Metal-oxide-semiconductor-compatible ultra-long-range surface plasmon modes

2008 ◽  
Vol 103 (11) ◽  
pp. 113106 ◽  
Author(s):  
C. G. Durfee ◽  
T. E. Furtak ◽  
R. T. Collins ◽  
R. E. Hollingsworth
Keyword(s):  
Metal Oxide ◽  
Long Range ◽  
Surface Plasmon ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Plasmon Modes

Metal-oxide-semiconductor photocapacitor for sensing surface plasmon polaritons

2015 ◽  
Author(s):  
Farnood Khalilzade-Rezaie ◽  
Robert E. Peale ◽  
Deep Panjwani ◽  
Christian W. Smith ◽  
Janardan Nath ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Surface Plasmon ◽  
Surface Plasmon Polaritons ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Plasmon Polaritons

scholarly journals Monolithic Integration of Surface Plasmon Detector and Metal–Oxide–Semiconductor Field-Effect Transistors

2013 ◽  
Vol 5 (4) ◽  
pp. 6800609-6800609 ◽  
Author(s):  
Takuma Alhara ◽  
Masashi Fukuhara ◽  
Ayumi Takeda ◽  
Byounghyun Lim ◽  
Masato Futagawa ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Surface Plasmon ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Monolithic Integration ◽  
Oxide Semiconductor

Suppression of Timing Variations due to Random Dopant Fluctuation by Back-Gate Bias in a Nanometer CMOS Inverter

2020 ◽  
Vol 13 ◽  
Author(s):  
Kai Zhang ◽  
Weifeng Lü ◽  
Peng Si ◽  
Zhifeng Zhao ◽  
Tianyu Yu
Keyword(s):  
Monte Carlo ◽  
Integrated Circuits ◽  
Metal Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Gate Bias ◽  
Cmos Inverter ◽  
Back Gate ◽  
Random Dopant Fluctuation ◽  
Random Dopant

Background: In state-of-the-art nanometer metal-oxide-semiconductor-field-effect- transistors (MOSFETs), optimization of timing characteristic is one of the major concerns in the design of modern digital integrated circuits. Objective: This study proposes an effective back-gate-biasing technique to comprehensively investigate the timing and its variation due to random dopant fluctuation (RDF) employing Monte Carlo methodology. Methods: To analyze RDF-induced timing variation in a 22-nm complementary metal-oxide semiconductor (CMOS) inverter, an ensemble of 1000 different samples of channel-doping for negative metal-oxide semiconductor (NMOS) and positive metal-oxide semiconductor (PMOS) was reproduced and the input/output curves were measured. Since back-gate bias is technology dependent, we present in parallel results with and without VBG. Results: It is found that the suppression of RDF-induced timing variations can be achieved by appropriately adopting back-gate voltage (VBG) through measurements and detailed Monte Carlo simulations. Consequently, the timing parameters and their variations are reduced and, moreover, that they are also insensitive to channel doping with back-gate bias. Conclusion: Circuit designers can appropriately use back-gate bias to minimize timing variations and improve the performance of CMOS integrated circuits.

Sign in / Sign up

Export Citation Format

Share Document