Erratum: “Optical properties of nearly stacking-fault-free m-plane GaN homoepitaxial films grown by metal organic vapor phase epitaxy on low defect density free-standing GaN substrates” [Appl. Phys. Lett. 92, 091912 (2008)]

2008 ◽  
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H. Yamaguchi ◽  
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2000 ◽  
Vol 76 (7) ◽  
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