Advanced x-ray stress analysis method for a single crystal using different diffraction plane families

2008 ◽  
Vol 92 (23) ◽  
pp. 231903 ◽  
Author(s):  
Muneyuki Imafuku ◽  
Hiroshi Suzuki ◽  
Kazuyuki Sueyoshi ◽  
Koichi Akita ◽  
Shin-ichi Ohya
2003 ◽  
Vol 18 (2) ◽  
pp. 178-178
Author(s):  
R. Yokoyama ◽  
J. Harada ◽  
K. Tanaka

2014 ◽  
Vol 783-786 ◽  
pp. 2103-2108 ◽  
Author(s):  
Toshihiko Sasaki

Measuring theory of two types of X-ray stress analysis method was compared with each other. One is the conventional method, in which zero-or one-dimensional detector is used for obtaining diffracted beam and stress is determined using the standard sin2ψ method. Another is the new type of X-ray stress analysis method, in which two-dimensional detector is used to obtain whole Debye ring and stress is determined using the cosα method. An experiment was conducted to investigate the validity.


2006 ◽  
Vol 2006 (0) ◽  
pp. 565-566
Author(s):  
Kazuyuki SUEYOSHI ◽  
Hiroshi SUZUKI ◽  
Koichi AKITA ◽  
Muneyuki IMAFUKU ◽  
Shin-ichi OHYA

2011 ◽  
Vol 1282 ◽  
Author(s):  
Yukako Kato ◽  
Hitoshi Umezawa ◽  
Hirotaka Yamaguchi ◽  
Tokuyuki Teraji ◽  
Shin-ichi Shikata

ABSTRACTSemiconductor epitaxial CVD single crystal diamond is considered a potential material for power devices because of its unique characteristics. In the discussion on the relationship between crystal quality and device performance, the atomic purity and defect concentration have been considered; however, the information on the local stress-strain distribution in a single crystal is not sufficient. In this paper, the dislocation analysis is shown for the suggestion of the established standard dislocation analysis method. The aggregation of mixed dislocations is observed by the analysis by using the birefringence image, cathodoluminescence image and x-ray topography.


2015 ◽  
Vol 1084 ◽  
pp. 107-110 ◽  
Author(s):  
Vahan Kocharian ◽  
Artak Mkrtchyan ◽  
Aleksey Gogolev ◽  
Sargis Khlopuzyan ◽  
Poghos Grigoryan

In order to gain control over hard X-ray (over 30 keV), we have considered the X-ray diffraction in Laue geometry (over 30 keV) from a single crystal of quartz influenced by the temperature gradient. It was experimentally proved that the intensity of the reflected beam can be increased up to 35 times if the X-ray energies are 30 keV and keV for reflecting atomic planes () depending on the value of the temperature gradient. As the temperature gradient increases, the focus moves closer to the crystal and the focal spot shrinks in the diffraction plane.


2006 ◽  
Vol 56 (3) ◽  
pp. 208-213 ◽  
Author(s):  
M. Qin ◽  
D.Y. Ju ◽  
Y.N. Wu ◽  
C. Sun ◽  
J.B. Li

2019 ◽  
Vol 52 (1) ◽  
pp. 94-105 ◽  
Author(s):  
Manuela Klaus ◽  
Christoph Genzel

In this paper two evaluation methods for X-ray stress analysis by means of energy-dispersive diffraction are reassessed. Both are based on the sin2ψ measuring technique. Advantage is taken of the fact that the d ψ hkl –sin2ψ data obtained for the individual diffraction lines E hkl not only contain information about the depth and orientation dependence of the residual stresses, but also reflect the single-crystal elastic anisotropy of the material. With simulated examples, it is demonstrated that even steep residual stress gradients could be determined from sin2ψ measurements that are performed up to maximum tilt angles of about 45°, since the d ψ hkl –sin2ψ distributions remain almost linear within this ψ range. This leads to a significant reduction of the measuring effort and also makes more complex component geometries accessible for X-ray stress analysis. Applying the modified multi-wavelength plot method for data analysis, it turns out that a plot of the stress data obtained for each reflection hkl by linear regression versus the maximum information depth τψ=0 hkl results in a discrete depth distribution which coincides with the actual Laplace space stress depth profile σ(τ). The sensitivity of the residual stress depth profiles σ(τψ=0 hkl ) to the diffraction elastic constants ½S 2 hkl used in the sin2ψ analysis can be exploited to refine the grain-interaction model itself. With respect to the universal plot method the stress factors F ij which reflect the material's anisotropy on both the microscopic scale (single-crystal elastic anisotropy) and the macroscopic scale (anisotropy of the residual stress state) are used as driving forces to refine the strain-free lattice parameter a 0 during the evaluation procedure.


1987 ◽  
Vol 31 ◽  
pp. 213-222
Author(s):  
Yasuo Yoshioka ◽  
Hisaaki Matsui

In the field of X-ray stress analysis, a diffraction plane at a high Bragg angle region has to be selected in order to determine the precise value of stress. But stress analysis using a most desired (hkl)- plane is not always possible. The use of synchrotron radiation (SR) enables the stress analysis using many (hkl)-planes with high accuracy by providing a perfectly monochromaticed X-ray beam having an optional wave length. Such features of SR ate most suitable for the stress analysis on materials having preferred orientation.


2004 ◽  
Vol 2004.1 (0) ◽  
pp. 251-252
Author(s):  
H. Suzuki ◽  
T. Shobu ◽  
M. Hataya ◽  
A. Moriai ◽  
J. Mizuki ◽  
...  

Author(s):  
J. M. Galbraith ◽  
L. E. Murr ◽  
A. L. Stevens

Uniaxial compression tests and hydrostatic tests at pressures up to 27 kbars have been performed to determine operating slip systems in single crystal and polycrystal1ine beryllium. A recent study has been made of wave propagation in single crystal beryllium by shock loading to selectively activate various slip systems, and this has been followed by a study of wave propagation and spallation in textured, polycrystal1ine beryllium. An alteration in the X-ray diffraction pattern has been noted after shock loading, but this alteration has not yet been correlated with any structural change occurring during shock loading of polycrystal1ine beryllium.This study is being conducted in an effort to characterize the effects of shock loading on textured, polycrystal1ine beryllium. Samples were fabricated from a billet of Kawecki-Berylco hot pressed HP-10 beryllium.


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