High hole concentration in Mg-doped a-plane Ga1−xInxN (0

2008 ◽  
Vol 93 (18) ◽  
pp. 182108 ◽  
Author(s):  
Daisuke Iida ◽  
Motoaki Iwaya ◽  
Satoshi Kamiyama ◽  
Hiroshi Amano ◽  
Isamu Akasaki
Keyword(s):  
Vapor Phase ◽  
Sapphire Substrate ◽  
Hole Concentration ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
High Hole Concentration ◽  
Mg Doped

Substrate misorientation induced strong increase in the hole concentration in Mg doped GaN grown by metalorganic vapor phase epitaxy

2008 ◽  
Vol 93 (17) ◽  
pp. 172117 ◽  
Author(s):  
T. Suski ◽  
E. Litwin-Staszewska ◽  
R. Piotrzkowski ◽  
R. Czernecki ◽  
M. Krysko ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Hole Concentration ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Strong Increase ◽  
Mg Doped

AlN and AlGaN by MOVPE for UV Light Emitting Devices

2008 ◽  
Vol 590 ◽  
pp. 175-210 ◽  
Author(s):  
Hiroshi Amano ◽  
Masataka Imura ◽  
Motoaki Iwaya ◽  
Satoshi Kamiyama ◽  
Isamu Akasaki
Keyword(s):  
Vapor Phase ◽  
High Efficiency ◽  
Uv Light ◽  
Hole Concentration ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
High Hole Concentration ◽  
P Type

The fundamental growth issues of AlN and AlGaN on sapphire and SiC using metalorganic vapor phase epitaxy, particularly the growth of AlN and AlGaN on a groove-patterned template are reviewed. In addition, the conductivity control of AlGaN is shown. The conductivity control of p-type AlGaN, particularly the realization of a high hole concentration, is essential for realizing high-efficiency UV and DUV LEDs and LDs.

Metalorganic Vapor Phase Epitaxy of Thick InGaN on Sapphire Substrate

1997 ◽  
Vol 36 (Part 1, No. 6A) ◽  
pp. 3381-3384 ◽  
Author(s):  
Masaya Shimizu ◽  
Yasutoshi Kawaguchi ◽  
Kazumasa Hiramatsu ◽  
Nobuhiko Sawaki
Keyword(s):  
Vapor Phase ◽  
Sapphire Substrate ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy

Growth of hexagonal boron nitride on sapphire substrate by pulsed-mode metalorganic vapor phase epitaxy

2018 ◽  
Vol 482 ◽  
pp. 1-8 ◽  
Author(s):  
Xu Yang ◽  
Shugo Nitta ◽  
Kentaro Nagamatsu ◽  
Si-Young Bae ◽  
Ho-Jun Lee ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Vapor Phase ◽  
Sapphire Substrate ◽  
Hexagonal Boron Nitride ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Pulsed Mode

Compensation effect of Mg-doped a- and c-plane GaN films grown by metalorganic vapor phase epitaxy

2010 ◽  
Vol 312 (21) ◽  
pp. 3131-3135 ◽  
Author(s):  
Daisuke Iida ◽  
Kenta Tamura ◽  
Motoaki Iwaya ◽  
Satoshi Kamiyama ◽  
Hiroshi Amano ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Compensation Effect ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Mg Doped

scholarly journals High-quality single crystalline NiO with twin phases grown on sapphire substrate by metalorganic vapor phase epitaxy

AIP Advances ◽  
2012 ◽  
Vol 2 (4) ◽  
pp. 042154 ◽  
Author(s):  
Kazuo Uchida ◽  
Ken-ichi Yoshida ◽  
Dongyuan Zhang ◽  
Atsushi Koizumi ◽  
Shinji Nozaki
Keyword(s):  
Vapor Phase ◽  
Sapphire Substrate ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
High Quality ◽  
Single Crystalline

Metalorganic vapor phase epitaxy growth and characteristics of Mg-doped GaN using GaN substrates

1994 ◽  
Vol 145 (1-4) ◽  
pp. 192-196 ◽  
Author(s):  
T. Detchprohm ◽  
K. Hiramatsu ◽  
N. Sawaki ◽  
I. Akasaki
Keyword(s):  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Mg Doped

Direct Growth ofa-Plane GaN onr-Plane Sapphire Substrate by Metalorganic Vapor Phase Epitaxy

2007 ◽  
Vol 46 (2) ◽  
pp. 555-559 ◽  
Author(s):  
Masahiro Araki ◽  
Noriaki Mochimizo ◽  
Katsuyuki Hoshino ◽  
Kazuyuki Tadatomo
Keyword(s):  
Vapor Phase ◽  
Sapphire Substrate ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Direct Growth
Sign in / Sign up

Export Citation Format

Share Document