Relieving Sn whisker growth driven by oxidation on Cu leadframe by annealing and reflowing treatments

2007 ◽  
Vol 102 (4) ◽  
pp. 043521 ◽  
Author(s):  
C. C. Wei ◽  
P. C. Liu ◽  
Chih Chen ◽  
Jeffrey C.B. Lee ◽  
I Ping Wang
Keyword(s):  
2006 ◽  
Vol 18 (1-3) ◽  
pp. 269-281 ◽  
Author(s):  
K. N. Tu ◽  
Chih Chen ◽  
Albert T. Wu

2008 ◽  
Vol 93 (1) ◽  
pp. 011906 ◽  
Author(s):  
M. Sobiech ◽  
U. Welzel ◽  
E. J. Mittemeijer ◽  
W. Hügel ◽  
A. Seekamp

2009 ◽  
Vol 38 (12) ◽  
pp. 2726-2734 ◽  
Author(s):  
Aleksandra Dimitrovska ◽  
Radovan Kovacevic
Keyword(s):  

2015 ◽  
Vol 1110 ◽  
pp. 235-240 ◽  
Author(s):  
Tomomi Sakakida ◽  
Tatsuo Kubouchi ◽  
Yasuyuki Miyano ◽  
Mamoru Takahashi ◽  
Osamu Kamiya

In Pb-free Al-Sn welding of electrolytic parts, single-crystal Sn whiskers easily form and can cause problems such as short circuits. Here we report that the growth of Sn whiskers in the weld zone of Al electrolytic condenser leads was suppressed in a vacuum environment. We examined the effect of the environment and weld metal microstructure in order to understand how to control and prevent whisker growth. In vacuum, the weld zone did not form whiskers after more than 100 h, whereas in air, whiskers grew within several hours. This suggests that whiskers require oxygen to form. The growth can be explained by the energy balance between the potential energy of the weld metal and the surface energy of the whisker. Our results will contribute to developing techniques for suppressing the formation of Sn whiskers during the percussion welding of Al electrolytic capacitor leads.


2013 ◽  
Vol 785-786 ◽  
pp. 918-923 ◽  
Author(s):  
Lin Huang ◽  
Xue Nian Lin ◽  
Ren Wu Chen ◽  
Jiang Yong Wang

The Sn whisker growth in Cu(top)-Sn(bottom) bilayer system upon room temperature aging was investigated by scanning electron microscope and X-ray diffraction techniques. The experimental observations indicate that the Sn whisker growth on the Cu surface in Cu-Sn bilayer system is different from that on the Sn surface in Sn-Cu bilayer system. When the Sn sublayer thickness is less than 0.5μm, the Sn whisker growth can take place in Cu-Sn system but not in Sn-Cu system. An explanation for Sn whisker growth in Cu-Sn bilayer system is given.


2013 ◽  
Vol 43 (1) ◽  
pp. 259-269 ◽  
Author(s):  
Jaewon Chang ◽  
Sung K. Kang ◽  
Jae-Ho Lee ◽  
Keun-Soo Kim ◽  
Hyuck Mo Lee

2018 ◽  
Vol 273 ◽  
pp. 107-111 ◽  
Author(s):  
Noriyuki Kuwano ◽  
Marina Binti Lias ◽  
Nur Azmah Binti Nordin ◽  
Youhei Soejima ◽  
Ahmad Rafiqan bin Nayan

Since the mechanism of Sn-whisker growth is closely related with the behavior of deformation and recrystallization, understanding of the behavior is very important to establish the measure for mitigation of whisker growth. In this work, microstructural changes after heavy deformation by scratching were characterized by EBSD for a single crystal of β-Sn, and the following results were obtained. Three types of crystal grains appear immediately after the deformation; small grains in aggregation, large serrated grains and rim-grains. The small grains are considered to be formed by dynamic recrystallization. They continue to grow at a room temperature over a lengthy period of time. The large grain has a certain crystallographic relationship with the matrix where <100> axes of the large grain and the matrix are almost parallel to each other. The serrated boundaries of large grain are so stable that the large grain does not show a grain growth process. The stable boundary is considered to promote a continuous growth of whiskers.


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