A comparison of CuO and Cu2O hole-injection layers for low voltage organic devices

2008 ◽  
Vol 93 (8) ◽  
pp. 083309 ◽  
Author(s):  
G. B. Murdoch ◽  
M. Greiner ◽  
M. G. Helander ◽  
Z. B. Wang ◽  
Z. H. Lu
2012 ◽  
Vol 22 (15) ◽  
pp. 3261-3266 ◽  
Author(s):  
Cephas E. Small ◽  
Sai-Wing Tsang ◽  
Junji Kido ◽  
Shu Kong So ◽  
Franky So

2011 ◽  
Vol 1359 ◽  
Author(s):  
J. Boizot ◽  
V. Gohri ◽  
H. Doyeux

ABSTRACTThe aim of this study is to analyze and mitigate the voltage drift phenomenon observed in top-emitting organic light emitting diodes (OLED) when driven at constant current. An operating device may experience voltage increase over time due to factors such as interface or bulk material degradation, charge accumulation and formation of trap states. Single-carrier devices were fabricated to understand the contribution to voltage drift from each of these causes. Doping in electron injection layer (4, 7-diphenyl-1,10-phenanthroline or Bphen) and hole injection layer (2,2’,7,7’-tetra(N,N-di-tolyl)amino-spiro-bifluorene or Spiro-TTB) were optimized to obtain ohmic injection contacts. Devices with tris(8-hydroxy-quinoline) aluminium (Alq3) degrade significantly with holes injection and undergo high voltage increase in lifetime test measurements. On the contrary, devices with N,N’-di(naphtalen-1-y1)-N,N’-diphenyl-benzidine (NPB) exhibit an ambipolar charge transport behavior and low voltage drift under both hole and electron injection.


2017 ◽  
Vol 53 (1) ◽  
pp. 180-183 ◽  
Author(s):  
Yang Wang ◽  
Shumeng Wang ◽  
Junqiao Ding ◽  
Lixiang Wang ◽  
Xiabin Jing ◽  
...  

Low-voltage-driving and power-efficient nondoped electrophosphorescent devices have been realized by increasing the dendron's HOMO energy level to favor effective hole injection and promote exciton formation.


Nanoscale ◽  
2014 ◽  
Vol 6 (15) ◽  
pp. 8565-8570 ◽  
Author(s):  
Hyungjin Lee ◽  
Donghwa Lee ◽  
Yumi Ahn ◽  
Eun-Woo Lee ◽  
Lee Soon Park ◽  
...  

The organic light-emitting diodes with an AgNW transparent conducting electrode exhibit remarkable mechanical flexibility and excellent device characteristics such as very low turn-on voltage and extremely high current and power efficiencies.


2016 ◽  
Vol 4 (34) ◽  
pp. 7999-8005 ◽  
Author(s):  
Jang-Woon Kim ◽  
Jeong-Do Oh ◽  
Dae-Kyu Kim ◽  
Han-Young Lee ◽  
Young-Geun Ha ◽  
...  

2019 ◽  
Vol 39 (1) ◽  
pp. 455-460 ◽  
Author(s):  
Vinicius R. Zanchin ◽  
Marco Roberto Cavallari ◽  
Fernando J. Fonseca ◽  
Katia F. Albertin ◽  
Inés Pereyra ◽  
...  

2010 ◽  
Vol 160 (13-14) ◽  
pp. 1456-1462 ◽  
Author(s):  
Gerold M. Rangger ◽  
Oliver T. Hofmann ◽  
Benjamin Bröker ◽  
Egbert Zojer

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Hong Chen ◽  
Lin Zhu ◽  
Chen Xue ◽  
Pinlei Liu ◽  
Xuerong Du ◽  
...  

AbstractSolution-processed metal-halide perovskites are emerging as one of the most promising materials for displays, lighting and energy generation. Currently, the best-performing perovskite optoelectronic devices are based on lead halides and the lead toxicity severely restricts their practical applications. Moreover, efficient white electroluminescence from broadband-emission metal halides remains a challenge. Here we demonstrate efficient and bright lead-free LEDs based on cesium copper halides enabled by introducing an organic additive (Tween, polyethylene glycol sorbitan monooleate) into the precursor solutions. We find the additive can reduce the trap states, enhancing the photoluminescence quantum efficiency of the metal halide films, and increase the surface potential, facilitating the hole injection and transport in the LEDs. Consequently, we achieve warm-white LEDs reaching an external quantum efficiency of 3.1% and a luminance of 1570 cd m−2 at a low voltage of 5.4 V, showing great promise of lead-free metal halides for solution-processed white LED applications.


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