Nanoscale polarization profile across a 180° ferroelectric domain wall extracted by quantitative piezoelectric force microscopy

2008 ◽  
Vol 104 (7) ◽  
pp. 074110 ◽  
Author(s):  
Lili Tian ◽  
Aravind Vasudevarao ◽  
Anna N. Morozovska ◽  
Eugene A. Eliseev ◽  
Sergei V. Kalinin ◽  
...  
Keyword(s):  
Domain Wall ◽  
Ferroelectric Domain ◽  
Force Microscopy ◽  
Polarization Profile ◽  
Piezoelectric Force Microscopy

scholarly journals Effect of the intrinsic width on the piezoelectric force microscopy of a single ferroelectric domain wall

2008 ◽  
Vol 103 (12) ◽  
pp. 124110 ◽  
Author(s):  
Anna N. Morozovska ◽  
Eugene A. Eliseev ◽  
George S. Svechnikov ◽  
Venkatraman Gopalan ◽  
Sergei V. Kalinin
Keyword(s):  
Domain Wall ◽  
Ferroelectric Domain ◽  
Force Microscopy ◽  
Piezoelectric Force Microscopy

Ferroelectric domain-wall logic units

2021 ◽  
Author(s):  
Jing Wang ◽  
Jing Ma ◽  
Houbing Huang ◽  
Ji Ma ◽  
Hasnain Jafri ◽  
...  
Keyword(s):  
Domain Wall ◽  
Electric Field ◽  
Domain Walls ◽  
Logic Gates ◽  
Piezoresponse Force Microscopy ◽  
Ferroelectric Domain ◽  
Conduction Path ◽  
Conductive Atomic Force Microscopy ◽  
Flexible Control ◽  
Force Microscopy

Abstract The electronic conductivities of ferroelectric domain walls have been extensively explored over the past decade for potential nanoelectronic applications. However, the realization of logic devices based on ferroelectric domain walls requires reliable and flexible control of the domain-wall configuration and conduction path. Here, we demonstrate electric-field-controlled stable and repeatable on-and-off switching of conductive domain walls within topologically confined vertex domains naturally formed in self-assembled ferroelectric nano-islands. Using a combination of piezoresponse force microscopy, conductive atomic force microscopy, and phase-field simulations, we show that on-off switching is accomplished through reversible transformations between charged and neutral domain walls via electric-field-controlled domain-wall reconfiguration. By analogy to logic processing, we propose programmable logic gates (such as NOT, OR, AND and their derivatives) and logic circuits (such as fan-out) based on reconfigurable conductive domain walls. Our work provides a potentially viable platform for programmable all-electric logic based on a ferroelectric domain-wall network with low energy consumption.

Local electromechanical properties of ferroelectric materials for piezoelectric applications

2004 ◽  
Vol 838 ◽  
Author(s):  
A. L. Kholkin ◽  
I. K. Bdikin ◽  
V. V. Shvartsman ◽  
A. Orlova ◽  
D. Kiselev ◽  
...  
Keyword(s):  
Domain Wall ◽  
Microelectromechanical Systems ◽  
Ferroelectric Materials ◽  
Electromechanical Properties ◽  
Force Microscopy ◽  
Control Electronics ◽  
Piezoelectric Force Microscopy ◽  
And Control ◽  
Electromechanical Characterization

ABSTRACTLocal electromechanical characterization is becoming prerequisite for the development of ferroelectric-based piezoelectric devices including multilayer actuators, micromotors, piezoelectric filters and, especially, microelectromechanical systems (MEMS), which combine piezoelectric elements and control electronics on the same chip. In this work, we present the results of local electromechanical characterization of several important ferroelectric materials including Pb(Zr, Ti)O3 (PZT) and (Pb, La)(Zr, Ti)O3 (PLZT) in both thin film and ceramic form. Local piezoelectric hysteresis measurements are performed by the piezoelectric force microscopy (PFM) that detects small electric field-induced deformation on the nanoscale e. g., within the single grain of a polycrystalline material. A number of novel phenomena is observed with increasing dc bias voltage including the jump of ferroelectric domain wall to the grain boundary, the “fingerlike” instability of domain wall, and the local phase transition into ferroelectric phase.

scholarly journals Ferroelectric domain wall phonon polarizer

2017 ◽  
Vol 1 (5) ◽  
Author(s):  
Miquel Royo ◽  
Carlos Escorihuela-Sayalero ◽  
Jorge Íñiguez ◽  
Riccardo Rurali
Keyword(s):  
Domain Wall ◽  
Ferroelectric Domain

Three-dimensional ferroelectric domain imaging of epitaxial BiFeO3 thin films using angle-resolved piezoresponse force microscopy

2010 ◽  
Vol 97 (11) ◽  
pp. 112907 ◽  
Author(s):  
Moonkyu Park ◽  
Seungbum Hong ◽  
Jeffrey A. Klug ◽  
Michael J. Bedzyk ◽  
Orlando Auciello ◽  
...  
Keyword(s):  
Thin Films ◽  
Three Dimensional ◽  
Piezoresponse Force Microscopy ◽  
Ferroelectric Domain ◽  
Force Microscopy ◽  
Bifeo3 Thin Films

scholarly journals Effect of oxidizing and reducing atmospheres on Ba(Ti0.90 Zr0.10)o3:2V ceramics as characterized by piezoresponse force microscopy

2011 ◽  
Vol 5 (3) ◽  
pp. 139-147 ◽  
Author(s):  
Francisco Moura ◽  
Alexandre Simões ◽  
Carla Riccardi ◽  
Maria Zaghete ◽  
Jose Varela ◽  
...  
Keyword(s):  
Data Storage ◽  
Photoelectron Spectroscopy ◽  
Ferroelectric Properties ◽  
Piezoresponse Force Microscopy ◽  
Nitrogen Atmosphere ◽  
Ambient Atmosphere ◽  
Practical Applications ◽  
Force Microscopy ◽  
Storage Media ◽  
Piezoelectric Force Microscopy

The effect of annealing atmospheres (Atamb, N2 and O2) on the electrical properties of Ba(Ti0.90Zr0.10 )O3:2V (BZT10:2V) ceramics obtained by the mixed oxide method was investigated. X-ray photoelectron spectroscopy (XPS) analysis indicates that oxygen vacancies present near Zr and Ti ions reduce ferroelectric properties, especially in samples treated in an ambient atmosphere (Atamb ). BZT10:2V ceramics sintered in a nitrogen atmosphere showed better dielectric behaviour at room temperature with a dielectric permittivity measured at a frequency of 10 kHz equal to 16800 with dielectric loss of 0.023. Piezoelectric force microscopy (PFM) images reveal improvement in the piezoelectric coefficient by sintering the sample under nitrogen atmosphere. Thus, BZT10:2V ceramics sintered under a nitrogen atmosphere can be useful for practical applications which include nonvolatile digital memories, spintronics and data-storage media.

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