Focused ion beam specimen preparation for off-axis electron holography using Si, Ga, and Au ions

2008 ◽  
Vol 93 (4) ◽  
pp. 043510 ◽  
Author(s):  
David Cooper ◽  
Francois Bertin ◽  
Phillipe Salles ◽  
Gerard Benassayag
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Beam Specimen ◽  
Specimen Preparation ◽  
Electron Holography

scholarly journals Laser-assisted atom probe tomography of semiconductors: The impact of the focused-ion beam specimen preparation

2018 ◽  
Vol 188 ◽  
pp. 19-23 ◽  
Author(s):  
J. Bogdanowicz ◽  
A. Kumar ◽  
C. Fleischmann ◽  
M. Gilbert ◽  
J. Houard ◽  
...  
Keyword(s):  
Atom Probe Tomography ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Atom Probe ◽  
Beam Specimen ◽  
Specimen Preparation ◽  
The Impact

High-Quality Sample Preparation by Low kV FIB Thinning for Analytical TEM Measurements

2007 ◽  
Vol 13 (2) ◽  
pp. 80-86 ◽  
Author(s):  
Sara Bals ◽  
Wim Tirry ◽  
Remco Geurts ◽  
Zhiqing Yang ◽  
Dominique Schryvers
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Beam Specimen ◽  
Specimen Preparation ◽  
Ion Milling ◽  
High Quality ◽  
Transmission Electron ◽  
Quantitative Manner

Focused ion beam specimen preparation has been used for NiTi samples and SrTiO3/SrRuO3 multilayers with prevention of surface amorphization and Ga implantation by a 2-kV cleaning procedure. Transmission electron microscopy techniques show that the samples are of high quality with a controlled thickness over large scales. Furthermore, preferential thinning effects in multicompounds are avoided, which is important when analytical transmission electron microscopy measurements need to be interpreted in a quantitative manner. The results are compared to similar measurements acquired for samples obtained using conventional preparation techniques such as electropolishing for alloys and ion milling for oxides.

scholarly journals A Small Spot, Inert Gas, Ion Milling Process as a Complementary Technique to Focused Ion Beam Specimen Preparation

2017 ◽  
Vol 23 (4) ◽  
pp. 782-793 ◽  
Author(s):  
Paul E. Fischione ◽  
Robert E.A. Williams ◽  
Arda Genç ◽  
Hamish L. Fraser ◽  
Rafal E. Dunin-Borkowski ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Low Voltage ◽  
Ion Beam ◽  
Small Diameter ◽  
Amorphous Layer ◽  
Substantial Improvement ◽  
Beam Specimen ◽  
Specimen Preparation ◽  
Specimen Thickness ◽  
Ion Milling

AbstractThis paper reports on the substantial improvement of specimen quality by use of a low voltage (0.05 to ~1 keV), small diameter (~1 μm), argon ion beam following initial preparation using conventional broad-beam ion milling or focused ion beam. The specimens show significant reductions in the amorphous layer thickness and implanted artifacts. The targeted ion milling controls the specimen thickness according to the needs of advanced aberration-corrected and/or analytical transmission electron microscopy applications.

Off-Axis Electron Holography of Unbiased and Reverse-Biased Focused Ion Beam Milled Sip-nJunctions

2005 ◽  
Vol 11 (1) ◽  
pp. 66-78 ◽  
Author(s):  
Alison C. Twitchett ◽  
Rafal E. Dunin-Borkowski ◽  
Robert J. Hallifax ◽  
Ronald F. Broom ◽  
Paul A. Midgley
Keyword(s):  
Electrostatic Potential ◽  
Reverse Bias ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Specimen Preparation ◽  
Electron Holography ◽  
Thin Sample ◽  
Transmission Electron ◽  
Milled Sample

Off-axis electron holography is used to measure electrostatic potential profiles across a siliconp-njunction, which has been prepared for examination in the transmission electron microscope (TEM) in two different specimen geometries using focused ion beam (FIB) milling. Results are obtained both from a conventional unbiased FIB-milled sample and using a novel sample geometry that allows a reverse bias to be applied to an FIB-milled samplein situin the TEM. Computer simulations are fitted to the results to assess the effect of TEM specimen preparation on the charge density and the electrostatic potential in the thin sample.

Low Energy Ar Ion Milling of FIB TEM Specimens from 14 nm and Future FinFET Technologies

2018 ◽  
Author(s):  
C.S. Bonifacio ◽  
P. Nowakowski ◽  
M.J. Campin ◽  
M.L. Ray ◽  
P.E. Fischione
Keyword(s):  
Field Effect Transistor ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Specimen Preparation ◽  
Ion Milling ◽  
Transmission Electron ◽  
High Resolution Tem ◽  
Effect Transistor ◽  
20 Nm ◽  
Argon Ion

Abstract Transmission electron microscopy (TEM) specimens are typically prepared using the focused ion beam (FIB) due to its site specificity, and fast and accurate thinning capabilities. However, TEM and high-resolution TEM (HRTEM) analysis may be limited due to the resulting FIB-induced artifacts. This work identifies FIB artifacts and presents the use of argon ion milling for the removal of FIB-induced damage for reproducible TEM specimen preparation of current and future fin field effect transistor (FinFET) technologies. Subsequently, high-quality and electron-transparent TEM specimens of less than 20 nm are obtained.

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