P—Type Conduction of ZnO Thin Film by Codoping Technique

2008 ◽  
Author(s):  
H. Abdul Hamid ◽  
M. J. Abdullah ◽  
A. Abdul Aziz ◽  
H. B. Senin ◽  
G. Carini ◽  
...  
2006 ◽  
Vol 42 (20) ◽  
pp. 1181 ◽  
Author(s):  
S. Chakrabarti ◽  
B. Doggett ◽  
R. O'Haire ◽  
E. McGlynn ◽  
M.O. Henry ◽  
...  

2006 ◽  
Vol 21 (12) ◽  
pp. 1522-1526 ◽  
Author(s):  
Z Y Xiao ◽  
Y C Liu ◽  
B H Li ◽  
J Y Zhang ◽  
D X Zhao ◽  
...  

2014 ◽  
Vol 25 (4) ◽  
pp. 1955-1958 ◽  
Author(s):  
Hongwei Liang ◽  
Qiuju Feng ◽  
Xiaochuan Xia ◽  
Rong Li ◽  
Huiying Guo ◽  
...  

2009 ◽  
Vol 97 (3) ◽  
pp. 689-692 ◽  
Author(s):  
Manoj Kumar ◽  
Jyoti Prakash Kar ◽  
In-Soo Kim ◽  
Se-Young Choi ◽  
Jae-Min Myoung
Keyword(s):  

2007 ◽  
Vol 280-283 ◽  
pp. 315-318 ◽  
Author(s):  
Chong Liang ◽  
De An Yang ◽  
Jian Jing Song ◽  
Ming Xia Xu

Sr(NO3)2, Fe(NO3)3 and citric acid (the mole ratio was 1:1:2) were mixed in water to form sol. Alumina substrate, which had been treated by ultrasonic cleaner, were dipped in the sol and pulled out, and the coating film was heated for 1h at 900oC. Through seventeen times treatment, SrFeO3-d thin film was coated on the alumina substrate. The remainder sol was dried and heated at 400oC, 800oC, 900oC for 2 h. The thin films and the powders were characterized by XRD. The morphologies of thin films were observed by SEM. The results showed that SrFeO3-δ was formed at 900oC on alumina substrate and the grain size was 100 ~ 200 nm. The oxygen sensitivity was measured in the temperature range of 377 ~ 577oC under different oxygen partial pressures. SrFeO3-δ thin film showed p-type conduction. The response time was less than 2 min when being exposed to a change from N2 to 0.466% O2 at 377oC.


2014 ◽  
Vol 1004-1005 ◽  
pp. 784-787
Author(s):  
Ping Cao ◽  
Yue Bai

In this paper, a simple method is reported to obtain nitrogen-doped p-ZnO film. In this method NH3plasma, generated in a plasma-enhanced chemical vapor deposition system, was employed to treat ZnO thin film. By hall-effect measurement a p type conductivity was observed for the treated film with the hole density of 3.6×1016. XPS result confirmed nitrogen was incorporated into ZnO film during the treatment process to occupy the oxygen positions.


2020 ◽  
Vol 697 ◽  
pp. 137825 ◽  
Author(s):  
Toshihiro Miyata ◽  
Hiroki Tokunaga ◽  
Kyosuke Watanabe ◽  
Noriaki Ikenaga ◽  
Tadatsugu Minami

2007 ◽  
Vol 19 (8-9) ◽  
pp. 727-734 ◽  
Author(s):  
L. P. Dai ◽  
H. Deng ◽  
F. Y. Mao ◽  
J. D. Zang

2011 ◽  
Vol 11 (1) ◽  
pp. 65-69 ◽  
Author(s):  
Manoj Kumar ◽  
Jyoti Prakash Kar ◽  
In-Soo Kim ◽  
Se-Young Choi ◽  
Jae-Min Myoung

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