p-type conduction above room temperature in nitrogen-doped ZnO thin film grown by plasma-assisted pulsed laser deposition

2006 ◽  
Vol 42 (20) ◽  
pp. 1181 ◽  
Author(s):  
S. Chakrabarti ◽  
B. Doggett ◽  
R. O'Haire ◽  
E. McGlynn ◽  
M.O. Henry ◽  
...  
2016 ◽  
Vol 42 (3) ◽  
pp. 4136-4142 ◽  
Author(s):  
Woo-Seok Noh ◽  
Jung-A Lee ◽  
Joon-Hyung Lee ◽  
Young-Woo Heo ◽  
Jeong-Joo Kim

2013 ◽  
Author(s):  
Yang Zhou ◽  
Hongfang Zheng ◽  
Lei Zhang ◽  
Yingcai Peng ◽  
Qingxun Zhao ◽  
...  

2018 ◽  
Vol 123 (16) ◽  
pp. 161525 ◽  
Author(s):  
Caiqin Luo ◽  
Lok-Ping Ho ◽  
Fahad Azad ◽  
Wolfgang Anwand ◽  
Maik Butterling ◽  
...  

Author(s):  
Hiroka Abe ◽  
Shrikant Saini ◽  
Paolo Mele ◽  
Kaname Matsumoto ◽  
Harutoshi Hagino ◽  
...  

2010 ◽  
Vol 24 (28) ◽  
pp. 2785-2791
Author(s):  
J. ELANCHEZHIYAN ◽  
D. W. LEE ◽  
W. J. LEE ◽  
B. C. SHIN

p-type conduction in ZnO thin films has been realized by doping with GaN . Undoped and GaN -doped ZnO thin films were prepared by the pulsed laser deposition technique. All the grown films have been characterized by X-ray diffraction (XRD), atomic force microscopy (AFM) and Hall effect measurements in order to study their structural, morphological and electrical properties, respectively. The presence of dopants in the films has been confirmed by energy dispersive X-ray spectroscopy (EDS). XRD results reveal that the wurtzite structure deviates for the films with higher concentrations of GaN . Hall measurements show that the 5 and 10 at.% GaN -doped ZnO films have p-type conduction.


2006 ◽  
Vol 296 (2) ◽  
pp. 186-190 ◽  
Author(s):  
Jungang Zhang ◽  
Bin Li ◽  
Changtai Xia ◽  
Qun Deng ◽  
Jun Xu ◽  
...  

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