Enhancing the quantum efficiency of InGaN green light-emitting diodes by trimethylindium treatment

2008 ◽  
Vol 92 (16) ◽  
pp. 161113 ◽  
Author(s):  
Hung-Cheng Lin ◽  
Ruo-Syuan Lin ◽  
Jen-Inn Chyi
Keyword(s):  
Quantum Efficiency ◽  
Light Emitting Diodes ◽  
Green Light ◽  
Light Emitting

New Results on Electroluminescence from Porous Silicon

1992 ◽  
Vol 283 ◽  
Author(s):  
Peter Steiner ◽  
Frank Kozlowski ◽  
Hermann Sandmaier ◽  
Walter Lang
Keyword(s):  
Porous Silicon ◽  
Quantum Efficiency ◽  
Light Emitting Diodes ◽  
Uv Light ◽  
Green Light ◽  
Light Emitting ◽  
Porous Region ◽  
First Results

ABSTRACTFirst results on light emitting diodes in porous silicon were reported in 1991. They showed a quantum efficiency of 10-7 to 10-5 and an orange spectrum. Over the last year some progress was achieved:- By applying UV-light during the etching blue and green light emitting diodes in porous silicon are fabricated.- When a p/n junction is realized within the porous region, a quantum efficiency of 10-4 is obtained.

Optimization scheme for the quantum efficiency of GaInN-based green-light-emitting diodes

2006 ◽  
Vol 88 (7) ◽  
pp. 071105 ◽  
Author(s):  
D. Fuhrmann ◽  
C. Netzel ◽  
U. Rossow ◽  
A. Hangleiter ◽  
G. Ade ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
Light Emitting Diodes ◽  
Green Light ◽  
Optimization Scheme ◽  
Light Emitting

Enhancing the quantum efficiency of InGaN yellow-green light-emitting diodes by growth interruption

2014 ◽  
Vol 105 (7) ◽  
pp. 071108 ◽  
Author(s):  
Chunhua Du ◽  
Ziguang Ma ◽  
Junming Zhou ◽  
Taiping Lu ◽  
Yang Jiang ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
Light Emitting Diodes ◽  
Green Light ◽  
Light Emitting ◽  
Growth Interruption
Sign in / Sign up

Export Citation Format

Share Document