Driving force for Sn whisker growth in the system Cu–Sn

2008 ◽  
Vol 93 (1) ◽  
pp. 011906 ◽  
Author(s):  
M. Sobiech ◽  
U. Welzel ◽  
E. J. Mittemeijer ◽  
W. Hügel ◽  
A. Seekamp
Keyword(s):  
Driving Force ◽  
Whisker Growth ◽  
Sn Whisker

Spontaneous Tin (Sn) Whisker Growth from Electroplated Tin and Lead-Free Tin Alloys Coatings: A Short Review

2018 ◽  
Vol 280 ◽  
pp. 151-156 ◽  
Author(s):  
Aimi Noorliyana Hashim ◽  
Mohd Arif Anuar Mohd Salleh
Keyword(s):  
Driving Force ◽  
Room Temperature ◽  
Whisker Growth ◽  
Copper Substrate ◽  
Short Review ◽  
Hazardous Substances ◽  
Lead Free ◽  
Sn Whisker ◽  
Tin Alloys ◽  
Sn Whiskers

Since the environmental regulations of Reduction of Hazardous Substances (RoHS) directive came into effect in Europe and Asia on July 1, 2006, requiring the removal of any lead (Pb) content from the electronics industry, the issue of tin (Sn) whisker growth from pure Sn and SnPb-free alloys has become one of the most imperative issues that need to be resolved. Moreover, with the increasing demand for electronics miniaturization, Sn whisker growth is a severe threat to the reliability of microelectronic devices. Sn whiskers grow spontaneously from an electrodeposited tin coating on a copper substrate at room temperature, which can lead to well-documented system failures in electronics industries. The Sn whisker phenomenon unavoidably gives rise to troubles. This paper briefly reviews to better understand the fundamental properties of Sn whisker growth and at the same time discover the effective mitigation practices for whisker growth in green electronic devices. It is generally accepted that compressive stress generated from the growth of Cu6Sn5 intermetallic compound (IMC) is the primary driving force for Sn whisker growth during room temperature storage. It is, therefore, important to determine that the relationship between IMC growth and Sn whisker growth. Reduction of stress in the IMC layer can therefore reduce the driving force for whisker formation and be used as a means for whisker mitigation. To date, there are no successful methods that can suppress the growth of Sn whisker as efficient as Pb addition. It is hoped that the Sn whisker growth mechanisms are understood better in the future, with better measuring and monitoring methodologies and systems being developed, the real solutions may be eventually developed to eliminate or mitigate the Sn whisker problems of green reliability lead-free electronic assemblies.

Stress analysis of spontaneous Sn whisker growth

2006 ◽  
Vol 18 (1-3) ◽  
pp. 269-281 ◽  
Author(s):  
K. N. Tu ◽  
Chih Chen ◽  
Albert T. Wu
Keyword(s):  
Stress Analysis ◽  
Whisker Growth ◽  
Sn Whisker

The Effect of Micro-Alloying of Sn Plating on Mitigation of Sn Whisker Growth

2009 ◽  
Vol 38 (12) ◽  
pp. 2726-2734 ◽  
Author(s):  
Aleksandra Dimitrovska ◽  
Radovan Kovacevic
Keyword(s):  
Whisker Growth ◽  
Sn Whisker

Effect of Environment on Sn Whisker Growth during Welding of Electronic Wires

2015 ◽  
Vol 1110 ◽  
pp. 235-240 ◽  
Author(s):  
Tomomi Sakakida ◽  
Tatsuo Kubouchi ◽  
Yasuyuki Miyano ◽  
Mamoru Takahashi ◽  
Osamu Kamiya
Keyword(s):  
Energy Balance ◽  
Weld Metal ◽  
Whisker Growth ◽  
Weld Zone ◽  
Electrolytic Capacitor ◽  
Sn Whisker ◽  
Sn Whiskers ◽  
Weld Metal Microstructure ◽  
Short Circuits ◽  
Metal Microstructure

In Pb-free Al-Sn welding of electrolytic parts, single-crystal Sn whiskers easily form and can cause problems such as short circuits. Here we report that the growth of Sn whiskers in the weld zone of Al electrolytic condenser leads was suppressed in a vacuum environment. We examined the effect of the environment and weld metal microstructure in order to understand how to control and prevent whisker growth. In vacuum, the weld zone did not form whiskers after more than 100 h, whereas in air, whiskers grew within several hours. This suggests that whiskers require oxygen to form. The growth can be explained by the energy balance between the potential energy of the weld metal and the surface energy of the whisker. Our results will contribute to developing techniques for suppressing the formation of Sn whiskers during the percussion welding of Al electrolytic capacitor leads.

Sn Whisker Growth in Cu(Top)-Sn(Bottom) Bilayer System upon Room Temperature Aging

2013 ◽  
Vol 785-786 ◽  
pp. 918-923 ◽  
Author(s):  
Lin Huang ◽  
Xue Nian Lin ◽  
Ren Wu Chen ◽  
Jiang Yong Wang
Keyword(s):  
Room Temperature ◽  
Whisker Growth ◽  
X Ray Diffraction ◽  
Sn Whisker ◽  
X Ray ◽  
Bilayer System ◽  
Room Temperature Aging ◽  
Sublayer Thickness ◽  
Temperature Aging ◽  
Scanning Electron

The Sn whisker growth in Cu(top)-Sn(bottom) bilayer system upon room temperature aging was investigated by scanning electron microscope and X-ray diffraction techniques. The experimental observations indicate that the Sn whisker growth on the Cu surface in Cu-Sn bilayer system is different from that on the Sn surface in Sn-Cu bilayer system. When the Sn sublayer thickness is less than 0.5μm, the Sn whisker growth can take place in Cu-Sn system but not in Sn-Cu system. An explanation for Sn whisker growth in Cu-Sn bilayer system is given.

Investigation of Sn Whisker Growth in Electroplated Sn and Sn-Ag as a Function of Plating Variables and Storage Conditions

2013 ◽  
Vol 43 (1) ◽  
pp. 259-269 ◽  
Author(s):  
Jaewon Chang ◽  
Sung K. Kang ◽  
Jae-Ho Lee ◽  
Keun-Soo Kim ◽  
Hyuck Mo Lee
Keyword(s):  
Whisker Growth ◽  
Storage Conditions ◽  
Sn Whisker ◽  
And Storage

Relieving Sn whisker growth driven by oxidation on Cu leadframe by annealing and reflowing treatments

2007 ◽  
Vol 102 (4) ◽  
pp. 043521 ◽  
Author(s):  
C. C. Wei ◽  
P. C. Liu ◽  
Chih Chen ◽  
Jeffrey C.B. Lee ◽  
I Ping Wang
Keyword(s):  
Whisker Growth ◽  
Sn Whisker
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