Optical properties of nearly stacking-fault-free m-plane GaN homoepitaxial films grown by metal organic vapor phase epitaxy on low defect density freestanding GaN substrates

2008 ◽  
Vol 92 (9) ◽  
pp. 091912 ◽  
Author(s):  
S. F. Chichibu ◽  
H. Yamaguchi ◽  
L. Zhao ◽  
M. Kubota ◽  
K. Okamoto ◽  
...  
Keyword(s):  
Optical Properties ◽  
Vapor Phase ◽  
Defect Density ◽  
Vapor Phase Epitaxy ◽  
Stacking Fault ◽  
Organic Vapor ◽  
Metal Organic

scholarly journals Optical Properties Of Metastable Shallow Acceptors In Mg-Doped GaN Layers Grown By Metal-Organic Vapor Phase Epitaxy

2010 ◽  
Author(s):  
G. Pozina ◽  
C. Hemmingsson ◽  
J. P. Bergman ◽  
T. Kawashima ◽  
H. Amano ◽  
...  
Keyword(s):  
Optical Properties ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Organic Vapor ◽  
Metal Organic ◽  
Shallow Acceptors ◽  
Mg Doped

Effect of Boron Incorporation on Structural and Optical Properties of AlN Layers Grown by Metal-Organic Vapor Phase Epitaxy

2018 ◽  
Vol 215 (21) ◽  
pp. 1800282 ◽  
Author(s):  
Masataka Imura ◽  
Yuichi Ota ◽  
Ryan G. Banal ◽  
Meiyong Liao ◽  
Yoshiko Nakayama ◽  
...  
Keyword(s):  
Optical Properties ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Structural And Optical Properties ◽  
Organic Vapor ◽  
Metal Organic

(Invited) Selective-Area Metal Organic Vapor-Phase Epitaxy of III-V on Si: What About Defect Density?

2014 ◽  
Vol 64 (6) ◽  
pp. 513-521 ◽  
Author(s):  
C. Merckling ◽  
N. Waldron ◽  
S. Jiang ◽  
W. Guo ◽  
K. Barla ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Defect Density ◽  
Vapor Phase Epitaxy ◽  
Organic Vapor ◽  
Selective Area ◽  
Metal Organic

Anomalous features in the optical properties of Al1−xInxN on GaN grown by metal organic vapor phase epitaxy

2000 ◽  
Vol 76 (7) ◽  
pp. 876-878 ◽  
Author(s):  
Shigeo Yamaguchi ◽  
Michihiko Kariya ◽  
Shugo Nitta ◽  
Tetsuya Takeuchi ◽  
Christian Wetzel ◽  
...  
Keyword(s):  
Optical Properties ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Organic Vapor ◽  
Metal Organic

Selective Growth of GaP on Si by Metal Organic Vapor Phase Epitaxy

1995 ◽  
Vol 417 ◽  
Author(s):  
J. S. Lee ◽  
J. Salzman ◽  
D. Emerson ◽  
J. R. Shealy ◽  
J. M. Ballantyne
Keyword(s):  
Vapor Phase ◽  
Defect Density ◽  
Vapor Phase Epitaxy ◽  
Gradual Transition ◽  
Large Defect ◽  
Si Substrates ◽  
Organic Vapor ◽  
Micro Raman Spectroscopy ◽  
High Resolution Tem ◽  
Metal Organic

AbstractExtremely flat layers of GaP were grown on 4° miscut (100) Si substrates by selective Metal- Organic Vapor Phase Epitaxy. An enhancement of Re@3 was measured at the growth edges, which corresponds to a Sherwood number of 12.5. Defect-free growth is obtained at the edge of the silicon nitride mask. A gradual transition to growth with a large defect density is observed with increasing distance from the mask edges. In the defect free areas, a recovery of the (100) crystal plane is consistently measured on top of the grown mesas. This seems to indicate a pure layer-bylayer homoepitaxial mode (Frank-van der Merve mode) after the island mode nucleation (Volmer- Weber mode) on Silicon is completed, forming a thin smooth seed layer. High Resolution TEM shows a uniform Si-GaP transition. Micro-Raman Spectroscopy with spatial resolution of ˜1 micrometer was performed to assess the crystal quality as a function of the distance from the growth edge.

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