Interband cascade laser emitting at λ=3.75μm in continuous wave above room temperature

2008 ◽  
Vol 92 (19) ◽  
pp. 191110 ◽  
Author(s):  
M. Kim ◽  
C. L. Canedy ◽  
W. W. Bewley ◽  
C. S. Kim ◽  
J. R. Lindle ◽  
...  
Keyword(s):  
Room Temperature ◽  
Continuous Wave ◽  
Interband Cascade Laser

scholarly journals Compact CH4 sensor system based on a continuous-wave, low power consumption, room temperature interband cascade laser

2016 ◽  
Vol 108 (1) ◽  
pp. 011106 ◽  
Author(s):  
Lei Dong ◽  
Chunguang Li ◽  
Nancy P. Sanchez ◽  
Aleksander K. Gluszek ◽  
Robert J. Griffin ◽  
...  
Keyword(s):  
Power Consumption ◽  
Low Power ◽  
Room Temperature ◽  
Continuous Wave ◽  
Sensor System ◽  
Low Power Consumption ◽  
Interband Cascade Laser

Room-temperature continuous-wave interband cascade laser emitting at 3.45 μm

2018 ◽  
Vol 27 (12) ◽  
pp. 124207 ◽  
Author(s):  
Yi Zhang ◽  
Fu-Hui Shao ◽  
Cheng-Ao Yang ◽  
Sheng-Wen Xie ◽  
Shu-Shan Huang ◽  
...  
Keyword(s):  
Room Temperature ◽  
Continuous Wave ◽  
Interband Cascade Laser

scholarly journals Room-temperature continuous-wave external cavity interband cascade laser tunable from 32 to 36 μm

2021 ◽  
Author(s):  
Etienne Giraud ◽  
Pierre demolon ◽  
Tobias Gresch ◽  
Loic Urio ◽  
Antoine Muller ◽  
...  
Keyword(s):  
Room Temperature ◽  
Continuous Wave ◽  
External Cavity ◽  
Interband Cascade Laser

scholarly journals Ppbv-Level Ethane Detection Using Quartz-Enhanced Photoacoustic Spectroscopy with a Continuous-Wave, Room Temperature Interband Cascade Laser

Sensors ◽  
2018 ◽  
Vol 18 (3) ◽  
pp. 723 ◽  
Author(s):  
Chunguang Li ◽  
Lei Dong ◽  
Chuantao Zheng ◽  
Jun Lin ◽  
Yiding Wang ◽  
...  
Keyword(s):  
Photoacoustic Spectroscopy ◽  
Room Temperature ◽  
Continuous Wave ◽  
Interband Cascade Laser

scholarly journals Roadmap of Terahertz Imaging 2021

Sensors ◽  
2021 ◽  
Vol 21 (12) ◽  
pp. 4092
Author(s):  
Gintaras Valušis ◽  
Alvydas Lisauskas ◽  
Hui Yuan ◽  
Wojciech Knap ◽  
Hartmut G. Roskos
Keyword(s):  
Room Temperature ◽  
Continuous Wave ◽  
Computational Imaging ◽  
Imaging Systems ◽  
Thz Imaging ◽  
Operational Conditions ◽  
Frequency Combs ◽  
Wave Imaging ◽  
On Chip ◽  
Nano Imaging

In this roadmap article, we have focused on the most recent advances in terahertz (THz) imaging with particular attention paid to the optimization and miniaturization of the THz imaging systems. Such systems entail enhanced functionality, reduced power consumption, and increased convenience, thus being geared toward the implementation of THz imaging systems in real operational conditions. The article will touch upon the advanced solid-state-based THz imaging systems, including room temperature THz sensors and arrays, as well as their on-chip integration with diffractive THz optical components. We will cover the current-state of compact room temperature THz emission sources, both optolectronic and electrically driven; particular emphasis is attributed to the beam-forming role in THz imaging, THz holography and spatial filtering, THz nano-imaging, and computational imaging. A number of advanced THz techniques, such as light-field THz imaging, homodyne spectroscopy, and phase sensitive spectrometry, THz modulated continuous wave imaging, room temperature THz frequency combs, and passive THz imaging, as well as the use of artificial intelligence in THz data processing and optics development, will be reviewed. This roadmap presents a structured snapshot of current advances in THz imaging as of 2021 and provides an opinion on contemporary scientific and technological challenges in this field, as well as extrapolations of possible further evolution in THz imaging.

scholarly journals Characteristics Of Room Temperature-CW Operated InGaN Multi-Quantum-Well-Structure Laser Diodes

1997 ◽  
Vol 2 ◽  
Author(s):  
Shuji Nakamura
Keyword(s):  
Quantum Well ◽  
Carrier Density ◽  
Room Temperature ◽  
Continuous Wave ◽  
Laser Diodes ◽  
Gain Coefficient ◽  
Threshold Current ◽  
Quantum Well Structure ◽  
Multi Quantum Well ◽  
Structure Laser

The continuous-wave (CW) operation of InGaN multi-quantum-well-structure laser diodes (LDs) was demonstrated at room temperature (RT) with a lifetime of 35 hours. The threshold current and the voltage of the LDs were 80 mA and 5.5 V, respectively. The threshold current density was 3.6 kA/cm2. When the temperature of the LDs was varied, large mode hopping of the emission wavelength was observed. The carrier lifetime and the threshold carrier density were estimated to be 2-10 ns and 1-2 × 1020/cm3, respectively. From the measurements of gain spectra and an external differential quantum efficiency dependence on the cavity length, the differential gain coefficient, the transparent carrier density, threshold gain and internal loss were estimated to be 5.8×10−17 cm2, 9.3×1019 cm−3, 5200 cm−1 and 43 cm−1, respectively.

Sign in / Sign up

Export Citation Format

Share Document