Inversion-channel GaN metal-oxide-semiconductor field-effect transistor with atomic-layer-deposited Al2O3 as gate dielectric

Y. C. Chang; W. H. Chang; H. C. Chiu; L. T. Tung; C. H. Lee; K. H. Shiu; M. Hong; J. Kwo; J. M. Hong; C. C. Tsai

doi:10.1063/1.2969282

Inversion-channel GaN metal-oxide-semiconductor field-effect transistor with atomic-layer-deposited Al2O3 as gate dielectric

Applied Physics Letters ◽

10.1063/1.2969282 ◽

2008 ◽

Vol 93 (5) ◽

pp. 053504 ◽

Cited By ~ 48

Author(s):

Y. C. Chang ◽

W. H. Chang ◽

H. C. Chiu ◽

L. T. Tung ◽

C. H. Lee ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Gate Dielectric ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Inversion Channel ◽

Effect Transistor

Download Full-text

Inversion type InP metal oxide semiconductor field effect transistor using novel atomic layer deposited BeO gate dielectric

Applied Physics Letters ◽

10.1063/1.3614446 ◽

2011 ◽

Vol 99 (3) ◽

pp. 033502 ◽

Cited By ~ 12

Author(s):

J. H. Yum ◽

T. Akyol ◽

M. Lei ◽

D. A. Ferrer ◽

Todd. W. Hudnall ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Gate Dielectric ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Effect Transistor

Download Full-text

Self-aligned inversion-channel In0.2Ga0.8As metal-oxide-semiconductor field-effect transistor with molecular beam epitaxy Al2O3/Ga2O3(Gd2O3) as the gate dielectric

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.3565057 ◽

2011 ◽

Vol 29 (3) ◽

pp. 03C122 ◽

Cited By ~ 4

Author(s):

W. H. Chang ◽

T. H. Chiang ◽

Y. D. Wu ◽

M. Hong ◽

C. A. Lin ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Metal Oxide ◽

Field Effect ◽

Molecular Beam ◽

Field Effect Transistor ◽

Gate Dielectric ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Inversion Channel ◽

Effect Transistor

Download Full-text

Depletion-mode InGaAs metal-oxide-semiconductor field-effect transistor with oxide gate dielectric grown by atomic-layer deposition

Applied Physics Letters ◽

10.1063/1.1641527 ◽

2004 ◽

Vol 84 (3) ◽

pp. 434-436 ◽

Cited By ~ 125

Author(s):

P. D. Ye ◽

G. D. Wilk ◽

B. Yang ◽

J. Kwo ◽

H.-J. L. Gossmann ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Gate Dielectric ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Layer Deposition ◽

Effect Transistor

Download Full-text

GaN metal-oxide-semiconductor field-effect-transistor with atomic layer deposited Al2O3 as gate dielectric

Materials Science and Engineering B ◽

10.1016/j.mseb.2006.08.020 ◽

2006 ◽

Vol 135 (3) ◽

pp. 282-284 ◽

Cited By ~ 26

Author(s):

Y.Q. Wu ◽

P.D. Ye ◽

G.D. Wilk ◽

B. Yang

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Gate Dielectric ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Effect Transistor

Download Full-text

Correlations between structural and electrical properties of nitrided SiOx thin films used as power metal oxide semiconductor field effect transistor gate dielectric

Applied Physics Letters ◽

10.1063/1.3021404 ◽

2008 ◽

Vol 93 (18) ◽

pp. 182109

Author(s):

E. Fazio ◽

F. Neri ◽

G. Curró M. Camalleri ◽

D. Calí

Keyword(s):

Thin Films ◽

Electrical Properties ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Gate Dielectric ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Structural And Electrical Properties ◽

Effect Transistor

Download Full-text

High-performance self-aligned inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistor with Al2O3∕Ga2O3(Gd2O3) as gate dielectrics

Applied Physics Letters ◽

10.1063/1.2956393 ◽

2008 ◽

Vol 93 (3) ◽

pp. 033516 ◽

Cited By ~ 109

Author(s):

T. D. Lin ◽

H. C. Chiu ◽

P. Chang ◽

L. T. Tung ◽

C. P. Chen ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

High Performance ◽

Field Effect Transistor ◽

Gate Dielectrics ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Inversion Channel ◽

Effect Transistor

Download Full-text

GaN metal-oxide-semiconductor field-effect transistor inversion channel mobility modeling

Journal of Applied Physics ◽

10.1063/1.3140614 ◽

2009 ◽

Vol 105 (11) ◽

pp. 114510 ◽

Cited By ~ 28

Author(s):

A. Pérez-Tomás ◽

M. Placidi ◽

X. Perpiñà ◽

A. Constant ◽

P. Godignon ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Mobility Modeling ◽

Channel Mobility ◽

Inversion Channel ◽

Effect Transistor

Download Full-text

Analytical modeling of a split-gate dielectric modulated metal-oxide-semiconductor field-effect transistor for application as a biosensor

2014 2nd International Conference on Devices, Circuits and Systems (ICDCS) ◽

10.1109/icdcsyst.2014.6926183 ◽

2014 ◽

Cited By ~ 3

Author(s):

Ajay ◽

Rakhi Narang ◽

Manoj Saxena ◽

Mridula Gupta

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Analytical Modeling ◽

Field Effect Transistor ◽

Gate Dielectric ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Effect Transistor

Download Full-text

Atomic layer deposited (TiO2)x(Al2O3)1−x/In0.53Ga0.47As gate stacks for III-V based metal-oxide-semiconductor field-effect transistor applications

Applied Physics Letters ◽

10.1063/1.3684803 ◽

2012 ◽

Vol 100 (6) ◽

pp. 062905 ◽

Cited By ~ 25

Author(s):

C. Mahata ◽

S. Mallik ◽

T. Das ◽

C. K. Maiti ◽

G. K. Dalapati ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Stacks ◽

Effect Transistor

Download Full-text

Effects of Pyrogenic Reoxidation Annealing on Inversion Channel Mobility of 4H-SiC Metal-Oxide-Semiconductor Field-Effect Transistor Fabricated on $(11\bar{2}0)$ Face

Japanese Journal of Applied Physics ◽

10.1143/jjap.40.l1201 ◽

2001 ◽

Vol 40 (Part 2, No. 11B) ◽

pp. L1201-L1203 ◽

Cited By ~ 9

Author(s):

Junji Senzaki ◽

Kazutoshi Kojima ◽

Shinsuke Harada ◽

Ryoji Kosugi ◽

Seiji Suzuki ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Channel Mobility ◽

Inversion Channel ◽

Effect Transistor

Download Full-text