scholarly journals Origin of high mobility within an amorphous polymeric semiconductor: Space-charge-limited current and trap distribution

2008 ◽  
Vol 93 (3) ◽  
pp. 033303 ◽  
Author(s):  
Dae Sung Chung ◽  
Dong Hoon Lee ◽  
Chanwoo Yang ◽  
Kipyo Hong ◽  
Chan Eon Park ◽  
...  
Keyword(s):  
Space Charge ◽  
High Mobility ◽  
Space Charge Limited Current ◽  
Polymeric Semiconductor ◽  
Limited Current ◽  
Space Charge Limited

Analysis of charge transport in high-mobility diketopyrrolopyrole polymers by space charge limited current and time of flight methods

RSC Advances ◽  
2014 ◽  
Vol 4 (67) ◽  
pp. 35344 ◽  
Author(s):  
Kwang Hee Cheon ◽  
Jangwhan Cho ◽  
Byung Tack Lim ◽  
Hui-Jun Yun ◽  
Soon-Ki Kwon ◽  
...  
Keyword(s):  
Space Charge ◽  
Charge Transport ◽  
Time Of Flight ◽  
High Mobility ◽  
Space Charge Limited Current ◽  
Limited Current ◽  
Space Charge Limited

Space-charge-limited current in GaAs

1966 ◽  
Vol 2 (7) ◽  
pp. 282
Author(s):  
A.M. Phahle ◽  
K.C. Kao ◽  
J.H. Calderwood
Keyword(s):  
Space Charge ◽  
Space Charge Limited Current ◽  
Limited Current ◽  
Space Charge Limited

Study of Electron Transport in a-Si:H p-i-n Diodes: Use of the Transient Space-Charge-Limited-Current Technique

1995 ◽  
Vol 377 ◽  
Author(s):  
G. J. Adriaenssens ◽  
B. Yan ◽  
A. Eliat
Keyword(s):  
Space Charge ◽  
Conduction Band Edge ◽  
Time Range ◽  
Space Charge Limited Current ◽  
Transport Parameters ◽  
Limited Current ◽  
Emission Time ◽  
Time Regime ◽  
Carrier Extraction ◽  
Space Charge Limited

ABSTRACTA full and detailed transient space-charge-limited current (T-SCLC) study of a-Si:H p-i-n diodes has been carried out in the time range from 108s to 10s. In the short-time regime, general features of T-SCLC such as the current cusp and the carrier extraction period were observed, and related transport parameters were deduced. Electron emission from deep states was studied by measuring the current transients well beyond the extraction time. The emission time is thermally activated at temperatures higher than 250K and levels off at lower temperatures. The high temperature behaviour places the upper edge of the deep states at 0.42–0.52eV below the conduction band edge, and the attempt-to-escape frequency in the range of 1011-1013Hz. An observed shift of emission time with light intensity is attributed to defect relaxation.

scholarly journals Thickness scaling of the space-charge-limited current in poly(p-phenylene vinylene)

2005 ◽  
Vol 86 (9) ◽  
pp. 092105 ◽  
Author(s):  
P. W. M. Blom ◽  
C. Tanase ◽  
D. M. de Leeuw ◽  
R. Coehoorn
Keyword(s):  
Space Charge ◽  
Phenylene Vinylene ◽  
Space Charge Limited Current ◽  
Limited Current ◽  
Space Charge Limited
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