Erratum: “Optical properties of nearly stacking-fault-free m-plane GaN homoepitaxial films grown by metal organic vapor phase epitaxy on low defect density free-standing GaN substrates” [Appl. Phys. Lett. 92, 091912 (2008)]
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2019 ◽
Vol 58
(SC)
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pp. SCCB24
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2018 ◽
Vol 215
(21)
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pp. 1800282
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2004 ◽
Vol 23
(3-4)
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pp. 305-308
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2006 ◽
Vol 24
(3)
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pp. 591-594
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