High quality ultraviolet AlGaN∕GaN multiple quantum wells with atomic layer deposition grown AlGaN barriers

2008 ◽  
Vol 93 (13) ◽  
pp. 131116 ◽  
Author(s):  
Zhen-Yu Li ◽  
Ming-Hua Lo ◽  
C. T. Hung ◽  
Shih-Wei Chen ◽  
Tien-Chang Lu ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Quantum Wells ◽  
Atomic Layer ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
High Quality ◽  
Layer Deposition

Optical characterization of type-II ZnO/ZnS multiple quantum wells grown by atomic layer deposition

2020 ◽  
Vol 694 ◽  
pp. 137740 ◽  
Author(s):  
Mostafa Afifi Hassan ◽  
Aadil Waseem ◽  
Muhammad Ali Johar ◽  
Sou Young Yu ◽  
June Key Lee ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Quantum Wells ◽  
Atomic Layer ◽  
Optical Characterization ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Type Ii ◽  
Layer Deposition

AlGaN/GaN multiple quantum wells grown by atomic-layer deposition

2008 ◽  
Author(s):  
M. H. Lo ◽  
Z. Y. Li ◽  
J. R. Chen ◽  
T. S. Ko ◽  
T. C. Lu ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Quantum Wells ◽  
Atomic Layer ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Layer Deposition

AlGaN/GaN multiple quantum wells grown by using atomic layer deposition technique

2008 ◽  
Vol 1068 ◽  
Author(s):  
Ming-Hua Lo ◽  
Zhen-Yu Li ◽  
Shih-Wei Chen ◽  
Jhih-Cang Hong ◽  
Ting-Chang Lu ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Quantum Wells ◽  
Atomic Layer ◽  
Atomic Force Microscope Image ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
X Ray Diffraction ◽  
Atomic Force ◽  
Transmission Electron ◽  
Layer Deposition

ABSTRACTIn this work, we report on the growth of ultraviolet (UV) AlGaN/GaN multiple quantum wells (MQWs) structure using atomic layer deposition (ALD) technique. The AlGaN/GaN MQW sample grown on the sapphire substrate consisted of three GaN QWs and four AlGaN barriers comprised AlN/GaN superlattices (SLs). The root-mean-square value of the surface morphology was only 0.35 nm observed from the atomic force microscope image and no crack was found on the surface. Both of the high resolution X-ray diffraction curves and transmission electron microscope images showed sharp interfaces between SLs layers and QWs with good periodicity. These results demonstrate that the ALD could be a very useful technique for controlling the crystalline quality and thickness of the III-nitride epilayer.

Scanning tunneling spectroscopy of lead sulfide quantum wells fabricated by atomic layer deposition

2010 ◽  
Vol 21 (48) ◽  
pp. 485402 ◽  
Author(s):  
Wonyoung Lee ◽  
Neil P Dasgupta ◽  
Hee Joon Jung ◽  
Jung-Rok Lee ◽  
Robert Sinclair ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Quantum Wells ◽  
Lead Sulfide ◽  
Atomic Layer ◽  
Scanning Tunneling Spectroscopy ◽  
Tunneling Spectroscopy ◽  
Scanning Tunneling ◽  
Layer Deposition

scholarly journals Direct Epitaxial Nanometer-Thin InN of High Structural Quality on 4H-SiC by Atomic Layer Deposition

2020 ◽  
Author(s):  
Chih-Wei Hsu ◽  
Petro Deminskyi ◽  
Ivan Martinovic ◽  
Ivan G. Ivanov ◽  
Justinas Palisaitis ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Indium Nitride ◽  
Atomic Layer ◽  
Structural Quality ◽  
High Electron ◽  
X Ray Diffraction ◽  
High Quality ◽  
Subsequent Formation ◽  
Transmission Electron ◽  
Layer Deposition

<div>Indium nitride (InN) is a highly promising material for high frequency electronics given its</div><div>low band gap and high electron mobility. The development of InN-based devices is hampered</div><div>by the limitations in depositing very thin InN films of high quality. We demonstrate growth of</div><div>high-structural-quality nanometer thin InN films on 4H-SiC by atomic layer deposition (ALD).</div><div>High resolution X-ray diffraction and transmission electron microscopy show epitaxial growth</div><div>and an atomically sharp interface between InN and 4H-SiC. The InN film is fully relaxed already after a few atomic layers and shows a very smooth morphology where the low surface</div><div>roughness (0.14 nm) is found to reproduced sub-nanometer surface features of the substrate. Raman measurements show an asymmetric broadening caused by grains in the InN film. Our results show the potential of ALD to prepare high quality nanometer-thin InN films for subsequent formation of heterojunctions.</div>

High-quality slot waveguide ring resonator based on atomic layer deposition

2015 ◽  
Author(s):  
A. Autere ◽  
L. Karvonen ◽  
A. Säynätjoki ◽  
M. Roussey ◽  
E. Färm ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Ring Resonator ◽  
Atomic Layer ◽  
Slot Waveguide ◽  
High Quality ◽  
Layer Deposition ◽  
Waveguide Ring

Epitaxy of High-Quality Single-Crystal Hexagonal Perovskite YAlO3 on GaAs(111)A Using Laminated Atomic Layer Deposition

2019 ◽  
Vol 19 (4) ◽  
pp. 2030-2036 ◽  
Author(s):  
Lawrence Boyu Young ◽  
Chao-Kai Cheng ◽  
Keng-Yung Lin ◽  
Yen-Hsun Lin ◽  
Hsien-Wen Wan ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Single Crystal ◽  
Atomic Layer ◽  
High Quality ◽  
High Quality Single Crystal ◽  
Layer Deposition
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