scholarly journals Low symmetry phase in Pb(Zr0.52Ti0.48)O3 epitaxial thin films with enhanced ferroelectric properties

2006 ◽  
Vol 89 (26) ◽  
pp. 262905 ◽  
Author(s):  
Li Yan ◽  
Jiefang Li ◽  
Hu Cao ◽  
D. Viehland
Keyword(s):  
Thin Films ◽  
Ferroelectric Properties ◽  
Epitaxial Thin Films ◽  
Symmetry Phase ◽  
Low Symmetry

Effect of Cr substitution on ferrimagnetic and ferroelectric properties of GaFeO3 epitaxial thin films

2018 ◽  
Vol 113 (16) ◽  
pp. 162901 ◽  
Author(s):  
Tsukasa Katayama ◽  
Takuya Osakabe ◽  
Shintaro Yasui ◽  
Yosuke Hamasaki ◽  
Badari Narayana Rao ◽  
...  
Keyword(s):  
Thin Films ◽  
Ferroelectric Properties ◽  
Epitaxial Thin Films ◽  
Cr Substitution

Formation of the orthorhombic phase in CeO2-HfO2 solid solution epitaxial thin films and their ferroelectric properties

2019 ◽  
Vol 114 (23) ◽  
pp. 232902 ◽  
Author(s):  
T. Shiraishi ◽  
S. Choi ◽  
T. Kiguchi ◽  
T. Shimizu ◽  
H. Funakubo ◽  
...  
Keyword(s):  
Thin Films ◽  
Solid Solution ◽  
Ferroelectric Properties ◽  
Orthorhombic Phase ◽  
Epitaxial Thin Films

scholarly journals Low symmetry phase in (001) BiFeO3 epitaxial constrained thin films

2005 ◽  
Vol 86 (18) ◽  
pp. 182905 ◽  
Author(s):  
Guangyong Xu ◽  
H. Hiraka ◽  
G. Shirane ◽  
Jiefang Li ◽  
Junling Wang ◽  
...  
Keyword(s):  
Thin Films ◽  
Symmetry Phase ◽  
Low Symmetry

scholarly journals Giant flexoelectric effect through interfacial strain relaxation

2012 ◽  
Vol 370 (1977) ◽  
pp. 4944-4957 ◽  
Author(s):  
Daesu Lee ◽  
Tae Won Noh
Keyword(s):  
Thin Films ◽  
Strain Relaxation ◽  
Ferroelectric Properties ◽  
Epitaxial Thin Films ◽  
Epitaxial Thin Film ◽  
Strain Gradients ◽  
Bulk Solids ◽  
Flexoelectric Effect ◽  
Potential Applications ◽  
Interfacial Strain

Interfacial strain gradients in oxide epitaxial thin films provide an interesting opportunity to study flexoelectric effects and their potential applications. Oxide epitaxial thin films can exhibit giant and tunable flexoelectric effects, which are six or seven orders of magnitude larger than those in conventional bulk solids. The strain gradient in an oxide epitaxial thin film can generate an electric field above 1 MV m −1 by flexoelectricity, large enough to affect the physical properties of the film. Giant flexoelectric effects on ferroelectric properties are discussed in this overview of recent experimental observations.

Ferroelectric properties of manganese doped (Bi1/2Na1/2)TiO3 and (Bi1/2Na1/2)TiO3–BaTiO3 epitaxial thin films

2015 ◽  
Vol 359 ◽  
pp. 923-930 ◽  
Author(s):  
A. Gallegos-Melgar ◽  
D.G. Espinosa-Arbelaez ◽  
F.J. Flores-Ruiz ◽  
A. Lahmar ◽  
J.-L. Dellis ◽  
...  
Keyword(s):  
Thin Films ◽  
Ferroelectric Properties ◽  
Epitaxial Thin Films

scholarly journals Intrinsic ferroelectricity in Y-doped HfO2 thin films

2021 ◽  
Author(s):  
Yun Yu ◽  
Pratyush Buragohain ◽  
Ming Li ◽  
Zahra Ahmadi ◽  
Yizhi Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Spontaneous Polarization ◽  
Ferroelectric Properties ◽  
Orthorhombic Phase ◽  
Structural Defects ◽  
Epitaxial Thin Films ◽  
High Crystallinity ◽  
Theoretical Predictions ◽  
Crystal Space

Abstract Ferroelectric HfO2-based materials hold great potential for widespread integration of ferroelectricity into modern electronics due to their robust ferroelectric properties at the nanoscale and compatibility with the existing Si technology. Earlier work indicated that the nanometer crystal grain size was crucial for stabilization of the ferroelectric phase of hafnia. This constraint caused high density of unavoidable structural defects of the HfO2-based ferroelectrics, obscuring the intrinsic ferroelectricity inherited from the crystal space group of bulk HfO2. Here, we demonstrate the intrinsic ferroelectricity in Y-doped HfO2 films of high crystallinity. Contrary to the common expectation, we show that in the 5% Y-doped HfO2 epitaxial thin films, high crystallinity enhances the spontaneous polarization up to a record-high 50 µC/cm2 value at room temperature. The high spontaneous polarization persists at reduced temperature, with polarization values consistent with our theoretical predictions, indicating the dominant contribution from the intrinsic ferroelectricity. The crystal structure of these films reveals the Pca21 orthorhombic phase with a small rhombohedral distortion, underlining the role of the anisotropic stress and strain. These results open a pathway to controlling the intrinsic ferroelectricity in the HfO2-based materials and optimizing their performance in applications.

Shear-strain-induced low symmetry phase and domain ordering in epitaxial La0.7Sr0.3MnO3 thin films

2008 ◽  
Vol 92 (26) ◽  
pp. 261901 ◽  
Author(s):  
S. W. Jin ◽  
G. Y. Gao ◽  
Z. Huang ◽  
Z. Z. Yin ◽  
X. Zheng ◽  
...  
Keyword(s):  
Thin Films ◽  
Shear Strain ◽  
Symmetry Phase ◽  
Low Symmetry

All Epitaxial Babi4Ti4O15 - LaNiO3 Heterostructures

1998 ◽  
Vol 541 ◽  
Author(s):  
K. M. Satyalakshmi ◽  
A. Pignolet ◽  
M. Alexe ◽  
N. D. Zakharov ◽  
C. Harnagea ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Ferroelectric Properties ◽  
Hysteresis Loops ◽  
Ferroelectric Thin Film ◽  
Epitaxial Thin Films ◽  
Oxide Electrodes ◽  
Deposition Parameters ◽  
Ferroelectric Hysteresis ◽  
Ferroelectric Oxides

AbstractBismuth-based layer-structured ferroelectric oxides are gaining much attention for ferroelectric thin film applications due to their low fatigue. Epitaxial thin films of these layered ferroelectric oxides grown on epitaxial perovskite-type conducting oxide electrodes such as LaNiO3 are known to further improve the fatigue resistance. In this paper the ferroelectric properties of BaBi4Ti4O15films grown by pulsed laser deposition on epitaxial LaNiO3/SrTiO3(100) and LaNiO3/YSZ/Si(100) substrates are presented. BaBi4Ti4O15thin films with mixed a - and c - orientation exhibit ferroelectric hysteresis loops with a remanent polarization Pr of 2 μC/cm2and a coercive field Ec of about 75 kV/cm. The effect of the deposition parameters on thin film orientation, morphology and the ferroelectric properties of BBiT are discussed.

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