Effect of Annealing Temperature on the Surface Morphology and Electrical Properties of Aluminum Doped Zinc Oxide Thin Films Prepared by Sol-Gel Spin-Coating Method

2008 ◽  
Author(s):  
M. H. Mamat ◽  
S. Amizam ◽  
H. A. Rafaie ◽  
H. Hashim ◽  
A. Zain Ahmed ◽  
...  
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Electrical Properties ◽  
Surface Morphology ◽  
Spin Coating ◽  
Annealing Temperature ◽  
Sol Gel ◽  
Spin Coating Method ◽  
Coating Method ◽  
Aluminum Doped Zinc Oxide

Preparation of nickel oxide thin films at different annealing temperature by sol-gel spin coating method

2016 ◽  
Author(s):  
M. A. R. Abdullah ◽  
M. H. Mamat ◽  
A. S. Ismail ◽  
M. F. Malek ◽  
Salman A. H. Alrokayan ◽  
...  
Keyword(s):  
Thin Films ◽  
Nickel Oxide ◽  
Spin Coating ◽  
Annealing Temperature ◽  
Sol Gel ◽  
Oxide Thin Films ◽  
Spin Coating Method ◽  
Coating Method ◽  
Nickel Oxide Thin Films

Photoluminescence and Transparent Conductive Properties of the Al and Sb Codoped ZnO Thin Films Annealed in Different Atmospheres

2012 ◽  
Vol 457-458 ◽  
pp. 42-45
Author(s):  
Wen Wu Zhong ◽  
Fa Min Liu ◽  
Qin Yi Shi ◽  
Wei Ping Chen
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Spin Coating ◽  
Sol Gel ◽  
Zno Thin Films ◽  
Spin Coating Method ◽  
Glass Substrates ◽  
Coating Method ◽  
Hexagonal Nanorods ◽  
Conductive Properties

Al and Sb codoped ZnO thin films were prepared through a sol-gel spin coating method on glass substrates and annealed in different atmospheres. The XRD results show that the films have hexagonal wurtzite ZnO structure and SEM results reveal that the films annealed in hydrogen consist of hexagonal nanorods with diameters of 84 nm and lengths of 422 nm, however the films annealed in other atmospheres without nanorods. The photoluminescence (PL) spectrum shows that the emission peaks of the films are mostly at 390 and 460 nm, and the film annealed in hydrogen has the strongest intensity of peak at 390 nm and the film annealed in air has the strongest intensity of peak at 460 nm. The electrical properties show that the films annealed in hydrogen have a lowest resistivity of 1.02×10-3 Ω•cm.

Effects of Annealing Temperature of Indium Tin Oxide Thin Films Prepared onto Glass by Sol-Gel Spin Coating Method

2011 ◽  
Vol 343-344 ◽  
pp. 116-123
Author(s):  
Yu Ming Peng ◽  
Yan Kuin Su ◽  
Cheng Jye Chu ◽  
Ru Yuan Yang ◽  
Ruei Ming Huang
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Spin Coating ◽  
Annealing Temperature ◽  
Sol Gel ◽  
Optical And Electrical Properties ◽  
Coating Method ◽  
Ito Thin Films

In this paper, the indium tin oxide (ITO) thin films were prepared by a sol-gel spin coating method and then annealed under different temperatures (400, 500 and 550°C) in a mixture atmosphere of 3.75% H2 with 96.25% N2 gases. The microstructure, optical and electrical properties of the prepared films were investigated and discussed. The XRD patterns of the ITO thin films indicated the main peak of the (222) plane and showed a high degree of crystallinity with an increase of the annealing temperature. In addition, due to the pores existing in the prepared films, the optical and electrical properties of the prepared films are degraded through the sol-gel process. Thus, the best transmittance of 70.0 %in the visible wavelength region and the lowest resistivity of about 1.1×10-2 Ω-cm were obtained when the prepared film was annealed at 550°C.

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