Defect reduction in GaN/(0001)sapphire films grown by molecular beam epitaxy using nanocolumn intermediate layers

2008 ◽  
Vol 92 (12) ◽  
pp. 121902 ◽  
Author(s):  
D. Cherns ◽  
L. Meshi ◽  
I. Griffiths ◽  
S. Khongphetsak ◽  
S. V. Novikov ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Defect Reduction ◽  
Intermediate Layers

Microstructural defect reduction in HgCdTe grown by photoassisted molecular‐beam epitaxy

1990 ◽  
Vol 8 (2) ◽  
pp. 1013-1019 ◽  
Author(s):  
K. A. Harris ◽  
T. H. Myers ◽  
R. W. Yanka ◽  
L. M. Mohnkern ◽  
R. W. Green ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Defect Reduction ◽  
Microstructural Defect

scholarly journals Defect reduction with quantum dots in GaN grown on sapphire substrates by molecular beam epitaxy

2002 ◽  
Vol 80 (2) ◽  
pp. 216-218 ◽  
Author(s):  
D. Huang ◽  
M. A. Reshchikov ◽  
F. Yun ◽  
T. King ◽  
A. A. Baski ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Defect Reduction ◽  
Sapphire Substrates

scholarly journals Defect reduction in ZnSe grown by molecular beam epitaxy on GaAs substrates cleaned using atomic hydrogen

1996 ◽  
Vol 69 (1) ◽  
pp. 82-84 ◽  
Author(s):  
Zhonghai Yu ◽  
S. L. Buczkowski ◽  
N. C. Giles ◽  
T. H. Myers
Keyword(s):  
Molecular Beam Epitaxy ◽  
Atomic Hydrogen ◽  
Molecular Beam ◽  
Defect Reduction ◽  
Gaas Substrates

Improvement of Crystal Quality of RF-Plasma-Assisted Molecular Beam Epitaxy Grown Ga-Polarity GaN by High-Temperature Grown AlN Multiple Intermediate Layers

2000 ◽  
Vol 39 (Part 2, No. 4B) ◽  
pp. L330-L333 ◽  
Author(s):  
Akihiko Kikuchi ◽  
Takayuki Yamada ◽  
Shinichi Nakamura ◽  
Kazuhide Kusakabe ◽  
Daisuke Sugihara ◽  
...  
Keyword(s):  
High Temperature ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Crystal Quality ◽  
Rf Plasma ◽  
Intermediate Layers

Polarity control of ZnO films grown with high temperature N-polar GaN intermediate layers by plasma-assisted molecular beam epitaxy

2004 ◽  
Vol 241 (12) ◽  
pp. 2835-2838 ◽  
Author(s):  
O. H. Roh ◽  
Y. Tomita ◽  
M. Ohsugi ◽  
X. Wang ◽  
Y. Ishitani ◽  
...  
Keyword(s):  
High Temperature ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Zno Films ◽  
Intermediate Layers

Effect of High Temperature Single and Multiple AlN Intermediate Layers on N-polar and Ga-polar GaN Grown by Molecular Beam Epitaxy

2001 ◽  
Vol 693 ◽  
Author(s):  
F. Fedler ◽  
J. Stemmer ◽  
R. J. Hauenstein ◽  
T. Rotter ◽  
A. M. Sanchez ◽  
...  
Keyword(s):  
High Temperature ◽  
Molecular Beam Epitaxy ◽  
Electron Mobility ◽  
Molecular Beam ◽  
Threading Dislocation ◽  
Electrical Measurements ◽  
Force Microscopy ◽  
Atomic Force ◽  
Intermediate Layers ◽  
Transmission Electron

AbstractWurtzite GaN samples containing one, three and five 4nm thick high temperature (HT) AlN Interlayers (IL) have been grown on (0001) sapphire substrates by plasma-assisted molecular beam epitaxy (PAMBE). N-polar as well as Ga-polar thin films have been characterized by x-ray diffraction (XRD), atomic force microscopy (AFM), transmission electron microscopy (TEM), and electrical measurements.All samples under consideration show excellent AFM rms surface roughness below 1nm. Previously, we published a reduction of the threading dislocation (TD) density by a factor of seven due to the introduction of one AlN-IL. When introducing multiple AlN-IL a reduction by a factor of 5.2 is achieved.Hall measurements show a rise in electron mobility due to possible 2DEG formation at the interface between GaN and the AlN-ILs. Significant growth mode differences between Ga-polar and N-polar samples result in drastically higher electron mobility values for N-polar material. For N-polar samples the exceptional mobility increase from 68 (no AlN-IL) to 707 cm2/Vs (one AlN-IL) as well as the extremely low intrinsic carrier density of 1 x 1017 cm-3 prove the applicability of AlN barriers in inverted FET devices.

Defect reduction in GaAs grown by molecular beam epitaxy using different superlattice structures

1986 ◽  
Vol 49 (15) ◽  
pp. 942-944 ◽  
Author(s):  
S. M. Bedair ◽  
T. P. Humphreys ◽  
N. A. El‐Masry ◽  
Y. Lo ◽  
N. Hamaguchi ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Defect Reduction ◽  
Superlattice Structures

Epitaxial Growth and Magnetic Properties of Ferromagnetic Fe3N on Si(111) by Molecular Beam Epitaxy Using AlN/3C-SiC Intermediate Layers

2006 ◽  
Vol 45 (No. 27) ◽  
pp. L705-L707 ◽  
Author(s):  
Kimiaki Yamaguchi ◽  
Tatsuya Yui ◽  
Yoshitake Ichikawa ◽  
Kazuhiro Yamaki ◽  
Itsuhiro Kakeya ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Intermediate Layers
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