Mechanically flexible low-leakage multilayer gate dielectrics for flexible organic thin film transistors

2008 ◽  
Vol 93 (1) ◽  
pp. 013305 ◽  
Author(s):  
Y. G. Seol ◽  
H. Y. Noh ◽  
S. S. Lee ◽  
J. H. Ahn ◽  
N.-E. Lee
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Gate Dielectrics ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Low Leakage

Tunable dielectric constant of polyimide–barium titanate nanocomposite materials as the gate dielectrics for organic thin film transistor applications

RSC Advances ◽  
2014 ◽  
Vol 4 (107) ◽  
pp. 62132-62139 ◽  
Author(s):  
Yang-Yen Yu ◽  
Cheng-Liang Liu ◽  
Yung-Chih Chen ◽  
Yu-Cheng Chiu ◽  
Wen-Chang Chen
Keyword(s):  
Thin Film ◽  
Dielectric Constant ◽  
Thin Film Transistors ◽  
Gate Dielectrics ◽  
Thin Film Transistor ◽  
Nanocomposite Materials ◽  
Organic Thin Film Transistors ◽  
Hybrid Nanocomposite ◽  
Organic Thin Film ◽  
Organic Thin Film Transistor

Polyimide (PI)–BaTiO3 (BT) NPs hybrid nanocomposite dielectrics with tunable BT loadings (X) were fabricated for investigating their properties on the pentacene organic thin film transistors (OTFTs).

Universal solution-processed high-k amorphous oxide dielectrics for high-performance organic thin film transistors

RSC Advances ◽  
2014 ◽  
Vol 4 (29) ◽  
pp. 14890-14895 ◽  
Author(s):  
Xurong Zhao ◽  
Sumei Wang ◽  
Aiju Li ◽  
Jun Ouyang ◽  
Guodong Xia ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Performance ◽  
Organic Thin Film Transistors ◽  
Dielectric Films ◽  
Operating Voltage ◽  
Polymer Modification ◽  
Organic Thin Film ◽  
Solution Processed ◽  
Low Leakage

Solution-processed high-k ZrTiOx dielectric films achieve a k value and capacitance of 53 and 467 nF cm−2, and a low leakage current of 4 × 10−8 A cm−2 with polymer modification. High-performance organic thin film transistors with a carrier mobility of 0.58 cm2 V−1 s−1, and a low operating voltage of 6 V were realized with ZrTiOx dielectric films.

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