these mechanisms at a Gate Disturb affected Flash cell. A Keithley parameter analyzer in combination with Atomic Force Probing (AFP) has been used for the Flash cell device characterization. A Gate Disturb defect can be induced by different defect mechanisms. Two of them, TRAP's in tunnel oxide and channel hot electrons as a result of leaky PN-junctions, were identified as the main root causes. These mechanisms can be distinguished by AFP-analysis with the tests presented in the paper.

Carrier Profiling of the 10-nm-order Structure in a 3D Flash Memory Cell Using Scanning Nonlinear Dielectric Microscopy

2019 ◽  
Author(s):  
Jun Hirota ◽  
Ken Hoshino ◽  
Tsukasa Nakai ◽  
Kohei Yamasue ◽  
Yasuo Cho
Keyword(s):  
Spatial Resolution ◽  
Flash Memory ◽  
Analytical Techniques ◽  
Memory Cell ◽  
Memory Device ◽  
Floating Gate ◽  
Order Structure ◽  
Carrier Distribution ◽  
Nonlinear Dielectric ◽  
Flash Memory Cell

Abstract In this paper, the authors report their successful attempt to acquire the scanning nonlinear dielectric microscopy (SNDM) signals around the floating gate and channel structures of the 3D Flash memory device, utilizing the custom-built SNDM tool with a super-sharp diamond tip. The report includes details of the SNDM measurement and process involved in sample preparation. With the super-sharp diamond tips with radius of less than 5 nm to achieve the supreme spatial resolution, the authors successfully obtained the SNDM signals of floating gate in high contrast to the background in the selected areas. They deduced the minimum spatial resolution and seized a clear evidence that the diffusion length differences of the n-type impurity among the channels are less than 21 nm. Thus, they concluded that SNDM is one of the most powerful analytical techniques to evaluate the carrier distribution in the superfine three dimensionally structured memory devices.

scholarly journals Multifunctional molybdenum disulfide flash memory using a PEDOT:PSS floating gate

2021 ◽  
Vol 13 (1) ◽  
Author(s):  
Seongin Hong ◽  
Junwoo Park ◽  
Jung Joon Lee ◽  
Sunjong Lee ◽  
Kyungho Yun ◽  
...  
Keyword(s):  
Molybdenum Disulfide ◽  
Flash Memory ◽  
Floating Gate ◽  
Bending Test ◽  
Light Illumination ◽  
Transition Metal Dichalcogenide ◽  
Large Memory ◽  
Temperature Solution ◽  
Multilevel Memory ◽  
Floating Layer

AbstractTwo-dimensional transition metal dichalcogenide materials (TMDs), such as molybdenum disulfide (MoS2), have been considered promising candidates for future electronic applications owing to their electrical, mechanical, and optical properties. Here, we present a new concept for multifunctional MoS2 flash memory by combining a MoS2 channel with a PEDOT:PSS floating layer. The proposed MoS2 memory devices exhibit a switching ratio as high as 2.3 × 107, a large memory window (54.6 ± 7.80 V), and high endurance (>1,000 cycles). As the PEDOT:PSS film enables a low-temperature solution-coating process and mechanical flexibility, the proposed P-memory can be embedded on a polyimide substrate over a rigid silicon substrate, offering high mechanical endurance (over 1,000 cycle bending test). Furthermore, both MoS2 and PEDOT:PSS have a bandgap that is desirable in optoelectronic memory operation, where charge carriers are stored differently in the floating gate depending on light illumination. As a new application that combines photodiodes and memory functions, we demonstrate multilevel memory programming based on light intensity and color.

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