Shear-strain-induced low symmetry phase and domain ordering in epitaxial La0.7Sr0.3MnO3 thin films

2008 ◽  
Vol 92 (26) ◽  
pp. 261901 ◽  
Author(s):  
S. W. Jin ◽  
G. Y. Gao ◽  
Z. Huang ◽  
Z. Z. Yin ◽  
X. Zheng ◽  
...  
2005 ◽  
Vol 86 (18) ◽  
pp. 182905 ◽  
Author(s):  
Guangyong Xu ◽  
H. Hiraka ◽  
G. Shirane ◽  
Jiefang Li ◽  
Junling Wang ◽  
...  

Nano Letters ◽  
2021 ◽  
Author(s):  
Fei Zhou ◽  
Yang Li ◽  
Xingqi Liao ◽  
Shuren Lin ◽  
Haizeng Song ◽  
...  

AIP Advances ◽  
2013 ◽  
Vol 3 (1) ◽  
pp. 012110 ◽  
Author(s):  
Peng Ren ◽  
Soon Khuen Cho ◽  
Peng Liu ◽  
Lu You ◽  
Xi Zou ◽  
...  

Author(s):  
M. Kauranen ◽  
S. Van Elshocht ◽  
T. Verbiest ◽  
A. Persoons ◽  
C. Nuckolls ◽  
...  
Keyword(s):  

2019 ◽  
Vol 75 (2) ◽  
pp. 379-397 ◽  
Author(s):  
Mikhail V. Talanov

The quadruple perovskites AA′3 B 4 X 12 are characterized by an extremely wide variety of intriguing physical properties, which makes them attractive candidates for various applications. Using group-theoretical analysis, possible 1:3 A-site-ordered low-symmetry phases have been found. They can be formed from a parent Pm{\bar 3}m perovskite structure (archetype) as a result of real or hypothetical (virtual) phase transitions due to different structural mechanisms (orderings and displacements of atoms, tilts of octahedra). For each type of low-symmetry phase, the full set of order parameters (proper and improper order parameters), the calculated structure, including the space group, the primitive cell multiplication, splitting of the Wyckoff positions and the structural formula were determined. All ordered phases were classified according to the irreducible representations of the space group of the parent phase (archetype) and systematized according to the types of structural mechanisms responsible for their formation. Special attention is paid to the structural mechanisms of formation of the low-symmetry phase of the compounds known from experimental data, such as: CaCu3Ti4O12, CaCu3Ga2Sn2O12, CaMn3Mn4O12, Ce1/2Cu3Ti4O12, LaMn3Mn4O12, BiMn3Mn4O12 and others. For the first time, the phenomenon of variability in the choice of the proper order parameters, which allows one to obtain the same structure by different group-theoretical paths, is established. This phenomenon emphasizes the fundamental importance of considering the full set of order parameters in describing phase transitions. Possible transition paths from the archetype with space group Pm{\bar 3}m to all 1:3 A-site-ordered perovskites are illustrated using the Bärnighausen tree formalism. These results may be used to identify new phases and interpret experimental results, determine the structural mechanisms responsible for the formation of low-symmetry phases as well as to understand the structural genesis of the perovskite-like phases. The obtained non-model group-theoretical results in combination with crystal chemical data and first-principles calculations may be a starting point for the design of new functional materials with a perovskite structure.


1982 ◽  
Vol 60 (4) ◽  
pp. 397-398 ◽  
Author(s):  
Robin L. Armstrong ◽  
Marie D'Iorio ◽  
Maximo E. Ramia

Measurements of the temperature dependence of the intensities of the halogen nuclear quadrupole resonances in K2PtBr6 and K2ReCl6, in the cubic phase are reported. These results provide indirect evidence for the formation of dynamic clusters of the low symmetry phase as a precursor to the occurrence of rotative type phase transitions to tetragonal structures in these crystals.


Author(s):  
Max Kneiß ◽  
Daniel Splith ◽  
Holger von Wenckstern ◽  
Michael Lorenz ◽  
Thorsten Schultz ◽  
...  

Abstract Pseudomorphic and relaxed $$\alpha$$ α -(Al$$_x$$ x Ga$$_{1-x}$$ 1 - x )$$_2$$ 2 O$$_3$$ 3 thin films are grown by combinatorial pulsed laser deposition in the entire composition range on prismatic a- and m-plane $$\alpha$$ α -Al$$_2$$ 2 O$$_3$$ 3 substrates. Pseudomorphic growth on m-plane sapphire has been achieved for $$x \ge 0.45$$ x ≥ 0.45 . A distinct difference between the a- and m-epitaxial plane is observed in reciprocal space map measurements being in agreement with continuum elasticity theory for rhombohedral heterostructures. While pseudomorphic layers on m-plane sapphire show a pronounced shear strain $$e'_5$$ e 5 ′ along the c-axis direction, relaxed layers exhibit a global lattice tilt in the same direction. Both effects are not present on the a-epitaxial plane. Out-of-plane lattice constants as well as $$e'_5$$ e 5 ′ are modeled as function of x employing elasticity theory, confirming theoretical values of the elastic stiffness tensor for $$\alpha$$ α -Ga$$_2$$ 2 O$$_3$$ 3 , especially the non-zero value of the $$C_{14}$$ C 14 component. Possible pyramidal slip systems for strain relaxation in c-axis direction are examined to explain and numerically model the difference in lattice tilt for the two substrate orientations. Graphic abstract


2017 ◽  
Vol 92 (5) ◽  
pp. 054006 ◽  
Author(s):  
T L Linnik ◽  
V N Kats ◽  
J Jäger ◽  
A S Salasyuk ◽  
D R Yakovlev ◽  
...  

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