Photo- and thermally induced changes in the refractive index and film thickness of amorphous As2S8 film

2008 ◽  
Vol 103 (12) ◽  
pp. 123523 ◽  
Author(s):  
L. E. Zou ◽  
B. X. Chen ◽  
L. P. Du ◽  
H. Hamanaka ◽  
M. Iso
Keyword(s):  
Refractive Index ◽  
Film Thickness ◽  
Thermally Induced ◽  
Induced Changes

MICROFIBER STRUCTURES FOR SENSOR APPLICATIONS

2012 ◽  
Vol 21 (01) ◽  
pp. 1250003 ◽  
Author(s):  
S. W. HARUN ◽  
K. S. LIM ◽  
H. AHMAD
Keyword(s):  
Refractive Index ◽  
Electric Current ◽  
Copper Wire ◽  
Extinction Ratio ◽  
Resonant Wavelength ◽  
Wavelength Shift ◽  
Thermally Induced ◽  
Sensor Applications ◽  
Induced Changes ◽  
Ratio Reduction

Microfiber loop resonator (MLR) and microfiber knot resonator (MKR) are fabricated using melt-stretching method for applications in temperature and current sensor, respectively. The MLR is embedded into low refractive index polymer for robustness. Although the spacing of the transmission comb spectrum of the MLR is unchanged with temperature, the extinction ratio of the spectrum is observed to decrease linearly with temperature due to induced changes in the material's refractive index. The slope of the extinction ratio reduction against temperature is about 0.043dB/°C. With the assistance of a copper wire that is wrapped by the MKR, resonant wavelength can be tuned by varying the electric current delivered to the wire. The resonant wavelength change is based on the thermally induced optical phase shift in the MKR due to the heat produced by the flow of electric current over a short transit length. It is shown that the wavelength shift is linearly proportional to the square of current in the copper wire with a tuning slope of 46 pm/A2.

Thermally induced changes in cluster-assembled carbon nanocluster films observed via photoelectron spectroscopy

2003 ◽  
Vol 212-213 ◽  
pp. 879-884 ◽  
Author(s):  
E. Magnano ◽  
C. Cepek ◽  
M. Sancrotti ◽  
F. Siviero ◽  
S. Vinati ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Thermally Induced ◽  
Induced Changes

Formation process of interface states at grain boundaries in sputtered polycrystalline Si films

1999 ◽  
Vol 14 (2) ◽  
pp. 371-376 ◽  
Author(s):  
Yoshitaka Nakano ◽  
Jiro Sakata ◽  
Yasunori Taga
Keyword(s):  
Energy Levels ◽  
Columnar Structure ◽  
Systematic Investigation ◽  
Defect States ◽  
Electron Microscopic ◽  
Thermally Induced ◽  
Transmission Electron ◽  
Transmission Electron Microscopic ◽  
Si Films ◽  
Induced Changes

A systematic investigation has been made on surface defect states of crystallites in the crystallization process of sputtered amorphous silicon films by isothermal annealing. Transmission electron microscopic observations indicate a pronounced vertical columnar structure in the upper part of the films, where the crystallization is delayed. Admittance spectroscopy reveals that two newly generated energy levels with the crystallization are attributed to the crystallites in the lower and upper parts of the films in view of the anisotropic crystallization. These thermally induced changes can be well explained by Si–Si shearing modes at the interfaces of crystallites through the process of crystallization.

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