A fast ramp rate thermally stimulated current technique to quantify electronic charge dynamics in thin films

2008 ◽  
Vol 79 (4) ◽  
pp. 043906 ◽  
Author(s):  
Connie Lew ◽  
Michael O. Thompson
Keyword(s):  
Thin Films ◽  
Electronic Charge ◽  
Ramp Rate ◽  
Thermally Stimulated Current ◽  
Charge Dynamics ◽  
Current Technique

ASSESSMENT OF ELECTRICALLY ACTIVE DEFECT PARAMETERS IN POLYARYLENPHTHALIDES

2021 ◽  
Vol 0 (1) ◽  
pp. 75-80
Author(s):  
A.V. MOSHELEV ◽  
◽  
A.F. PONOMAREV ◽  
S.N. SALAZKIN ◽  
V.V. SHAPOSHNIKOVA ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermally Stimulated Current ◽  
Chemical Structures ◽  
Active Defect ◽  
Trapping State

Trapping state parameters in thin films of polyarylenephthalide polymers with different chemical structures were studied using the thermally stimulated current (TSC) method. As the objects of our research we used polyarylenephthalide polymers - polydiphenylphthalide (PDP) [1] and phthalide-based statistical co-polyarylene ether ketones (co-PAEK) [2]. It was revealed in the paper that the energy of trapping state activation essentially depends on the concentration of phhalide-containing fragments.

scholarly journals Impact of process conditions on chemical solution deposited BNKT thin film electromechanical properties

2021 ◽  
Vol 3 (10) ◽  
Author(s):  
Kyle M. Grove ◽  
Austin Fox ◽  
David P. Cann ◽  
Song Won Ko ◽  
Peter Mardilovich ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Dielectric Constant ◽  
Dielectric Loss ◽  
Pyrolysis Temperature ◽  
Piezoelectric Response ◽  
Excess Properties ◽  
Process Conditions ◽  
Chemical Solution ◽  
Ramp Rate

Abstract Phase pure perovskite (1-x)Bi1/2Na1/2TiO3 – xBi1/2K1/2TiO3 (BNKT) thin films were successfully prepared via an inverse mixing order chemical solution deposition method and the impact of process conditions on film properties were observed. Process conditions evaluated included crystallization temperature and time, ramp rate, pyrolysis temperature, and cation excess. Properties measured included crystal structure, dielectric constant, dielectric loss, piezoelectric response, and ferroelectric response. A few notable trends were observed. A subtle impact on piezoelectric response was observed in films prepared using different ramp rates: 100 C per second films (d33,f = 60 ± 5 pm/V at 1 kHz), 75 °C per second films (d33,f = 55 ± 5 pm/V) and 150 C per second films (d33,f = 50 ± 5 pm/V). Films prepared using a 75 °C per second ramp rate displayed slightly higher dielectric loss (tan δ = 0.09 at 1 kHz) than films prepared using a 100 °C per second ramp rate (tan δ = 0.07 at 1 kHz) or 150 °C per second ramp rate (tan δ = 0.05 at 1 kHz). Pyrolysis temperatures greater than 350 °C are necessary to burn off organics and maximize film dielectric constant. Dielectric constant increased from 450 ± 50 at 1 kHz to 600 ± 50 at 1 kHz by increasing pyrolysis temperature from 300 to 400 °C. Excess cation amounts (for compositional control) were also evaluated and it was found films with higher amounts of Na and K excess compared to bismuth excess displayed an increase in d33,f of about 10 pm/V compared to films prepared with equivalent Bi and Na and K excess amounts. Article highlights Impact of processing conditions on inverse mixing order chemical solution deposited bismuth based thin films. Dielectric, piezoelectric, and ferroelectric properties of thin film bismuth sodium titanate-bismuth potassium titanate thin films. Developing lead-free piezoelectric actuator materials.

Shallow Dopant and Surface Levels in 6H-SiC MOS Structures Studied by Thermally Stimulated Current Technique

2001 ◽  
Vol 353-356 ◽  
pp. 479-482 ◽  
Author(s):  
V.S. Lysenko ◽  
I.P. Osiyuk ◽  
T.E. Rudenko ◽  
I.P. Tyagulski ◽  
Einar Ö. Sveinbjörnsson ◽  
...  
Keyword(s):  
Thermally Stimulated Current ◽  
Current Technique ◽  
Mos Structures
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