Substrate misorientation induced strong increase in the hole concentration in Mg doped GaN grown by metalorganic vapor phase epitaxy

2008 ◽  
Vol 93 (17) ◽  
pp. 172117 ◽  
Author(s):  
T. Suski ◽  
E. Litwin-Staszewska ◽  
R. Piotrzkowski ◽  
R. Czernecki ◽  
M. Krysko ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Hole Concentration ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Strong Increase ◽  
Mg Doped

High hole concentration in Mg-doped a-plane Ga1−xInxN (0

2008 ◽  
Vol 93 (18) ◽  
pp. 182108 ◽  
Author(s):  
Daisuke Iida ◽  
Motoaki Iwaya ◽  
Satoshi Kamiyama ◽  
Hiroshi Amano ◽  
Isamu Akasaki
Keyword(s):  
Vapor Phase ◽  
Sapphire Substrate ◽  
Hole Concentration ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
High Hole Concentration ◽  
Mg Doped

Compensation effect of Mg-doped a- and c-plane GaN films grown by metalorganic vapor phase epitaxy

2010 ◽  
Vol 312 (21) ◽  
pp. 3131-3135 ◽  
Author(s):  
Daisuke Iida ◽  
Kenta Tamura ◽  
Motoaki Iwaya ◽  
Satoshi Kamiyama ◽  
Hiroshi Amano ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Compensation Effect ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Mg Doped

Metalorganic vapor phase epitaxy growth and characteristics of Mg-doped GaN using GaN substrates

1994 ◽  
Vol 145 (1-4) ◽  
pp. 192-196 ◽  
Author(s):  
T. Detchprohm ◽  
K. Hiramatsu ◽  
N. Sawaki ◽  
I. Akasaki
Keyword(s):  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Mg Doped

Effects of Mg/Ga and V/III source ratios on hole concentration of N-polar $(000\bar{1})$ p-type GaN grown by metalorganic vapor phase epitaxy

2016 ◽  
Vol 55 (5S) ◽  
pp. 05FE01 ◽  
Author(s):  
Ryohei Nonoda ◽  
Kanako Shojiki ◽  
Tomoyuki Tanikawa ◽  
Shigeyuki Kuboya ◽  
Ryuji Katayama ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Hole Concentration ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
P Type

p‐type conduction in Mg‐doped GaN and Al0.08Ga0.92N grown by metalorganic vapor phase epitaxy

1994 ◽  
Vol 65 (5) ◽  
pp. 593-594 ◽  
Author(s):  
T. Tanaka ◽  
A. Watanabe ◽  
H. Amano ◽  
Y. Kobayashi ◽  
I. Akasaki ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
P Type ◽  
Type Conduction ◽  
Mg Doped

Hole trap levels in Mg-doped GaN grown by metalorganic vapor phase epitaxy

1998 ◽  
Vol 73 (14) ◽  
pp. 2024-2026 ◽  
Author(s):  
H. Nagai ◽  
Q. S. Zhu ◽  
Y. Kawaguchi ◽  
K. Hiramatsu ◽  
N. Sawaki
Keyword(s):  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Hole Trap ◽  
Mg Doped ◽  
Trap Levels
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