scholarly journals Comparison of the transport properties of high quality AlGaN/AlN/GaN and AlInN/AlN/GaN two-dimensional electron gas heterostructures

2009 ◽  
Vol 105 (1) ◽  
pp. 013707 ◽  
Author(s):  
Remziye Tülek ◽  
Aykut Ilgaz ◽  
Sibel Gökden ◽  
Ali Teke ◽  
Mustafa K. Öztürk ◽  
...  
Keyword(s):  
Transport Properties ◽  
Electron Gas ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
High Quality ◽  
Dimensional Electron Gas

scholarly journals Formation of a high quality two‐dimensional electron gas on cleaved GaAs

1990 ◽  
Vol 56 (17) ◽  
pp. 1697-1699 ◽  
Author(s):  
Loren Pfeiffer ◽  
K. W. West ◽  
H. L. Stormer ◽  
J. P. Eisenstein ◽  
K. W. Baldwin ◽  
...  
Keyword(s):  
Electron Gas ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
High Quality ◽  
Dimensional Electron Gas

Two-Dimensional Electron Gas Transport Properties in AlGaN/(In)GaN/AlGaN Double-Heterostructure Field Effect Transistors

1999 ◽  
Vol 595 ◽  
Author(s):  
Narihiko Maeda ◽  
Tadashi Saitoh ◽  
Kotaro Tsubaki ◽  
Toshio Nishida ◽  
Naoki Kobayashi
Keyword(s):  
Transport Properties ◽  
Field Effect ◽  
Electron Gas ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Double Heterostructure ◽  
Gas Transport Properties ◽  
Double Heterostructures ◽  
Dimensional Electron Gas

Two-dimensional electron gas transport properties have been investigated in nitride double-heterostructures. A striking effect has been observed that the two-dimensional electron gas mobility has been drastically enhanced in the AlGaN/GaN/AlGaN doubleheterostructure, compared with that in the conventional AlGaN/GaN singleheterostructure. The observed mobility enhancement has been shown to be mainly due to the enhanced polarization-induced electron confinement in the double-heterostructure, and additionally due to the improvement of the interface roughness in the structure. Device operation of an AlGaN/GaN/AlGaN double-heterostructure field effect transistor has been demonstrated: a maximum transconductance of 180 mS/mm has been obtained for a 0.4 mm-gate-length device. In the double-heterostructure using InGaN channel, the increased capacity for the two-dimensional electron gas has been observed. The AlGaN/(In)GaN/AlGaN double-heterostructures are effective for improving the electron transport properties.

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