Thickness dependence of density of gap states in diamond films studied using space-charge-limited current

2001 ◽  
Vol 89 (10) ◽  
pp. 5747-5753 ◽  
Author(s):  
Bo Gan ◽  
J. Ahn ◽  
Rusli ◽  
Qing Zhang ◽  
S. F. Yoon ◽  
...  
Keyword(s):  
Space Charge ◽  
Diamond Films ◽  
Thickness Dependence ◽  
Space Charge Limited Current ◽  
Limited Current ◽  
Gap States ◽  
Space Charge Limited

Space-charge-limited current flow and trap density in undoped diamond films

1993 ◽  
Vol 2 (5-7) ◽  
pp. 825-828 ◽  
Author(s):  
M. Werner ◽  
O. Dorsch ◽  
A. Hinze ◽  
E. Obermeier ◽  
R.E. Harper ◽  
...  
Keyword(s):  
Space Charge ◽  
Current Flow ◽  
Diamond Films ◽  
Trap Density ◽  
Space Charge Limited Current ◽  
Limited Current ◽  
Space Charge Limited

Space Charge Limited Current in Semiconducting Diamond Films

1994 ◽  
Vol 33 (Part 2, No. 5B) ◽  
pp. L702-L704 ◽  
Author(s):  
Yoshiaki Matsumae ◽  
Yukio Akiba ◽  
Yoichi Hirose ◽  
Tateki Kurosu ◽  
Masamori Iida
Keyword(s):  
Space Charge ◽  
Diamond Films ◽  
Space Charge Limited Current ◽  
Limited Current ◽  
Semiconducting Diamond ◽  
Space Charge Limited

Space Charge Limited Current in A-Si:H Devices Using High Electric Fields

1989 ◽  
Vol 149 ◽  
Author(s):  
J. C. Van Den Heuvel ◽  
R. C. Van Oort ◽  
B. Bokhorst ◽  
M. J. Geerts
Keyword(s):  
Space Charge ◽  
Electric Fields ◽  
Characteristic Temperature ◽  
Space Charge Limited Current ◽  
Limited Current ◽  
Current Voltage ◽  
Frenkel Emission ◽  
High Electric Fields ◽  
Gap States ◽  
Space Charge Limited

ABSTRACTSpace Charge Limited Current (SCLC) measurements are used to obtain the density of gap states of intrinsic a-Si:H. If an electron is trapped by a positively charged defect, then the electron can be released by a high electric field which disturbs the SCLC measurement. A correction for this effect, which is called Poole-Frenkel emission, in SCLC measurements is derived and used to analyze current-voltage measurements performed on n-i-n a-Si:H devices. It is shown that the Poole-Frenkel emission is absent, and that this is in accordance with the contemporary models for the gap states in a-Si:H.We also studied the characteristic temperature which is based on the concept that the distribution of gap states is exponential, and concluded that this distribution is not exponential.

Space-charge-limited current in GaAs

1966 ◽  
Vol 2 (7) ◽  
pp. 282
Author(s):  
A.M. Phahle ◽  
K.C. Kao ◽  
J.H. Calderwood
Keyword(s):  
Space Charge ◽  
Space Charge Limited Current ◽  
Limited Current ◽  
Space Charge Limited

Study of Electron Transport in a-Si:H p-i-n Diodes: Use of the Transient Space-Charge-Limited-Current Technique

1995 ◽  
Vol 377 ◽  
Author(s):  
G. J. Adriaenssens ◽  
B. Yan ◽  
A. Eliat
Keyword(s):  
Space Charge ◽  
Conduction Band Edge ◽  
Time Range ◽  
Space Charge Limited Current ◽  
Transport Parameters ◽  
Limited Current ◽  
Emission Time ◽  
Time Regime ◽  
Carrier Extraction ◽  
Space Charge Limited

ABSTRACTA full and detailed transient space-charge-limited current (T-SCLC) study of a-Si:H p-i-n diodes has been carried out in the time range from 108s to 10s. In the short-time regime, general features of T-SCLC such as the current cusp and the carrier extraction period were observed, and related transport parameters were deduced. Electron emission from deep states was studied by measuring the current transients well beyond the extraction time. The emission time is thermally activated at temperatures higher than 250K and levels off at lower temperatures. The high temperature behaviour places the upper edge of the deep states at 0.42–0.52eV below the conduction band edge, and the attempt-to-escape frequency in the range of 1011-1013Hz. An observed shift of emission time with light intensity is attributed to defect relaxation.

Sign in / Sign up

Export Citation Format

Share Document