Deposition of oxide films by metal-organic molecular-beam epitaxy

1990 ◽  
Vol 8 (2) ◽  
pp. 327 ◽  
Author(s):  
J. P. Bade
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Oxide Films ◽  
Metal Organic

Low-Angle-Incidence Microchannel Epitaxy of $a$-Plane GaN Grown by Ammonia-Based Metal–Organic Molecular Beam Epitaxy

2012 ◽  
Vol 5 (4) ◽  
pp. 045501 ◽  
Author(s):  
Chia-Hung Lin ◽  
Shota Uchiyama ◽  
Takahiro Maruyama ◽  
Shigeya Naritsuka
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Metal Organic

Low angle incidence microchannel epitaxy of GaN grown by ammonia-based metal–organic molecular beam epitaxy

2011 ◽  
Vol 318 (1) ◽  
pp. 446-449 ◽  
Author(s):  
Chia-Hung Lin ◽  
Ryota Abe ◽  
Takahiro Maruyama ◽  
Shigeya Naritsuka
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Metal Organic

Characterization and process effects of HfO2 thin films grown by metal-organic molecular beam epitaxy

2005 ◽  
Vol 123 (1) ◽  
pp. 20-30 ◽  
Author(s):  
Myoung-Seok Kim ◽  
Young-Don Ko ◽  
Minseong Yun ◽  
Jang-Hyuk Hong ◽  
Min-Chang Jeong ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Process Effects ◽  
Metal Organic

scholarly journals Growth of Catalyst-Free Hexagonal Pyramid-Like InN Nanocolumns on Nitrided Si(111) Substrates via Radio-Frequency Metal–Organic Molecular Beam Epitaxy

Crystals ◽  
2019 ◽  
Vol 9 (6) ◽  
pp. 291 ◽  
Author(s):  
Wei-Chun Chen ◽  
Tung-Yuan Yu ◽  
Fang-I Lai ◽  
Hung-Pin Chen ◽  
Yu-Wei Lin ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Molecular Beam Epitaxy ◽  
Radio Frequency ◽  
Molecular Beam ◽  
Chemical Properties ◽  
Rf Plasma ◽  
Transmission Electron Microscopy Analysis ◽  
Organic Precursor ◽  
Metal Organic ◽  
Hexagonal Pyramid

Hexagonal pyramid-like InN nanocolumns were grown on Si(111) substrates via radio-frequency (RF) metal–organic molecular beam epitaxy (MOMBE) together with a substrate nitridation process. The metal–organic precursor served as a group-III source for the growth of InN nanocolumns. The nitridation of Si(111) under flowing N2 RF plasma and the MOMBE growth of InN nanocolumns on the nitrided Si(111) substrates were investigated along with the effects of growth temperature on the structural, optical, and chemical properties of the InN nanocolumns. Based on X-ray diffraction analysis, highly <0001>-oriented, hexagonal InN nanocolumns were grown on the nitride Si(111) substrates. To evaluate the alignment of arrays, the deviation angles of the InN nanocolumns were measured using scanning electron microscopy. Transmission electron microscopy analysis indicated that the InN nanocolumns were single-phase wurtzite crystals having preferred orientations along the c-axis. Raman spectroscopy confirmed the hexagonal structures of the deposited InN nanocolumns.

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