Bias-stress-induced stretched-exponential time dependence of threshold voltage shift in InGaZnO thin film transistors

2008 ◽  
Vol 93 (9) ◽  
pp. 093504 ◽  
Author(s):  
Jeong-Min Lee ◽  
In-Tak Cho ◽  
Jong-Ho Lee ◽  
Hyuck-In Kwon
Keyword(s):  
Thin Film ◽  
Time Dependence ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Threshold Voltage Shift ◽  
Voltage Shift ◽  
Exponential Time ◽  
Stretched Exponential ◽  
Bias Stress

Local-Degradation-Induced Threshold Voltage Shift in Turned-OFF Amorphous InGaZnO Thin Film Transistors Under AC Drain Bias Stress

2015 ◽  
Vol 36 (6) ◽  
pp. 579-581 ◽  
Author(s):  
Jong In Kim ◽  
In-Tak Cho ◽  
Chan-Yong Jeong ◽  
Daeun Lee ◽  
Hyuck-In Kwon ◽  
...  
Keyword(s):  
Thin Film ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Threshold Voltage Shift ◽  
Voltage Shift ◽  
Bias Stress ◽  
Drain Bias ◽  
Amorphous Ingazno

DC and AC Gate-Bias Stability of Nanocrystalline Silicon Thin-Film Transistors Made on Colorless Polyimide Foil Substrates

2011 ◽  
Vol 1321 ◽  
Author(s):  
I-Chung Chiu ◽  
I-Chun Cheng ◽  
Jian Z. Chen ◽  
Jung-Jie Huang ◽  
Yung-Pei Chen
Keyword(s):  
Thin Film ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Nanocrystalline Silicon ◽  
Gate Bias ◽  
Threshold Voltage Shift ◽  
Voltage Shift ◽  
Bias Stress ◽  
Mechanical Tensile ◽  
Gate Bias Stress

ABSTRACTStaggered bottom-gate hydrogenated nanocrystalline silicon (nc-Si:H) thin-film transistors (TFTs) were demonstrated on flexible colorless polyimide substrates. The dc and ac bias-stress stability of these TFTs were investigated with and without mechanical tensile stress applied in parallel to the current flow direction. The findings indicate that the threshold voltage shift caused by an ac gate-bias stress was smaller compared to that caused by a dc gate-bias stress. Frequency dependence of threshold voltage shift was pronounced in the negative gate-bias stress experiments. Compared to TFTs under pure electrical gate-bias stressing, the stability of the nc-Si:H TFTs degrades further when the mechanical tensile strain is applied together with an electrical gate-bias stress.

Bias Stress Induced Threshold Voltage Shift in Pentacene Thin-Film Transistors

2006 ◽  
Vol 45 (No. 42) ◽  
pp. L1127-L1129 ◽  
Author(s):  
Daisuke Kawakami ◽  
Yuhsuke Yasutake ◽  
Hideyuki Nishizawa ◽  
Yutaka Majima
Keyword(s):  
Thin Film ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Threshold Voltage Shift ◽  
Voltage Shift ◽  
Bias Stress
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