Thickness dependence of space charge limited current and injection limited current in organic molecular semiconductors

2008 ◽  
Vol 93 (7) ◽  
pp. 073311 ◽  
Author(s):  
Ruchi Agrawal ◽  
Pramod Kumar ◽  
Subhasis Ghosh ◽  
Ajit Kumar Mahapatro
Keyword(s):  
Space Charge ◽  
Thickness Dependence ◽  
Space Charge Limited Current ◽  
Limited Current ◽  
Molecular Semiconductors ◽  
Space Charge Limited

Thickness dependence of density of gap states in diamond films studied using space-charge-limited current

2001 ◽  
Vol 89 (10) ◽  
pp. 5747-5753 ◽  
Author(s):  
Bo Gan ◽  
J. Ahn ◽  
Rusli ◽  
Qing Zhang ◽  
S. F. Yoon ◽  
...  
Keyword(s):  
Space Charge ◽  
Diamond Films ◽  
Thickness Dependence ◽  
Space Charge Limited Current ◽  
Limited Current ◽  
Gap States ◽  
Space Charge Limited

Space-charge-limited current in GaAs

1966 ◽  
Vol 2 (7) ◽  
pp. 282
Author(s):  
A.M. Phahle ◽  
K.C. Kao ◽  
J.H. Calderwood
Keyword(s):  
Space Charge ◽  
Space Charge Limited Current ◽  
Limited Current ◽  
Space Charge Limited

Study of Electron Transport in a-Si:H p-i-n Diodes: Use of the Transient Space-Charge-Limited-Current Technique

1995 ◽  
Vol 377 ◽  
Author(s):  
G. J. Adriaenssens ◽  
B. Yan ◽  
A. Eliat
Keyword(s):  
Space Charge ◽  
Conduction Band Edge ◽  
Time Range ◽  
Space Charge Limited Current ◽  
Transport Parameters ◽  
Limited Current ◽  
Emission Time ◽  
Time Regime ◽  
Carrier Extraction ◽  
Space Charge Limited

ABSTRACTA full and detailed transient space-charge-limited current (T-SCLC) study of a-Si:H p-i-n diodes has been carried out in the time range from 108s to 10s. In the short-time regime, general features of T-SCLC such as the current cusp and the carrier extraction period were observed, and related transport parameters were deduced. Electron emission from deep states was studied by measuring the current transients well beyond the extraction time. The emission time is thermally activated at temperatures higher than 250K and levels off at lower temperatures. The high temperature behaviour places the upper edge of the deep states at 0.42–0.52eV below the conduction band edge, and the attempt-to-escape frequency in the range of 1011-1013Hz. An observed shift of emission time with light intensity is attributed to defect relaxation.

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