Experimental off-axis electron holography of focused ion beam-prepared Si p-n junctions with different dopant concentrations

2008 ◽  
Vol 104 (6) ◽  
pp. 064513 ◽  
Author(s):  
David Cooper ◽  
Cyril Ailliot ◽  
Robert Truche ◽  
Jean-Paul Barnes ◽  
Jean-Michel Hartmann ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Electron Holography

Phase-Shifting Electron Holography for Accurate Measurement of Potential Distributions in Organic and Inorganic Semiconductors

Microscopy ◽  
2020 ◽  
Author(s):  
Kazuo Yamamoto ◽  
Satoshi Anada ◽  
Takeshi Sato ◽  
Noriyuki Yoshimoto ◽  
Tsukasa Hirayama
Keyword(s):  
High Performance ◽  
Focused Ion Beam ◽  
Phase Measurement ◽  
Ion Beam ◽  
Functional Materials ◽  
Phase Shifting ◽  
Future Research ◽  
Electron Holography ◽  
Preparation Technique ◽  
Inorganic Semiconductors

Abstract Phase-shifting electron holography (PS-EH) is an interference transmission electron microscopy technique that accurately visualizes potential distributions in functional materials, such as semiconductors. In this paper, we briefly introduce the features of the PS-EH that overcome some of the issues facing the conventional EH based on Fourier transformation. Then, we present a high-precision PS-EH technique with multiple electron biprisms and a sample preparation technique using a cryo-focused-ion-beam, which are important techniques for the accurate phase measurement of semiconductors. We present several applications of PS-EH to demonstrate the potential in organic and inorganic semiconductors and then discuss the differences by comparing them with previous reports on the conventional EH. We show that in situ biasing PS-EH was able to observe not only electric potential distribution but also electric field and charge density at a GaAs p-n junction and clarify how local band structures, depletion layer widths, and space charges changed depending on the biasing conditions. Moreover, the PS-EH clearly visualized the local potential distributions of two-dimensional electron gas (2DEG) layers formed at AlGaN/GaN interfaces with different Al compositions. We also report the results of our PS-EH application for organic electroluminescence (OEL) multilayers and point out the significant potential changes in the layers. The proposed PS-EH enables more precise phase measurement compared to the conventional EH, and our findings introduced in this paper will contribute to the future research and development of high-performance semiconductor materials and devices.

Quantitative off-axis electron holography of GaAsp-njunctions prepared by focused ion beam milling

2009 ◽  
Vol 233 (1) ◽  
pp. 102-113 ◽  
Author(s):  
D. COOPER ◽  
R. TRUCHE ◽  
A.C. TWITCHETT-HARRISON ◽  
R.E. DUNIN-BORKOWSKI ◽  
P.A. MIDGLEY
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Electron Holography ◽  
Focused Ion Beam Milling

Field mapping of focused ion beam prepared semiconductor devices by off-axis and dark field electron holography

2013 ◽  
Vol 28 (12) ◽  
pp. 125013 ◽  
Author(s):  
David Cooper ◽  
Pierrette Rivallin ◽  
Georges Guegan ◽  
Christophe Plantier ◽  
Eric Robin ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Semiconductor Devices ◽  
Dark Field ◽  
Electron Holography ◽  
Field Mapping ◽  
Field Electron ◽  
Dark Field Electron

Off-axis electron holography of electrostatic potentials in unbiased and reverse biased focused ion beam milled semiconductor devices

2004 ◽  
Vol 214 (3) ◽  
pp. 287-296 ◽  
Author(s):  
A. C. TWITCHETT ◽  
R. E. DUNIN-BORKOWSKI ◽  
R. J. HALLIFAX ◽  
R. F. BROOM ◽  
P. A. MIDGLEY
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Semiconductor Devices ◽  
Electrostatic Potentials ◽  
Electron Holography

Focused-ion-beam preparation of wedge-shaped cross sections and its application to observing p–n junctions by electron holography

2003 ◽  
Vol 21 (5) ◽  
pp. 2155 ◽  
Author(s):  
Zhouguang Wang ◽  
Takeharu Kato ◽  
Tsukasa Hirayama ◽  
Katsuhiro Sasaki ◽  
Hiroyasu Saka ◽  
...  
Keyword(s):  
Cross Sections ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Electron Holography

Visualization of different carrier concentrations in n-type-GaN semiconductors by phase-shifting electron holography with multiple electron biprisms

Microscopy ◽  
2019 ◽  
Vol 69 (1) ◽  
pp. 1-10 ◽  
Author(s):  
Kazuo Yamamoto ◽  
Kiyotaka Nakano ◽  
Atsushi Tanaka ◽  
Yoshio Honda ◽  
Yuto Ando ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Phase Shifting ◽  
Active Layer Thickness ◽  
Electron Holography ◽  
Wide Field ◽  
Transmission Electron ◽  
Dopant Level ◽  
Phase Profile ◽  
Phase Resolution

Abstract Phase-shifting electron holography (PS-EH) using a transmission electron microscope (TEM) was applied to visualize layers with different concentrations of carriers activated by Si (at dopant levels of 1019, 1018, 1017 and 1016 atoms cm−3) in n-type GaN semiconductors. To precisely measure the reconstructed phase profiles in the GaN sample, three electron biprisms were used to obtain a series of high-contrast holograms without Fresnel fringes generated by a biprism filament, and a cryo-focused-ion-beam (cryo-FIB) was used to prepare a uniform TEM sample with less distortion in the wide field of view. All layers in a 350-nm-thick TEM sample were distinguished with 1.8-nm spatial resolution and 0.02-rad phase-resolution, and variations of step width in the phase profile (corresponding to depletion width) at the interfaces between the layers were also measured. Thicknesses of the active and inactive layers at each dopant level were estimated from the observed phase profile and the simulation of theoretical band structure. Ratio of active-layer thickness to total thickness of the TEM sample significantly decreased as dopant concentration decreased; thus, a thicker TEM sample is necessary to visualize lower carrier concentrations; for example, to distinguish layers with dopant concentrations of 1016 and 1015 atoms cm−3. It was estimated that sample thickness must be more than 700 nm to make it be possible to detect sub-layers by the combination of PS-EH and cryo-FIB.

Focused ion beam specimen preparation for off-axis electron holography using Si, Ga, and Au ions

2008 ◽  
Vol 93 (4) ◽  
pp. 043510 ◽  
Author(s):  
David Cooper ◽  
Francois Bertin ◽  
Phillipe Salles ◽  
Gerard Benassayag
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Beam Specimen ◽  
Specimen Preparation ◽  
Electron Holography

Characterizing an implanted Si/Si p–n junction with lower doping level by combined electron holography and focused-ion-beam milling

2002 ◽  
Vol 81 (3) ◽  
pp. 478-480 ◽  
Author(s):  
Zhouguang Wang ◽  
Takeharu Kato ◽  
Noriyoshi Shibata ◽  
Tsukasa Hirayama ◽  
Naoko Kato ◽  
...  
Keyword(s):  
Doping Level ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Electron Holography ◽  
Focused Ion Beam Milling
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