Room temperature operated 3.1μm type-I GaSb-based diode lasers with 80mW continuous-wave output power

2008 ◽  
Vol 92 (17) ◽  
pp. 171111 ◽  
Author(s):  
L. Shterengas ◽  
G. Belenky ◽  
G. Kipshidze ◽  
T. Hosoda
Keyword(s):  
Output Power ◽  
Room Temperature ◽  
Continuous Wave ◽  
Diode Lasers ◽  
Type I ◽  
Continuous Wave Output Power

Distributed feedback 3.27 µm diode lasers with continuous‐wave output power above 15 mW at room temperature

2014 ◽  
Vol 50 (19) ◽  
pp. 1378-1380 ◽  
Author(s):  
R. Liang ◽  
T. Hosoda ◽  
L. Shterengas ◽  
A. Stein ◽  
M. Lu ◽  
...  
Keyword(s):  
Output Power ◽  
Room Temperature ◽  
Continuous Wave ◽  
Diode Lasers ◽  
Distributed Feedback ◽  
Continuous Wave Output Power

Room temperature operated diffraction limited λ ≃ 3 µm diode lasers with 37 mW of continuous‐wave output power

2013 ◽  
Vol 49 (10) ◽  
pp. 667-669 ◽  
Author(s):  
T. Hosoda ◽  
R. Liang ◽  
G. Kipshidze ◽  
L. Shterengas ◽  
G. Belenky
Keyword(s):  
Output Power ◽  
Room Temperature ◽  
Continuous Wave ◽  
Diode Lasers ◽  
Continuous Wave Output Power

Chromium-doped forsterite laser with 11 W of continuous-wave output power at room temperature

1997 ◽  
Vol 36 (33) ◽  
pp. 8601 ◽  
Author(s):  
Nickolay Zhavoronkov ◽  
Aleksander Avtukh ◽  
Victor Mikhailov
Keyword(s):  
Output Power ◽  
Room Temperature ◽  
Continuous Wave ◽  
Continuous Wave Output Power

scholarly journals High continuous wave output power InGaAs/InGaAsP/InGaP diode lasers: Effect of substrate misorientation

1995 ◽  
Vol 67 (20) ◽  
pp. 2901-2903 ◽  
Author(s):  
L. J. Mawst ◽  
A. Bhattacharya ◽  
M. Nesnidal ◽  
J. Lopez ◽  
D. Botez ◽  
...  
Keyword(s):  
Output Power ◽  
Continuous Wave ◽  
Diode Lasers ◽  
Continuous Wave Output Power

MID-INFRARED GaSb-BASED LASERS WITH TYPE-I HETEROINTERFACES

2002 ◽  
Vol 12 (04) ◽  
pp. 1025-1038 ◽  
Author(s):  
D. V. DONETSKY ◽  
R. U. MARTINELLI ◽  
G. L. BELENKY
Keyword(s):  
High Power ◽  
Room Temperature ◽  
Continuous Wave ◽  
Diode Lasers ◽  
Current Mode ◽  
Pulsed Current ◽  
Device Performance ◽  
Type I ◽  
Mid Infrared ◽  
Double Heterojunction

The design of room-temperature, InGaAsSb/AlGaAsSb diode lasers has evolved from the first double-heterojunction lasers described in 1980 that operated in the pulsed-current mode to present-day continuous–wave (CW), high-power, quantum–well diode lasers. We discuss in detail recent results from type-I-heterostructure, GaSb-based CW room-temperature diode lasers. The devices operate within the wavelength range of 1.8 to 2.7 μm, providing output powers up to several Watts. We analyze the factors limiting device performance.

Diode lasers emitting at 3 [micro sign]m with 300 mW of continuous-wave output power

2009 ◽  
Vol 45 (18) ◽  
pp. 942 ◽  
Author(s):  
L. Shterengas ◽  
G. Kipshidze ◽  
T. Hosoda ◽  
J. Chen ◽  
G. Belenky
Keyword(s):  
Output Power ◽  
Continuous Wave ◽  
Diode Lasers ◽  
Continuous Wave Output Power
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