Polarity control of ZnO films grown with high temperature N-polar GaN intermediate layers by plasma-assisted molecular beam epitaxy

2004 ◽  
Vol 241 (12) ◽  
pp. 2835-2838 ◽  
Author(s):  
O. H. Roh ◽  
Y. Tomita ◽  
M. Ohsugi ◽  
X. Wang ◽  
Y. Ishitani ◽  
...  
Keyword(s):  
High Temperature ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Zno Films ◽  
Intermediate Layers

Improvement of Crystal Quality of RF-Plasma-Assisted Molecular Beam Epitaxy Grown Ga-Polarity GaN by High-Temperature Grown AlN Multiple Intermediate Layers

2000 ◽  
Vol 39 (Part 2, No. 4B) ◽  
pp. L330-L333 ◽  
Author(s):  
Akihiko Kikuchi ◽  
Takayuki Yamada ◽  
Shinichi Nakamura ◽  
Kazuhide Kusakabe ◽  
Daisuke Sugihara ◽  
...  
Keyword(s):  
High Temperature ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Crystal Quality ◽  
Rf Plasma ◽  
Intermediate Layers

Effect of High Temperature Single and Multiple AlN Intermediate Layers on N-polar and Ga-polar GaN Grown by Molecular Beam Epitaxy

2001 ◽  
Vol 693 ◽  
Author(s):  
F. Fedler ◽  
J. Stemmer ◽  
R. J. Hauenstein ◽  
T. Rotter ◽  
A. M. Sanchez ◽  
...  
Keyword(s):  
High Temperature ◽  
Molecular Beam Epitaxy ◽  
Electron Mobility ◽  
Molecular Beam ◽  
Threading Dislocation ◽  
Electrical Measurements ◽  
Force Microscopy ◽  
Atomic Force ◽  
Intermediate Layers ◽  
Transmission Electron

AbstractWurtzite GaN samples containing one, three and five 4nm thick high temperature (HT) AlN Interlayers (IL) have been grown on (0001) sapphire substrates by plasma-assisted molecular beam epitaxy (PAMBE). N-polar as well as Ga-polar thin films have been characterized by x-ray diffraction (XRD), atomic force microscopy (AFM), transmission electron microscopy (TEM), and electrical measurements.All samples under consideration show excellent AFM rms surface roughness below 1nm. Previously, we published a reduction of the threading dislocation (TD) density by a factor of seven due to the introduction of one AlN-IL. When introducing multiple AlN-IL a reduction by a factor of 5.2 is achieved.Hall measurements show a rise in electron mobility due to possible 2DEG formation at the interface between GaN and the AlN-ILs. Significant growth mode differences between Ga-polar and N-polar samples result in drastically higher electron mobility values for N-polar material. For N-polar samples the exceptional mobility increase from 68 (no AlN-IL) to 707 cm2/Vs (one AlN-IL) as well as the extremely low intrinsic carrier density of 1 x 1017 cm-3 prove the applicability of AlN barriers in inverted FET devices.

Formation and Structure of Thin Mo Layers and Mo-Ni Multilayers on Ni(001) by Molecular Beam Epitaxy

1989 ◽  
Vol 160 ◽  
Author(s):  
Y.H. Lee ◽  
R.P. Burns ◽  
J.B. Posthill ◽  
K.J. Bachmann
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
High Resolution ◽  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Nucleation And Growth ◽  
Multilayer Heterostructures ◽  
Annealing Experiments ◽  
Small Period

AbstractThe growth of Mo overtayers and Mo-Ni multilayers on single crystal Ni(001) substrates is described. The nucleation and growth processes of these thin films were analyzed by LEED, XPS, AES and SEM and High Resolution AES investigations without breaking vacuum. Growth of Mo-Ni multilayer heterostructures on Ni(001) with ≈20Å periodicity is possible at low temperature (≈200 °C). At high temperature (≈550 °C) the growth proceeds by the Volmer-Weber mechanism preventing the deposition of small period multilayers. Annealing experiments on ultra-thin (<20Å) Mo overiayers deposited at 200 °C show an onset of interdiffusion at ≈ 550°C coupled to the generation of a new surface periodicity.

Growth of Undoped ZnO Films with Improved Electrical Properties by Radical Source Molecular Beam Epitaxy

2001 ◽  
Vol 40 (Part 1, No. 1) ◽  
pp. 250-254 ◽  
Author(s):  
Ken Nakahara ◽  
Tetsuhiro Tanabe ◽  
Hidemi Takasu ◽  
Paul Fons ◽  
Kakuya Iwata ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Zno Films

Homo- and Hetero-Epitaxial Gallium Nitride Grown by Molecular Beam Epitaxy

1998 ◽  
Vol 537 ◽  
Author(s):  
C.T. Foxon ◽  
T.S. Cheng ◽  
D. Korakakis ◽  
S.V. Novikov ◽  
R.P. Campion ◽  
...  
Keyword(s):  
High Temperature ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Defect Density ◽  
Boundary Structure ◽  
Quantum Well Structures ◽  
Flat Surfaces ◽  
Grain Boundary Structure ◽  
Bulk Gan ◽  
Atomically Flat

AbstractVarious methods have been used to initiate growth by Molecular Beam Epitaxy (MBE) of GaN on sapphire, or other substrates, but there is always a problem with morphology and with a high defect density which results in the formation of a sub-grain boundary structure. We show that by using, homo-epitaxial growth on properly prepared bulk GaN substrates, combined with high temperature growth, we obtain a significant improvement in surface morphology. Growth at sufficiently high temperature leads to a rapid smoothing of the surface and to almost atomically flat surfaces over relatively large areas. Multi-Quantum Well structures grown on such GaN epitaxial films are dislocation free with abrupt interfaces.

Piezoelectric Coefficients of Aluminum Nitride and Gallium Nitride

1999 ◽  
Vol 572 ◽  
Author(s):  
C. M. Lueng ◽  
H. L. W. Chan ◽  
W. K. Fong ◽  
C. Surya ◽  
C. L. Choy
Keyword(s):  
Thin Films ◽  
Gallium Nitride ◽  
High Temperature ◽  
Molecular Beam Epitaxy ◽  
Aluminum Nitride ◽  
Composite Film ◽  
High Frequency ◽  
Molecular Beam ◽  
Silicon Substrates ◽  
Heterodyne Interferometer

ABSTRACTAluminum nitride (AlN) and gallium nitride (GaN) thin films have potential uses in high temperature, high frequency (e.g. microwave) acoustic devices. In this work, the piezoelectric coefficients of wurtzite AlN and GaN/AlN composite film grown on silicon substrates by molecular beam epitaxy were measured by a Mach-Zehnder type heterodyne interferometer. The effects of the substrate on the measured coefficients are discussed.

High-temperature Plasma-assisted Molecular Beam Epitaxy of hBN Layers

2019 ◽  
Author(s):  
T. S. Cheng ◽  
A. Summerfield ◽  
C. J. Mellor ◽  
G. Cassabois ◽  
B. Gil ◽  
...  
Keyword(s):  
High Temperature ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Temperature Plasma ◽  
High Temperature Plasma
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