Properties of InAs metal-oxide-semiconductor structures with atomic-layer-deposited Al2O3 Dielectric

2008 ◽  
Vol 92 (14) ◽  
pp. 143507 ◽  
Author(s):  
Ning Li ◽  
Eric S. Harmon ◽  
James Hyland ◽  
David B. Salzman ◽  
T. P. Ma ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Atomic Layer ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Semiconductor Structures

Trap states in AlGaN/GaN metal-oxide-semiconductor structures with Al2O3 prepared by atomic layer deposition

2010 ◽  
Vol 107 (10) ◽  
pp. 106104 ◽  
Author(s):  
D. Gregušová ◽  
R. Stoklas ◽  
Ch. Mizue ◽  
Y. Hori ◽  
J. Novák ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Metal Oxide ◽  
Atomic Layer ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Trap States ◽  
Semiconductor Structures ◽  
Layer Deposition

Impact of atomic-layer-deposited TiN on the gate oxide quality of W/TiN/SiO2/Si metal–oxide–semiconductor structures

2002 ◽  
Vol 80 (14) ◽  
pp. 2514-2516 ◽  
Author(s):  
Dae-Gyu Park ◽  
Kwan-Yong Lim ◽  
Heung-Jae Cho ◽  
Tae-Ho Cha ◽  
In-Seok Yeo ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Atomic Layer ◽  
Gate Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Semiconductor Structures
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