Comparison of leakage behaviors in p- and n-type metal-oxide-semiconductor capacitors with hafnium silicon oxynitride gate dielectric by electron-beam-induced current

2008 ◽  
Vol 92 (26) ◽  
pp. 262103 ◽  
Author(s):  
Jun Chen ◽  
Takashi Sekiguchi ◽  
Naoki Fukata ◽  
Masami Takase ◽  
Toyohiro Chikyo ◽  
...  
Keyword(s):  
Electron Beam ◽  
Metal Oxide ◽  
Gate Dielectric ◽  
Metal Oxide Semiconductor ◽  
Silicon Oxynitride ◽  
Oxide Semiconductor ◽  
Induced Current ◽  
Electron Beam Induced Current

Electron-Beam-Induced Current Study of Breakdown Behavior of High-K Gate MOSFETs

2009 ◽  
Vol 156-158 ◽  
pp. 461-466
Author(s):  
Jun Chen ◽  
Takashi Sekiguchi ◽  
Masami Takase ◽  
Naoki Fukata ◽  
Ryu Hasunuma ◽  
...  
Keyword(s):  
Electron Beam ◽  
Gate Dielectric ◽  
Dielectric Breakdown ◽  
Microscopic Investigation ◽  
Oxide Semiconductor ◽  
Induced Current ◽  
Electrical Stress ◽  
High K ◽  
Electron Beam Induced Current ◽  
Induced Defects

We report a dynamic and microscopic investigation of electrical stress induced defects in metal-oxide-semiconductor (MOS) devices with high-k gate dielectric by using electron-beam induced current (EBIC) technique. The correlation between time-dependent dielectric breakdown (TDDB) characteristics and EBIC imaging of breakdown sites are found. A systematic study was performed on pre-existing and electrical stress induced defects. Stress-induced defects are related to the formation of electron trapping defects. The origin of pre-existing defects is also discussed in terms of oxygen vacancy model with comparing different gate electrodes.

Characterization of HfO2/Si Exposed to Water Vapor at Room Temperature

2006 ◽  
Vol 917 ◽  
Author(s):  
Carlos Driemeier ◽  
Elizandra Martinazzi ◽  
Israel J. R. Baumvol ◽  
Evgeni Gusev
Keyword(s):  
Water Vapor ◽  
Metal Oxide ◽  
Room Temperature ◽  
Gate Dielectric ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Dielectric Films ◽  
Nuclear Reaction Analysis ◽  
Environmental Air

AbstractHfO2-based materials are the leading candidates to replace SiO2 as the gate dielectric in Si-based metal-oxide-semiconductor filed-effect transistors. The ubiquitous presence of water vapor in the environments to which the dielectric films are exposed (e.g. in environmental air) leads to questions about how water could affect the properties of the dielectric/Si structures. In order to investigate this topic, HfO2/SiO2/Si(001) thin film structures were exposed at room temperature to water vapor isotopically enriched in 2H and 18O followed by quantification and profiling of these nuclides by nuclear reaction analysis. We showed i) the formation of strongly bonded hydroxyls at the HfO2 surface; ii) room temperature migration of oxygen and water-derived oxygenous species through the HfO2 films, indicating that HfO2 is a weak diffusion barrier for these oxidizing species; iii) hydrogenous, water-derived species attachment to the SiO2 interlayer, resulting in detrimental hydrogenous defects therein. Consequences of these results to HfO2-based metal-oxide-semiconductor devices are discussed.

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