scholarly journals Formation of a high quality two‐dimensional electron gas on cleaved GaAs

1990 ◽  
Vol 56 (17) ◽  
pp. 1697-1699 ◽  
Author(s):  
Loren Pfeiffer ◽  
K. W. West ◽  
H. L. Stormer ◽  
J. P. Eisenstein ◽  
K. W. Baldwin ◽  
...  
Keyword(s):  
Electron Gas ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
High Quality ◽  
Dimensional Electron Gas

High-quality two-dimensional electron gas at large scale GaN/AlGaN wafer interface prepared by mass production MOCVD systems

2005 ◽  
Vol 133 (10) ◽  
pp. 647-649 ◽  
Author(s):  
Syoji Yamada ◽  
Takashi Ohnishi ◽  
Tomoyasu Kakegawa ◽  
Masashi Akabori ◽  
Toshi-kazu Suzuki ◽  
...  
Keyword(s):  
Mass Production ◽  
Large Scale ◽  
Electron Gas ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
High Quality ◽  
Dimensional Electron Gas

scholarly journals Resistively detected high-order magnetoplasmons in a high-quality two-dimensional electron gas

2016 ◽  
Vol 93 (16) ◽  
Author(s):  
Q. Shi ◽  
M. A. Zudov ◽  
L. N. Pfeiffer ◽  
K. W. West ◽  
J. D. Watson ◽  
...  
Keyword(s):  
Electron Gas ◽  
High Order ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
High Quality ◽  
Dimensional Electron Gas

Intrinsic Mobility Limits of a Two-Dimensional Electron Gas in AlGaN/GaN Heterostructures

1996 ◽  
Vol 449 ◽  
Author(s):  
W. Walukiewicz ◽  
L. Hsu ◽  
J. M. Redwing
Keyword(s):  
Low Temperature ◽  
Theoretical Study ◽  
Electron Gas ◽  
Two Dimensional ◽  
Optical Phonons ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
High Quality ◽  
Structure Comparison ◽  
Dimensional Electron Gas

ABSTRACTWe present the results of a theoretical study of the 2D electron gas mobility at a AlxGa1−xN/GaN heterointerface. All standard mechanisms, including scattering by acoustic and optical phonons, and remote and background (residual) impurities have been included in our calculation of theoretical mobility limits in a AlxGa1−xN/GaN structure. Comparison of calculations with experimental mobilities obtained from high quality MOCVD grown Al0.15Ga0.85N/GaN heterostructures shows that the low temperature mobility in these samples is dominated by scattering from ionized impurities, with a smaller contribution from acoustic phonons.

scholarly journals Comparison of the transport properties of high quality AlGaN/AlN/GaN and AlInN/AlN/GaN two-dimensional electron gas heterostructures

2009 ◽  
Vol 105 (1) ◽  
pp. 013707 ◽  
Author(s):  
Remziye Tülek ◽  
Aykut Ilgaz ◽  
Sibel Gökden ◽  
Ali Teke ◽  
Mustafa K. Öztürk ◽  
...  
Keyword(s):  
Transport Properties ◽  
Electron Gas ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
High Quality ◽  
Dimensional Electron Gas
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