Effect of ultraviolet irradiation on electrical resistance and phase transition characteristics of thin film vanadium oxide

2008 ◽  
Vol 103 (10) ◽  
pp. 106104 ◽  
Author(s):  
Changhyun Ko ◽  
Shriram Ramanathan
Keyword(s):  
Thin Film ◽  
Phase Transition ◽  
Vanadium Oxide ◽  
Ultraviolet Irradiation ◽  
Electrical Resistance

DC Magnetron Sputtering Deposition of Room-Temperature Phase Transition Vanadium Oxide Film

2014 ◽  
Vol 1053 ◽  
pp. 332-336 ◽  
Author(s):  
Ya Qiao ◽  
Yuan Lu ◽  
Hua Yang ◽  
Yong Shun Ling
Keyword(s):  
Thin Film ◽  
Phase Transition ◽  
Magnetron Sputtering ◽  
Vanadium Oxide ◽  
Room Temperature ◽  
Annealed Film ◽  
Oxide Thin Film ◽  
Temperature Phase ◽  
Dc Magnetron Sputtering ◽  
Main Component

Low valence vanadium oxide thin film was deposited on ordinary glass substrates by direct current (DC) magnetron sputtering from a vanadium metal target. And then it was annealed in an atmosphere of oxygen/argon mixture at the temperature of 450°C for 2hours to obtain VO2thin film possessing the ability of phase transition. The XRD patterns and resistance-temperature (R-T) curves of the film before and after the annealing were given. The results show that: the as-deposited film, whose main component is V2O3, presents no phase transition and its resistance changes from 1.26 kΩ~1.01kΩ while its temperature rising from room temperature to 80°C; the annealed film, whose main component is VO2, presents a phase transition when its temperature rising from room temperature to 80°C and its resistance changes from 10kΩ to 60Ω, more than two orders. And the phase transition temperature of the film deposited is only 30°C.

Study on Electrical Properties and 1064nm Pulse Laser Damage of Vanadium Oxide Thin Film

2008 ◽  
Vol 373-374 ◽  
pp. 730-733 ◽  
Author(s):  
X.R. Chen ◽  
J.Z. Hu ◽  
Wen Zheng Han ◽  
Bin Shi Xu
Keyword(s):  
Thin Film ◽  
Phase Transition ◽  
Electrical Properties ◽  
Vanadium Oxide ◽  
Pulse Laser ◽  
Ion Beam ◽  
Oxide Thin Film ◽  
Laser Damage Threshold ◽  
Laser Damage ◽  
Vanadium Oxide Thin Film

Vanadium oxide thin film which has a reversible semiconductor-metal phase transition has been obtained by reactive ion-beam sputtering and subsequent annealing in Ar gas. Micro-analysis shows that this thin film is homogeneous and compact, its spheric grain size is about 50nm and it is composed of VO2 and V2O5. Electrical properties testing indicate that its phase transition temperature is near 60°C, abrupt change of resistivity before and after phase transition is approximate to 3 orders of magnitude, temperature coefficient of resistance (TCR) is about -0.0393K-1 at 25°C and activation energy is about 0.3006eV at the range of low temperature. Using a pulse laser beam with wavelength of 1064nm and pulse width of 10ns, laser damage threshold was obtained to be 20.1mJ/cm2. Damage spot morphology of the film was also researched carefully to discover its laser damage mechanism. All results above prove that this thin film is a perfect thermo-sensitive material that can be used for uncooled infrared detector and laser protection.

Electrical Study of Device Arrays on Thin Film Vanadium Dioxide

2006 ◽  
Vol 966 ◽  
Author(s):  
Ramesh G. Mani ◽  
S. Ramanathan ◽  
V. Narayanamurti
Keyword(s):  
Thin Film ◽  
Phase Transition ◽  
Vanadium Oxide ◽  
Vanadium Dioxide ◽  
Structural Transition ◽  
Structural Phase ◽  
Electron Beam Evaporation ◽  
Electrical Measurements ◽  
Electrical And Optical Properties ◽  
Electrical Study

ABSTRACTThe VO2 phase of vanadium oxide is known to exhibit large changes in the electrical and optical properties in the vicinity of the structural phase transition at 68C. Here, we report on the fabrication and study of thin film vanadium oxide (VO2) devices deposited on R-plane sapphire. Thin films prepared by electron beam evaporation have been processed by photolithography into two-terminal strips for electrical measurements. Measurements on such specimens exhibit reproducibility across a chip, in addition to hysteretic transport, and a one-to-two orders of magnitude change in the resistance in the vicinity of the structural transition. In sum, these experiments show that e-beam evaporation of VO2 constitutes a simple and useful approach to realizing devices from this technologically important material.

Incommensurate Phase Transition in a Thin Film

2011 ◽  
Vol 413 (1) ◽  
pp. 399-408 ◽  
Author(s):  
A. A. Mirkin ◽  
A. L. Pirozerskiĭ ◽  
E. V. Charnaya ◽  
Cheng Tien
Keyword(s):  
Thin Film ◽  
Phase Transition ◽  
Incommensurate Phase

Optical phase transition of Ge2Sb2Se4Te1 thin film using low absorption wavelength in the 1550 nm window

2021 ◽  
Vol 120 ◽  
pp. 111450
Author(s):  
S.X. Gan ◽  
C.K. Lai ◽  
W.Y. Chong ◽  
D.Y. Choi ◽  
S. Madden ◽  
...  
Keyword(s):  
Thin Film ◽  
Phase Transition ◽  
Optical Phase ◽  
Absorption Wavelength
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