Morphology and electronic properties of metal organic molecular beam epitaxy grown ZnO on hydrogen passivated 6H-SiC(0001)

2008 ◽  
Vol 103 (10) ◽  
pp. 103720 ◽  
Author(s):  
Stefan Andres ◽  
Christian Pettenkofer ◽  
Florian Speck ◽  
Thomas Seyller
Keyword(s):  
Molecular Beam Epitaxy ◽  
Electronic Properties ◽  
Molecular Beam ◽  
Metal Organic

Low-Angle-Incidence Microchannel Epitaxy of $a$-Plane GaN Grown by Ammonia-Based Metal–Organic Molecular Beam Epitaxy

2012 ◽  
Vol 5 (4) ◽  
pp. 045501 ◽  
Author(s):  
Chia-Hung Lin ◽  
Shota Uchiyama ◽  
Takahiro Maruyama ◽  
Shigeya Naritsuka
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Metal Organic

Low angle incidence microchannel epitaxy of GaN grown by ammonia-based metal–organic molecular beam epitaxy

2011 ◽  
Vol 318 (1) ◽  
pp. 446-449 ◽  
Author(s):  
Chia-Hung Lin ◽  
Ryota Abe ◽  
Takahiro Maruyama ◽  
Shigeya Naritsuka
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Metal Organic

Characterization and process effects of HfO2 thin films grown by metal-organic molecular beam epitaxy

2005 ◽  
Vol 123 (1) ◽  
pp. 20-30 ◽  
Author(s):  
Myoung-Seok Kim ◽  
Young-Don Ko ◽  
Minseong Yun ◽  
Jang-Hyuk Hong ◽  
Min-Chang Jeong ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Process Effects ◽  
Metal Organic

scholarly journals Growth of Catalyst-Free Hexagonal Pyramid-Like InN Nanocolumns on Nitrided Si(111) Substrates via Radio-Frequency Metal–Organic Molecular Beam Epitaxy

Crystals ◽  
2019 ◽  
Vol 9 (6) ◽  
pp. 291 ◽  
Author(s):  
Wei-Chun Chen ◽  
Tung-Yuan Yu ◽  
Fang-I Lai ◽  
Hung-Pin Chen ◽  
Yu-Wei Lin ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Molecular Beam Epitaxy ◽  
Radio Frequency ◽  
Molecular Beam ◽  
Chemical Properties ◽  
Rf Plasma ◽  
Transmission Electron Microscopy Analysis ◽  
Organic Precursor ◽  
Metal Organic ◽  
Hexagonal Pyramid

Hexagonal pyramid-like InN nanocolumns were grown on Si(111) substrates via radio-frequency (RF) metal–organic molecular beam epitaxy (MOMBE) together with a substrate nitridation process. The metal–organic precursor served as a group-III source for the growth of InN nanocolumns. The nitridation of Si(111) under flowing N2 RF plasma and the MOMBE growth of InN nanocolumns on the nitrided Si(111) substrates were investigated along with the effects of growth temperature on the structural, optical, and chemical properties of the InN nanocolumns. Based on X-ray diffraction analysis, highly <0001>-oriented, hexagonal InN nanocolumns were grown on the nitride Si(111) substrates. To evaluate the alignment of arrays, the deviation angles of the InN nanocolumns were measured using scanning electron microscopy. Transmission electron microscopy analysis indicated that the InN nanocolumns were single-phase wurtzite crystals having preferred orientations along the c-axis. Raman spectroscopy confirmed the hexagonal structures of the deposited InN nanocolumns.

Temperature dependence of selective growth of GaN by ammonia-based metal-organic molecular beam epitaxy

2011 ◽  
Vol 318 (1) ◽  
pp. 450-453 ◽  
Author(s):  
Chia-Hung Lin ◽  
Ryota Abe ◽  
Takahiro Maruyama ◽  
Shigeya Naritsuka
Keyword(s):  
Molecular Beam Epitaxy ◽  
Temperature Dependence ◽  
Molecular Beam ◽  
Selective Growth ◽  
Metal Organic

Fundamentals, Material Properties and Device Performances in GaN MBE using On-Surface Cracking of Ammonia

1997 ◽  
Vol 2 ◽  
Author(s):  
Markus Kamp ◽  
M. Mayer ◽  
A. Pelzmann ◽  
K. J. Ebeling
Keyword(s):  
Molecular Beam Epitaxy ◽  
Material Properties ◽  
Molecular Beam ◽  
Group Iii Nitrides ◽  
Group Iii ◽  
Surface Cracking ◽  
Organic Vapor ◽  
N Doping ◽  
Metal Organic ◽  
Uv Leds

Ammonia is investigated as nitrogen precursor for molecular beam epitaxy of group III nitrides. With the particular on-surface cracking approach, NH3 is dissociated directly on the growing surface. By this technique, molecular beam epitaxy becomes a serious competitor to metal organic vapor phase epitaxy. Thermodynamic calculations as well as experimental results reveal insights into the growth mechanisms and its differences to the conventional plasma approach. With this knowledge, homoepitaxially GaN can be grown with record linewidths of 0.5 meV in photoluminescence (4 K). GaN layers on c-plane sapphire also reveal reasonable material properties (photoluminescence linewidth 5 meV, n ≈ 1017 cm−3, μ ≈ 220 cm2/Vs). Beside GaN growth, p- and n-doping of GaN as well as the growth of ternary nitrides are discussed. Using the presented ammonia approach UV-LEDs emitting at 370 nm with linewidths as narrow as 12 nm have been achieved.

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